Patent
US 10,354,935GRAPHENE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Myungmo SUNG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,354,935Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 illustrates a measured resistance of a graphene structure according to example embodiments of the inventive concepts. DETAILED DESCRIPTION OF THE …
FIG. 2B is a view illustrating another embodiment of cross-sectional 20 views taken along lines X-X' of
FIG. 3 is a mimetic view illustrating a 20 graphene st r ucture and a method for manufacturing the same, according to example embodiments of the inventive …
FIG. 4 is a flow chart illustrating a method for manufacturing a graphene structure, acc o rding to example embodiments of the inventive concepts. [00 81] …
FIGS. 5A and 5 B are views illustrating a modified example of a meth od for manufacturing a graphene structure according to example embodiments of the 20 …
FIGS. 6A and 6B are views illustrating an o ther modified example of a method for manufacturing a graphene structure according to example embodiments of the …
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 14 illustrates a measured resistance of a graphene layer according 25 to a comparative example. [004 8]
FIG. 15 illustrates a measured resistance of a graphene 15 structure according to example embodiments of the inventive c o ncepts. [00114] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material selectively provided at the defect of the base graphene layer, wherein the linking material is combined with carbon of the base graphene layer adjacent to the defect, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the linking material is provided on the sp3 hybridization type defect. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, and wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the base graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er. Currently amended
: The graphene structure of claim 1, wherein the defect of the base graphene layer further comprises at least one of a grain boundary, a point defect; and a line defect, a. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer is in a poly-crystalline state. Original
: The graphene structure of claim 1, wherein carbon of the base graphene layer adjacent to the defect has a dangling bond, and wherein the linking material passivates the dangling bond. Original
: The graphene structure of claim 1, wherein the graphene structure comprises: a first portion formed of the base graphene layer and having a first thickness; and a second portion formed of the linking material and having a second thickness greater than the first thickness. Original
: The graphene structure of claim 1, wherein carbons of the base graphene layer adjacent to the defect are connected to each other by the linking material. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher mobility, a higher thermal conductivity, and a lower vapor transmission rate than a poly- crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher hardness than a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein hole and electron mobilities of the graphene structure are more homogeneous than hole and electron mobilities of a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the base graphene layer includes a plurality of the defects, wherein a plurality of the linking materials are provided at the plurality of defects, and wherein the plurality of linking materials are formed of the same material. Original
: The method of claim 1 3, wherein the linking material has a hexagonal structure or the linking material is selected from the g roup consisting of ZnO, Al-ZnO, A 120 3, TiO 2, a 1 2 0 3 -TiO 2 nanolaminate, a ZnO-T i O 2 nanolaminate, NiS, TiS, Sb₂ S3, Zn-HQ, Zn-4 MP, Zn-BDT, Al-HQ, Al-4MP, Al-BDT, Ti-HQ, Ti-4MP and Ti-BDT. Previously presented
. Canceled
: A method for manufacturing a graphene structure, the method comprising: preparing a base substrate; forming a two-dimensional (2D) base graphene layer having a defect on the base substrate; and providing a linking material to the defect of the base graphene layer by providing a source onto the base graphene layer, the providing the linking material is performed by an atomic layer deposition method at a temperature of 180 0 C or less, and wherein a sheet resistance and a mobility of the graphene structure are adjusted according to a process temperature of the atomic layer deposition method. Previously presented
: The method of claim 13, wherein the providing of the source onto the base graphene layer is performed a plurality of times, and wherein a resistance of the graphene structure is adjusted according to the number of times of the providing of the source onto the base graphene layer. Original
: The method of claim 13, wherein the linking material is selectively provided to the defect of the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer onto another substrate before the providing of the source onto the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer and the linking material onto another substrate after the providing of the linking material to the defect of the base graphene layer. Original
. Canceled
. Canceled
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material provided at the defect of the base graphene layer, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the bas graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
Materials described outside the worked examples.
