Patent
US 10,723,620DIRECT GRAPHENE GROWING METHOD
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,723,620Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an embodiment of graphene directly grown on an inorganic substrate; [0028]
FIG. 2 is a schematic diagram illustrating an embodiment of a method of directly growing graphene according to the present disclosure; and [0029]
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
FIG. 4. Referring to
FIG. 5. Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing crystalline graphene, the method comprising: performing a first thermal treatment in a reducing atmosphere including supplying heat to an inorganic substrate without a separate graphitization catalyst layer thereon in a reactor prior to introducing a vapor carbon supply source into the reactor; introducing the vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; binding the activated carbon on the inorganic substrate to grow a first crystalline graphene having a first crystallinity; forming a graphitization catalyst layer on the first crystalline graphene grown on the inorganic substrate; performing a second thermal treatment on the inorganic substrate with the first crystalline graphene and graphitization catalyst layer thereon without introducing the vapor carbon supply source into the reactor such that the first crystallinity of the first crystalline graphene is increased to form a second crystalline graphene having a second crystallinity, and removing the graphitization catalyst layer to obtain a graphene-on-substrate including the inorganic substrate and the second crystalline graphene grown directly on the inorganic substrate; wherein the inorganic substrate includes any one of a metal oxide based substrate, a silica based substrate, and a silicon based substrate, or a stack of at least two thereof; wherein the metal oxide includes at least one of, T iO 2, ZnO, MgO, N iG, Co20, Cu O and Fe O, wherein the first thermal treatment is performed at a temperature from about 300 0 C to a melting point of the inorganic substrate, wherein the reducing atmosphere comprises hydrogen gas, ammonia gas, or a mixture of hydrogen gas and ammonia gas, and wherein the second crystallinity of the second crystalline graphene is higher than the first crystallinity of the first crystalline graphene. Currently amended
The method of claim 1, wherein the inorganic substrate has at least one of a monocrystalline structure, a polycrystalline structure and an amorphous structure. Original
The method of claim 1, wherein the inorganic substrate has a thickness in a range of about nanometers to about 100 micrometers. Original
The method of claim 1, wherein the inorganic substrate comprises: a base including at least one of a silicon-based crystalline and a sapphire crystalline; and a thin film disposed on the based, wherein the thin film has a thickness in a range from about 10 nanometers to about 1,000 nanometers. Original
The method of claim 1, wherein the first thermal treatment is performed at a temperature of from about 300 0 C to about 2,000C for about 0.001 hours to about 1,000 hours. Original
The method of claim 1, further comprising: performing a cooling process at a rate of about I 0 0 C to about 1 00 0 C per minute after the first thermal treatment. Original
The method of claim 1, wherein the vapor carbon supply source comprises at least one selected from the group consisting of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene and toluene. Original
The method of claim 1, wherein the graphitization catalyst comprises at least one selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V) and zirconium (Zr). Previously presented
The method of claim 1, wherein the graphitization catalyst layer has a thickness in a range from about 100 nanometers to about 1,000 nanometers. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) in a range from about 0.2 to about 0.001. Previously presented
The method of claim 1, wherein the reducing atmosphere further comprises nitrogen gas, argon gas, or a mixture of nitrogen and argon gas. Previously presented
Canceled
Canceled
Canceled
Canceled
Canceled
Crystalline graphene obtained by a method comprising: performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor; introducing a vapor carbon supply source into th e reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
A graphene-on-substrate comprising: an inorganic substrate; and crystalline graphene disposed on at least one surface of the inorganic substrate, wherein the crystalline graphene is directly grown on the inorganic substrate by a growing process. Withdrawn
The graphene-on-substrate of claim 18, wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
An electronic device comprising the graphene-on-substrate of claim 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate
Materials described outside the worked examples.
