MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Hiroshi KAMBAYASHI

Patent

Atlas literature

Patent

US 8,999,788

MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Hiroshi KAMBAYASHI

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

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FIG. 8

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FIG. 11

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FIG. 13

FIG. 14

FIG. 15

FIG. 16

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

8 independent · 9 dependent

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Independent
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Independent
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1. 11
  Dependent← claim 6gallium-nitride-based semiconductor (first semiconductor layer)second sacrificial layer
  (cu rr ently amended): [[The]] A method of manufacturing a gallium-nitride- based semiconductor device, acording to Claim 6, fur comprising: forming a ﬁrst semiconductor layer of a gallium-nitride-based semiconductor; forming a recessed portion by dry etching a portion of the ﬁrst semiconductor lay er by a microwave plasma process using a bromine-based gas; and forming a second semiconductor layer below the ﬁrst semiconductor layer, wherein the recessed portion passes through the ﬁrst semiconductor layer in a depth direction and partially exposes the second semiconductor layer, the method further comprising: forming a second sacriﬁcial layer that contacts the exposed surface of the second semiconductor layer in the recessed portion and that has a higher solid solubility for impurities included in the second semiconductor layer than the second semiconductor layer; annealing the second sacriﬁcial layer and the second semiconductor layer; and removing the second sacriﬁcial layer through a wet process.
7
Independentmicrowave plasma apparatus
(cu rr ently amended): The method of manufacturing a gallium-nitride-based semiconductor device according to Claim [[6]] 8, wherein the microwave plasma process is performed by a microwave plasma apparatus that includes a processing chamber in which a process using plasma is performed, a dielectric that introduces microwaves, and a showerhead that introduces an etching gas between the dielectric and the ﬁrst semiconductor layer.
8
Independentgallium-nitride-based semiconductor (first semiconductor layer)first sacrificial layer
(cu rr ently amended): [[The]] A method of manufacturing a gallium-nitride-based semiconductor devic e, acci comprising: forming a ﬁrst semiconductor layer of a gallium-nitride-based semiconductor; forming a recessed portion by dry etching a portion of the ﬁrst semiconductor lay er by a microwave plasma process using a bromine-based gas; forming a ﬁrst sacriﬁcial layer that contacts the ﬁrst semiconductor layer and has a higher solid solubility for impurities included in the ﬁrst semiconductor layer than the ﬁrst semiconductor layer; annealing the ﬁrst sacriﬁcial layer and the ﬁrst semiconductor layer; and removing the ﬁrst sacriﬁcial layer through a wet process, wherein forming the recessed portion includes etching, via the microwave plasma process, a region from which the ﬁrst sacriﬁcial layer has been removed. 2 App l. No.: 13/950,079 Attorney Docket No. 5195-024 Reply to Oﬃce Action of
1. 9
  Dependent← claim 8first sacrificial layer
  The method of manufacturing a gallium-nitride-based semiconductor device according to Claim 8, wherein the ﬁrst sacriﬁcial layer is formed at a temperature no greater than 500 0C.
2. 10
  Dependent← claim 8first sacrificial layerSiOxAlOxSiNxGaOxHfOx
  The method of manufacturing a gallium-nitride-based semiconductor device according to Claim 8, wherein the ﬁrst sacriﬁcial layer is formed by one or more of SiOx (0 < X < 2), A l Ox (0 < X < 1.5), SiNx (0 < X < 4/3), GaOx (0 < X 5 1.5), HfOx (0 < X 5 2), GdOx (0 < X 1.5), MgOx (0 < X 5 1), ScOx (0 < X 5 1.5), ZrOx (0 < X 5 2), TaOx (0 < X 5 2.5), TiOx (0 X 5 2), NiOx (0 S X 5 1.5), and V.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

microwave plasma apparatus

No layer stack recorded.

GaN-based MOS field effect transistor

SiO₂gate insulator

AlyGa₁-yNelectron supply layer

GaNdrift layer

GaNchannel layer

GaN/AlN buffer layer stackbuffer layer

Materials

Materials described outside the worked examples.

gallium-nitride-based semiconductor (first semiconductor layer)

Semiconductor Layer

first sacrificial layer

Sacrificial Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Temperature

1050°C

Ambient

hydrogen gas (carrier gas)

Process details

layers:buffer layer (GaN/AlN alternating), channel layer (p-type GaN, 500 nm, ~1e10 cm⁻³ Mg), drift layer (u-GaN, 20 nm), electron supply layer (AlyGa₁-yN, Y=0.25, 20 nm)

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≥ 15 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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