base graphene layer
linking material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | base graphene layer |
Fet Mobility | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,354,935Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 illustrates a measured resistance of a graphene structure according to example embodiments of the inventive concepts. DETAILED DESCRIPTION OF THE …
FIG. 2B is a view illustrating another embodiment of cross-sectional 20 views taken along lines X-X' of
FIG. 3 is a mimetic view illustrating a 20 graphene st r ucture and a method for manufacturing the same, according to example embodiments of the inventive …
FIG. 4 is a flow chart illustrating a method for manufacturing a graphene structure, acc o rding to example embodiments of the inventive concepts. [00 81] …
FIGS. 5A and 5 B are views illustrating a modified example of a meth od for manufacturing a graphene structure according to example embodiments of the 20 …
FIGS. 6A and 6B are views illustrating an o ther modified example of a method for manufacturing a graphene structure according to example embodiments of the …
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 14 illustrates a measured resistance of a graphene layer according 25 to a comparative example. [004 8]
FIG. 15 illustrates a measured resistance of a graphene 15 structure according to example embodiments of the inventive c o ncepts. [00114] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material selectively provided at the defect of the base graphene layer, wherein the linking material is combined with carbon of the base graphene layer adjacent to the defect, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the linking material is provided on the sp3 hybridization type defect. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, and wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the base graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er. Currently amended
: The graphene structure of claim 1, wherein the defect of the base graphene layer further comprises at least one of a grain boundary, a point defect; and a line defect, a. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer is in a poly-crystalline state. Original
: The graphene structure of claim 1, wherein carbon of the base graphene layer adjacent to the defect has a dangling bond, and wherein the linking material passivates the dangling bond. Original
: The graphene structure of claim 1, wherein the graphene structure comprises: a first portion formed of the base graphene layer and having a first thickness; and a second portion formed of the linking material and having a second thickness greater than the first thickness. Original
: The graphene structure of claim 1, wherein carbons of the base graphene layer adjacent to the defect are connected to each other by the linking material. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher mobility, a higher thermal conductivity, and a lower vapor transmission rate than a poly- crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher hardness than a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein hole and electron mobilities of the graphene structure are more homogeneous than hole and electron mobilities of a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the base graphene layer includes a plurality of the defects, wherein a plurality of the linking materials are provided at the plurality of defects, and wherein the plurality of linking materials are formed of the same material. Original
: The method of claim 1 3, wherein the linking material has a hexagonal structure or the linking material is selected from the g roup consisting of ZnO, Al-ZnO, A 120 3, TiO 2, a 1 2 0 3 -TiO 2 nanolaminate, a ZnO-T i O 2 nanolaminate, NiS, TiS, Sb₂ S3, Zn-HQ, Zn-4 MP, Zn-BDT, Al-HQ, Al-4MP, Al-BDT, Ti-HQ, Ti-4MP and Ti-BDT. Previously presented
. Canceled
: A method for manufacturing a graphene structure, the method comprising: preparing a base substrate; forming a two-dimensional (2D) base graphene layer having a defect on the base substrate; and providing a linking material to the defect of the base graphene layer by providing a source onto the base graphene layer, the providing the linking material is performed by an atomic layer deposition method at a temperature of 180 0 C or less, and wherein a sheet resistance and a mobility of the graphene structure are adjusted according to a process temperature of the atomic layer deposition method. Previously presented
: The method of claim 13, wherein the providing of the source onto the base graphene layer is performed a plurality of times, and wherein a resistance of the graphene structure is adjusted according to the number of times of the providing of the source onto the base graphene layer. Original
: The method of claim 13, wherein the linking material is selectively provided to the defect of the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer onto another substrate before the providing of the source onto the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer and the linking material onto another substrate after the providing of the linking material to the defect of the base graphene layer. Original
. Canceled
. Canceled
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material provided at the defect of the base graphene layer, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the bas graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
Materials described outside the worked examples.