crystalline graphene
inorganic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D-band to G-band peak intensity ratio (ID/IG) of second crystalline graphene | ≤ 0.5 dimensionless | crystalline graphene |
D-band to G-band peak intensity ratio (ID/IG) range of second crystalline graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,723,620Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an embodiment of graphene directly grown on an inorganic substrate; [0028]
FIG. 2 is a schematic diagram illustrating an embodiment of a method of directly growing graphene according to the present disclosure; and [0029]
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
FIG. 4. Referring to
FIG. 5. Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing crystalline graphene, the method comprising: performing a first thermal treatment in a reducing atmosphere including supplying heat to an inorganic substrate without a separate graphitization catalyst layer thereon in a reactor prior to introducing a vapor carbon supply source into the reactor; introducing the vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; binding the activated carbon on the inorganic substrate to grow a first crystalline graphene having a first crystallinity; forming a graphitization catalyst layer on the first crystalline graphene grown on the inorganic substrate; performing a second thermal treatment on the inorganic substrate with the first crystalline graphene and graphitization catalyst layer thereon without introducing the vapor carbon supply source into the reactor such that the first crystallinity of the first crystalline graphene is increased to form a second crystalline graphene having a second crystallinity, and removing the graphitization catalyst layer to obtain a graphene-on-substrate including the inorganic substrate and the second crystalline graphene grown directly on the inorganic substrate; wherein the inorganic substrate includes any one of a metal oxide based substrate, a silica based substrate, and a silicon based substrate, or a stack of at least two thereof; wherein the metal oxide includes at least one of, T iO 2, ZnO, MgO, N iG, Co20, Cu O and Fe O, wherein the first thermal treatment is performed at a temperature from about 300 0 C to a melting point of the inorganic substrate, wherein the reducing atmosphere comprises hydrogen gas, ammonia gas, or a mixture of hydrogen gas and ammonia gas, and wherein the second crystallinity of the second crystalline graphene is higher than the first crystallinity of the first crystalline graphene. Currently amended
The method of claim 1, wherein the inorganic substrate has at least one of a monocrystalline structure, a polycrystalline structure and an amorphous structure. Original
The method of claim 1, wherein the inorganic substrate has a thickness in a range of about nanometers to about 100 micrometers. Original
The method of claim 1, wherein the inorganic substrate comprises: a base including at least one of a silicon-based crystalline and a sapphire crystalline; and a thin film disposed on the based, wherein the thin film has a thickness in a range from about 10 nanometers to about 1,000 nanometers. Original
The method of claim 1, wherein the first thermal treatment is performed at a temperature of from about 300 0 C to about 2,000C for about 0.001 hours to about 1,000 hours. Original
The method of claim 1, further comprising: performing a cooling process at a rate of about I 0 0 C to about 1 00 0 C per minute after the first thermal treatment. Original
The method of claim 1, wherein the vapor carbon supply source comprises at least one selected from the group consisting of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene and toluene. Original
The method of claim 1, wherein the graphitization catalyst comprises at least one selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V) and zirconium (Zr). Previously presented
The method of claim 1, wherein the graphitization catalyst layer has a thickness in a range from about 100 nanometers to about 1,000 nanometers. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) in a range from about 0.2 to about 0.001. Previously presented
The method of claim 1, wherein the reducing atmosphere further comprises nitrogen gas, argon gas, or a mixture of nitrogen and argon gas. Previously presented
Canceled
Canceled
Canceled
Canceled
Canceled
Crystalline graphene obtained by a method comprising: performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor; introducing a vapor carbon supply source into th e reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
A graphene-on-substrate comprising: an inorganic substrate; and crystalline graphene disposed on at least one surface of the inorganic substrate, wherein the crystalline graphene is directly grown on the inorganic substrate by a growing process. Withdrawn
The graphene-on-substrate of claim 18, wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
An electronic device comprising the graphene-on-substrate of claim 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate
Materials described outside the worked examples.
crystalline graphene
inorganic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D-band to G-band peak intensity ratio (ID/IG) of second crystalline graphene | ≤ 0.5 dimensionless | crystalline graphene |
D-band to G-band peak intensity ratio (ID/IG) range of second crystalline graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,723,620Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an embodiment of graphene directly grown on an inorganic substrate; [0028]
FIG. 2 is a schematic diagram illustrating an embodiment of a method of directly growing graphene according to the present disclosure; and [0029]
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
FIG. 4. Referring to
