Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations3 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD OF MANUFACTURING VERTICAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
LIGHT EMITTING DIODE CHIP WITH PROTECTIVE LAYER OF METAL CATALYST AND FLUORINATED GRAPHENE AND PREPARATION METHOD THEREOF
MANUFACTURING METHOD OF GAN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations3 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD OF MANUFACTURING VERTICAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
LIGHT EMITTING DIODE CHIP WITH PROTECTIVE LAYER OF METAL CATALYST AND FLUORINATED GRAPHENE AND PREPARATION METHOD THEREOF
MANUFACTURING METHOD OF GAN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations3 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD OF MANUFACTURING VERTICAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
LIGHT EMITTING DIODE CHIP WITH PROTECTIVE LAYER OF METAL CATALYST AND FLUORINATED GRAPHENE AND PREPARATION METHOD THEREOF
MANUFACTURING METHOD OF GAN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
5 preparations2 characterizations3 properties1 figure
Related documents with shared materials, methods, properties, or citations.
Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths
Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold
Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Mitigation of Delamination of Epitaxial Large-Area Boron Nitride for Semiconductor Processing
METHOD OF MANUFACTURING VERTICAL GALLIUM NITRIDE BASED LIGHT EMITTING DIODE
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
LIGHT EMITTING DIODE CHIP WITH PROTECTIVE LAYER OF METAL CATALYST AND FLUORINATED GRAPHENE AND PREPARATION METHOD THEREOF
MANUFACTURING METHOD OF GAN-BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