base graphene layer
linking material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | base graphene layer |
Fet Mobility | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,354,935Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 illustrates a measured resistance of a graphene structure according to example embodiments of the inventive concepts. DETAILED DESCRIPTION OF THE …
FIG. 2B is a view illustrating another embodiment of cross-sectional 20 views taken along lines X-X' of
FIG. 3 is a mimetic view illustrating a 20 graphene st r ucture and a method for manufacturing the same, according to example embodiments of the inventive …
FIG. 4 is a flow chart illustrating a method for manufacturing a graphene structure, acc o rding to example embodiments of the inventive concepts. [00 81] …
FIGS. 5A and 5 B are views illustrating a modified example of a meth od for manufacturing a graphene structure according to example embodiments of the 20 …
FIGS. 6A and 6B are views illustrating an o ther modified example of a method for manufacturing a graphene structure according to example embodiments of the …
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 14 illustrates a measured resistance of a graphene layer according 25 to a comparative example. [004 8]
FIG. 15 illustrates a measured resistance of a graphene 15 structure according to example embodiments of the inventive c o ncepts. [00114] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material selectively provided at the defect of the base graphene layer, wherein the linking material is combined with carbon of the base graphene layer adjacent to the defect, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the linking material is provided on the sp3 hybridization type defect. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, and wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the base graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er. Currently amended
: The graphene structure of claim 1, wherein the defect of the base graphene layer further comprises at least one of a grain boundary, a point defect; and a line defect, a. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer is in a poly-crystalline state. Original
: The graphene structure of claim 1, wherein carbon of the base graphene layer adjacent to the defect has a dangling bond, and wherein the linking material passivates the dangling bond. Original
: The graphene structure of claim 1, wherein the graphene structure comprises: a first portion formed of the base graphene layer and having a first thickness; and a second portion formed of the linking material and having a second thickness greater than the first thickness. Original
: The graphene structure of claim 1, wherein carbons of the base graphene layer adjacent to the defect are connected to each other by the linking material. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher mobility, a higher thermal conductivity, and a lower vapor transmission rate than a poly- crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher hardness than a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein hole and electron mobilities of the graphene structure are more homogeneous than hole and electron mobilities of a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the base graphene layer includes a plurality of the defects, wherein a plurality of the linking materials are provided at the plurality of defects, and wherein the plurality of linking materials are formed of the same material. Original
: The method of claim 1 3, wherein the linking material has a hexagonal structure or the linking material is selected from the g roup consisting of ZnO, Al-ZnO, A 120 3, TiO 2, a 1 2 0 3 -TiO 2 nanolaminate, a ZnO-T i O 2 nanolaminate, NiS, TiS, Sb₂ S3, Zn-HQ, Zn-4 MP, Zn-BDT, Al-HQ, Al-4MP, Al-BDT, Ti-HQ, Ti-4MP and Ti-BDT. Previously presented
. Canceled
: A method for manufacturing a graphene structure, the method comprising: preparing a base substrate; forming a two-dimensional (2D) base graphene layer having a defect on the base substrate; and providing a linking material to the defect of the base graphene layer by providing a source onto the base graphene layer, the providing the linking material is performed by an atomic layer deposition method at a temperature of 180 0 C or less, and wherein a sheet resistance and a mobility of the graphene structure are adjusted according to a process temperature of the atomic layer deposition method. Previously presented
: The method of claim 13, wherein the providing of the source onto the base graphene layer is performed a plurality of times, and wherein a resistance of the graphene structure is adjusted according to the number of times of the providing of the source onto the base graphene layer. Original
: The method of claim 13, wherein the linking material is selectively provided to the defect of the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer onto another substrate before the providing of the source onto the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer and the linking material onto another substrate after the providing of the linking material to the defect of the base graphene layer. Original
. Canceled
. Canceled
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material provided at the defect of the base graphene layer, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the bas graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
Materials described outside the worked examples.