FIG. 5. Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing crystalline graphene, the method comprising: performing a first thermal treatment in a reducing atmosphere including supplying heat to an inorganic substrate without a separate graphitization catalyst layer thereon in a reactor prior to introducing a vapor carbon supply source into the reactor; introducing the vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; binding the activated carbon on the inorganic substrate to grow a first crystalline graphene having a first crystallinity; forming a graphitization catalyst layer on the first crystalline graphene grown on the inorganic substrate; performing a second thermal treatment on the inorganic substrate with the first crystalline graphene and graphitization catalyst layer thereon without introducing the vapor carbon supply source into the reactor such that the first crystallinity of the first crystalline graphene is increased to form a second crystalline graphene having a second crystallinity, and removing the graphitization catalyst layer to obtain a graphene-on-substrate including the inorganic substrate and the second crystalline graphene grown directly on the inorganic substrate; wherein the inorganic substrate includes any one of a metal oxide based substrate, a silica based substrate, and a silicon based substrate, or a stack of at least two thereof; wherein the metal oxide includes at least one of, T iO 2, ZnO, MgO, N iG, Co20, Cu O and Fe O, wherein the first thermal treatment is performed at a temperature from about 300 0 C to a melting point of the inorganic substrate, wherein the reducing atmosphere comprises hydrogen gas, ammonia gas, or a mixture of hydrogen gas and ammonia gas, and wherein the second crystallinity of the second crystalline graphene is higher than the first crystallinity of the first crystalline graphene. Currently amended
The method of claim 1, wherein the inorganic substrate has at least one of a monocrystalline structure, a polycrystalline structure and an amorphous structure. Original
The method of claim 1, wherein the inorganic substrate has a thickness in a range of about nanometers to about 100 micrometers. Original
The method of claim 1, wherein the inorganic substrate comprises: a base including at least one of a silicon-based crystalline and a sapphire crystalline; and a thin film disposed on the based, wherein the thin film has a thickness in a range from about 10 nanometers to about 1,000 nanometers. Original
The method of claim 1, wherein the first thermal treatment is performed at a temperature of from about 300 0 C to about 2,000C for about 0.001 hours to about 1,000 hours. Original
The method of claim 1, further comprising: performing a cooling process at a rate of about I 0 0 C to about 1 00 0 C per minute after the first thermal treatment. Original
The method of claim 1, wherein the vapor carbon supply source comprises at least one selected from the group consisting of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene and toluene. Original
The method of claim 1, wherein the graphitization catalyst comprises at least one selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V) and zirconium (Zr). Previously presented
The method of claim 1, wherein the graphitization catalyst layer has a thickness in a range from about 100 nanometers to about 1,000 nanometers. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) in a range from about 0.2 to about 0.001. Previously presented
The method of claim 1, wherein the reducing atmosphere further comprises nitrogen gas, argon gas, or a mixture of nitrogen and argon gas. Previously presented
Canceled
Canceled
Canceled
Canceled
Canceled
Crystalline graphene obtained by a method comprising: performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor; introducing a vapor carbon supply source into th e reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
A graphene-on-substrate comprising: an inorganic substrate; and crystalline graphene disposed on at least one surface of the inorganic substrate, wherein the crystalline graphene is directly grown on the inorganic substrate by a growing process. Withdrawn
The graphene-on-substrate of claim 18, wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
An electronic device comprising the graphene-on-substrate of claim 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate
Materials described outside the worked examples.
crystalline graphene
inorganic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D-band to G-band peak intensity ratio (ID/IG) of second crystalline graphene | ≤ 0.5 dimensionless | crystalline graphene |
D-band to G-band peak intensity ratio (ID/IG) range of second crystalline graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,723,620Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an embodiment of graphene directly grown on an inorganic substrate; [0028]
FIG. 2 is a schematic diagram illustrating an embodiment of a method of directly growing graphene according to the present disclosure; and [0029]
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
FIG. 4. Referring to
FIG. 5. Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing crystalline graphene, the method comprising: performing a first thermal treatment in a reducing atmosphere including supplying heat to an inorganic substrate without a separate graphitization catalyst layer thereon in a reactor prior to introducing a vapor carbon supply source into the reactor; introducing the vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon; binding the activated carbon on the inorganic substrate to grow a first crystalline graphene having a first crystallinity; forming a graphitization catalyst layer on the first crystalline graphene grown on the inorganic substrate; performing a second thermal treatment on the inorganic substrate with the first crystalline graphene and graphitization catalyst layer thereon without introducing the vapor carbon supply source into the reactor such that the first crystallinity of the first crystalline graphene is increased to form a second crystalline graphene having a second crystallinity, and removing the graphitization catalyst layer to obtain a graphene-on-substrate including the inorganic substrate and the second crystalline graphene grown directly on the inorganic substrate; wherein the inorganic substrate includes any one of a metal oxide based substrate, a silica based substrate, and a silicon based substrate, or a stack of at least two thereof; wherein the metal oxide includes at least one of, T iO 2, ZnO, MgO, N iG, Co20, Cu O and Fe O, wherein the first thermal treatment is performed at a temperature from about 300 0 C to a melting point of the inorganic substrate, wherein the reducing atmosphere comprises hydrogen gas, ammonia gas, or a mixture of hydrogen gas and ammonia gas, and wherein the second crystallinity of the second crystalline graphene is higher than the first crystallinity of the first crystalline graphene. Currently amended
The method of claim 1, wherein the inorganic substrate has at least one of a monocrystalline structure, a polycrystalline structure and an amorphous structure. Original
The method of claim 1, wherein the inorganic substrate has a thickness in a range of about nanometers to about 100 micrometers. Original
The method of claim 1, wherein the inorganic substrate comprises: a base including at least one of a silicon-based crystalline and a sapphire crystalline; and a thin film disposed on the based, wherein the thin film has a thickness in a range from about 10 nanometers to about 1,000 nanometers. Original
The method of claim 1, wherein the first thermal treatment is performed at a temperature of from about 300 0 C to about 2,000C for about 0.001 hours to about 1,000 hours. Original
The method of claim 1, further comprising: performing a cooling process at a rate of about I 0 0 C to about 1 00 0 C per minute after the first thermal treatment. Original
The method of claim 1, wherein the vapor carbon supply source comprises at least one selected from the group consisting of carbon monoxide, methane, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene and toluene. Original
The method of claim 1, wherein the graphitization catalyst comprises at least one selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V) and zirconium (Zr). Previously presented
The method of claim 1, wherein the graphitization catalyst layer has a thickness in a range from about 100 nanometers to about 1,000 nanometers. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Previously presented
The method of claim 1, wherein the second crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) in a range from about 0.2 to about 0.001. Previously presented
The method of claim 1, wherein the reducing atmosphere further comprises nitrogen gas, argon gas, or a mixture of nitrogen and argon gas. Previously presented
Canceled
Canceled
Canceled
Canceled
Canceled
Crystalline graphene obtained by a method comprising: performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor; introducing a vapor carbon supply source into th e reactor during the first thermal treatment to form activated carbon; and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
A graphene-on-substrate comprising: an inorganic substrate; and crystalline graphene disposed on at least one surface of the inorganic substrate, wherein the crystalline graphene is directly grown on the inorganic substrate by a growing process. Withdrawn
The graphene-on-substrate of claim 18, wherein the crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of about 0.5 or less. Withdrawn
An electronic device comprising the graphene-on-substrate of claim 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-substrate
Materials described outside the worked examples.
crystalline graphene
inorganic substrate
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3 to 5 are graphs illustrating intensity (arbitrary unit) versus Raman shift inverse centimeters (cm -1), showing Raman spectra of an embodiment of a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D-band to G-band peak intensity ratio (ID/IG) of second crystalline graphene | ≤ 0.5 dimensionless | crystalline graphene |
D-band to G-band peak intensity ratio (ID/IG) range of second crystalline graphene |
Related documents with shared materials, methods, properties, or citations.
metal oxide based substrate
silica based substrate
silicon based substrate
vapor carbon supply source
graphitization catalyst
hydrogen gas
H₂
ammonia gas
NH₃
crystalline graphene |
Thickness | 10–1000 nm | — |
Temperature | 300–2000 °C | — |
Duration | 0.001–1000 hours | — |
Duration | 10–3600 s | — |
Temperature | 10–100 °C | — |
Thickness | 100–1000 nm | — |
Temperature | 800–1000 °C | — |
Duration | 0.001–100 hours | — |
Duration | 60–43200 s | — |
Thickness | 10–1000 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100000 nm | — |
METHOD FOR PRODUCING GRAPHENE
metal oxide based substrate
silica based substrate
silicon based substrate
vapor carbon supply source
graphitization catalyst
hydrogen gas
H₂
ammonia gas
NH₃
crystalline graphene |
Thickness | 10–1000 nm | — |
Temperature | 300–2000 °C | — |
Duration | 0.001–1000 hours | — |
Duration | 10–3600 s | — |
Temperature | 10–100 °C | — |
Thickness | 100–1000 nm | — |
Temperature | 800–1000 °C | — |
Duration | 0.001–100 hours | — |
Duration | 60–43200 s | — |
Thickness | 10–1000 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100000 nm | — |
METHOD FOR PRODUCING GRAPHENE
metal oxide based substrate
silica based substrate
silicon based substrate
vapor carbon supply source
graphitization catalyst
hydrogen gas
H₂
ammonia gas
NH₃
crystalline graphene |
Thickness | 10–1000 nm | — |
Temperature | 300–2000 °C | — |
Duration | 0.001–1000 hours | — |
Duration | 10–3600 s | — |
Temperature | 10–100 °C | — |
Thickness | 100–1000 nm | — |
Temperature | 800–1000 °C | — |
Duration | 0.001–100 hours | — |
Duration | 60–43200 s | — |
Thickness | 10–1000 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100000 nm | — |
METHOD FOR PRODUCING GRAPHENE
metal oxide based substrate
silica based substrate
silicon based substrate
vapor carbon supply source
graphitization catalyst
hydrogen gas
H₂
ammonia gas
NH₃
crystalline graphene |
Thickness | 10–1000 nm | — |
Temperature | 300–2000 °C | — |
Duration | 0.001–1000 hours | — |
Duration | 10–3600 s | — |
Temperature | 10–100 °C | — |
Thickness | 100–1000 nm | — |
Temperature | 800–1000 °C | — |
Duration | 0.001–100 hours | — |
Duration | 60–43200 s | — |
Thickness | 10–1000 mm | — |
Thickness | ≥ 1 mm | — |
Thickness | 10–100000 nm | — |
METHOD FOR PRODUCING GRAPHENE