base graphene layer
linking material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | base graphene layer |
Fet Mobility | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,354,935Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 5 illustrates a measured resistance of a graphene structure according to example embodiments of the inventive concepts. DETAILED DESCRIPTION OF THE …
FIG. 2B is a view illustrating another embodiment of cross-sectional 20 views taken along lines X-X' of
FIG. 3 is a mimetic view illustrating a 20 graphene st r ucture and a method for manufacturing the same, according to example embodiments of the inventive …
FIG. 4 is a flow chart illustrating a method for manufacturing a graphene structure, acc o rding to example embodiments of the inventive concepts. [00 81] …
FIGS. 5A and 5 B are views illustrating a modified example of a meth od for manufacturing a graphene structure according to example embodiments of the 20 …
FIGS. 6A and 6B are views illustrating an o ther modified example of a method for manufacturing a graphene structure according to example embodiments of the …
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 14 illustrates a measured resistance of a graphene layer according 25 to a comparative example. [004 8]
FIG. 15 illustrates a measured resistance of a graphene 15 structure according to example embodiments of the inventive c o ncepts. [00114] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material selectively provided at the defect of the base graphene layer, wherein the linking material is combined with carbon of the base graphene layer adjacent to the defect, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the linking material is provided on the sp3 hybridization type defect. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, and wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the base graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er. Currently amended
: The graphene structure of claim 1, wherein the defect of the base graphene layer further comprises at least one of a grain boundary, a point defect; and a line defect, a. Currently amended
: The graphene structure of claim 1, wherein the base graphene layer is in a poly-crystalline state. Original
: The graphene structure of claim 1, wherein carbon of the base graphene layer adjacent to the defect has a dangling bond, and wherein the linking material passivates the dangling bond. Original
: The graphene structure of claim 1, wherein the graphene structure comprises: a first portion formed of the base graphene layer and having a first thickness; and a second portion formed of the linking material and having a second thickness greater than the first thickness. Original
: The graphene structure of claim 1, wherein carbons of the base graphene layer adjacent to the defect are connected to each other by the linking material. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher mobility, a higher thermal conductivity, and a lower vapor transmission rate than a poly- crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the graphene structure has a higher hardness than a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein hole and electron mobilities of the graphene structure are more homogeneous than hole and electron mobilities of a poly-crystalline two-dimensional (2 D) graphene layer. Original
: The graphene structure of claim 1, wherein the base graphene layer includes a plurality of the defects, wherein a plurality of the linking materials are provided at the plurality of defects, and wherein the plurality of linking materials are formed of the same material. Original
: The method of claim 1 3, wherein the linking material has a hexagonal structure or the linking material is selected from the g roup consisting of ZnO, Al-ZnO, A 120 3, TiO 2, a 1 2 0 3 -TiO 2 nanolaminate, a ZnO-T i O 2 nanolaminate, NiS, TiS, Sb₂ S3, Zn-HQ, Zn-4 MP, Zn-BDT, Al-HQ, Al-4MP, Al-BDT, Ti-HQ, Ti-4MP and Ti-BDT. Previously presented
. Canceled
: A method for manufacturing a graphene structure, the method comprising: preparing a base substrate; forming a two-dimensional (2D) base graphene layer having a defect on the base substrate; and providing a linking material to the defect of the base graphene layer by providing a source onto the base graphene layer, the providing the linking material is performed by an atomic layer deposition method at a temperature of 180 0 C or less, and wherein a sheet resistance and a mobility of the graphene structure are adjusted according to a process temperature of the atomic layer deposition method. Previously presented
: The method of claim 13, wherein the providing of the source onto the base graphene layer is performed a plurality of times, and wherein a resistance of the graphene structure is adjusted according to the number of times of the providing of the source onto the base graphene layer. Original
: The method of claim 13, wherein the linking material is selectively provided to the defect of the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer onto another substrate before the providing of the source onto the base graphene layer. Original
: The method of claim 13, further comprising: transferring the base graphene layer and the linking material onto another substrate after the providing of the linking material to the defect of the base graphene layer. Original
. Canceled
. Canceled
: A graphene structure comprising: a substrate; a base graphene layer having a defect on the substrate; and a linking material provided at the defect of the base graphene layer, wherein the base graphene layer comprises a first graphene grain having a first crystal orientation and a second graphene grain having a second crystal orientation, wherein the linking material is provided at the defect between the first graphene grain and the second graphene grain, wherein the linking material is combined with carbon of the first graphene grain adjacent to the defect and carbon of the second graphene grain adjacent to the defect so that the linking material connects the carbons of the first and second graphene grains and a sheet resistance of AM ENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₅₀₇ the bas graphene layer is decreased as compared to the sheet resistance of a graphene lay er without a linking material being selectively provided at the defect of the graphene la y er, wherein the defect of the base graphene comprises a sp3 hybridization type defect covering the substrate and protruding from the substrate, and the
Layer stacks claimed or described, ordered top of device to substrate.
graphene structure
Materials described outside the worked examples.
base graphene layer
linking material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | base graphene layer |
Fet Mobility | — |
Related documents with shared materials, methods, properties, or citations.
ZnO
Al-ZnO
Al₂O₃
TiO₂
Al₂O₃-TiO₂ nanolaminate
ZnO-TiO₂ nanolaminate
NiS
TiS
Sb₂S₃
Zn-HQ
Zn-4MP
Zn-BDT
Al-HQ
Al-4MP
Al-BDT
Ti-HQ
Ti-4MP
Ti-BDT
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
Thickness | 1–7000 cm | — |
ZnO
Al-ZnO
Al₂O₃
TiO₂
Al₂O₃-TiO₂ nanolaminate
ZnO-TiO₂ nanolaminate
NiS
TiS
Sb₂S₃
Zn-HQ
Zn-4MP
Zn-BDT
Al-HQ
Al-4MP
Al-BDT
Ti-HQ
Ti-4MP
Ti-BDT
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
Thickness | 1–7000 cm | — |
ZnO
Al-ZnO
Al₂O₃
TiO₂
Al₂O₃-TiO₂ nanolaminate
ZnO-TiO₂ nanolaminate
NiS
TiS
Sb₂S₃
Zn-HQ
Zn-4MP
Zn-BDT
Al-HQ
Al-4MP
Al-BDT
Ti-HQ
Ti-4MP
Ti-BDT
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
Thickness | 1–7000 cm | — |
ZnO
Al-ZnO
Al₂O₃
TiO₂
Al₂O₃-TiO₂ nanolaminate
ZnO-TiO₂ nanolaminate
NiS
TiS
Sb₂S₃
Zn-HQ
Zn-4MP
Zn-BDT
Al-HQ
Al-4MP
Al-BDT
Ti-HQ
Ti-4MP
Ti-BDT
FIG. 7, and ZnO corresponding to the linking material was formed by the ALD process using DEZ and H 2 0. A sheet resistance of the graphene structure according …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 8 is a graph illustrating a sheet resistance of a graphene structure against the number of atomic layer deposition (ALD) processes (or ALD cycles), 20 …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 9, it may be rec o gnized that a sheet resistance and a mobility of the graphene structure are adjusted according to the deposition temperature of the ALD …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 10, a transistor according to example embodiments of the inventive concepts was manufactured to have an active layer f o rmed of the 15 graphene structure …
FIG. 11 is a graph illustrating a transmittance of a graphene structure according to example embodiments of the inventive concepts. [00110] Referring to
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 12 is a graph illustrating a h o le mobility and an electron mobility of a graphene layer according to a comparative example. [0046]
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
FIG. 13 is a graph illustrating a hole mobility and an electron mobility of a graphene structure according to example embodiments of the inventive concepts. …
Thickness | 1–7000 cm | — |