Patent
US 11,287,536RADIATION DETECTOR USING A GRAPHENE AMPLIFIER LAYER
Stephen W. Howell
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,287,536Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIGS. 3A-3C illustrate the changes relative to the three preceding figures when the GOS junction is placed under photoexcitation. Under photoexcitation, the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 7. [0084] The plotted data were extracted from linear fits of the data of
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 13 is a notional perspective view of a stacked multimodal array in which each layer has a different spectral sensitivity. [0044]
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
FIG. 17 is a flowchart illustrating one example process that can be carried out using the system of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An imaging system, comprising: a plurality of junction devices arranged in an array; a controller; and a control bus and a readout bus connected between the junction devices and the controller; wherein: each junction device comprises a semiconductor absorber body, a dielectric film o f insulating oxide that overlies an interface region of the semiconductor absorber body, and a channel layer comprising graphene that overlies the dielectric film [[;]], whereby a graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device; each junction device further comprises a metallic source electrode and a metallic drain electrode contacting opposing ends of the channel layer, and further comprises a metallic back- gate electrode contacting a side of the semiconductor absorber body opposite to the interface region; within each junction device, the source and drain electrodes are connected to the channel layer so that when they are energized by an applied source-drain voltage, a source-drain current passes between them through the channel layer; the controller is configured to provide source-drain voltages for the junction devices; the controller is configured to provide, as back-gate voltages to be applied to the back- gate electrodes of the junction devices, voltage waveforms that rise in magnitude during a rising period of time at a rate sufficient to drive the interface regions of the respective junction devices into deep depletion; the control bus is connected so as to deliver the source-drain voltages and back-gate voltages from the controller to the junction devices; the controller is configured to receive readout signals, comprising signals indicating source-drain current, from the junction devices; the readout bus is connected so as to deliver the readout signals from the junction devices to the controller; and the controller is configured to sample the signal indicating source-drain current from each junction device during the rising periods of time of the back-gate voltage waveform applied to such device while its interface region is in deep depletion. Currently amended
The imaging system of claim 1, wherein the controller is configured to drive all GOS junctions of the array of junction devices into deep depletion simultaneously. Currently amended
The imaging system of claim 1, wherein the controller is configured to provide the source-drain voltages to individually selectable ones of the junction devices and to sample the readout signals indicating source-drain current from individually selectable ones of the junction devices. Original
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices is organized into periodically repeating clusters; each said cluster comprises two or more coplanar junction devices; and the respective junction devices within each said cluster have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices has two lateral dimensions and a depth dimension; in the depth dimension, junction devices are arranged one above the other to form vertically stacked groups of two or more junction devices; and the respective junction devices within each vertically stacked group have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: the imaging system includes ionization detectors; and within the array of junction devices, each of at least some junction devices or clusters of junction devices is vertically stacked with an ionization detector. Original
Canceled
A method for detecting radiant energy with at least a first junction device in which a dielectric film of insulating oxide overlies an interface region of a semiconductor absorber body and a channel layer comprising graphene overlies the dielectric film such that a graphene/oxide/semiconductor (GOS) junction is formed, comprising: applying a time-varying back-gate voltage between the channel layer and a back-gate electrode that contacts a side of the semiconductor absorber body opposed to the interface region, wherein the time-var y ing back-gate voltage has a voltage waveform that rises in magnitude during a rising period of time at a rate sufficient to drive the interface region into deep depletion; and at one or more sampling times within the rising period of time, while the interface region is in deep depletion, measuring a change in electrical resistance of the channel layer. Currently amended
The method of claim 9, wherein the change in electrical resistance of the channel layer is an indication of integrated charge in the interface region. Original
The method of claim 9, performed in an imaging array in which the first junction device is one of a plurality of replicated junction devices. Currently amended
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
deeply depleted graphene-oxide-semiconductor (D₂GOS) detector/GOS junction device
Materials described outside the worked examples.
graphene
insulating oxide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D2GOS detector responsivity (visible wavelengths, stated expectation) | 2500 A/W | graphene |
Voltage | 1–5 V |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
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US 11,287,536Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIGS. 3A-3C illustrate the changes relative to the three preceding figures when the GOS junction is placed under photoexcitation. Under photoexcitation, the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 7. [0084] The plotted data were extracted from linear fits of the data of
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 13 is a notional perspective view of a stacked multimodal array in which each layer has a different spectral sensitivity. [0044]
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
FIG. 17 is a flowchart illustrating one example process that can be carried out using the system of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An imaging system, comprising: a plurality of junction devices arranged in an array; a controller; and a control bus and a readout bus connected between the junction devices and the controller; wherein: each junction device comprises a semiconductor absorber body, a dielectric film o f insulating oxide that overlies an interface region of the semiconductor absorber body, and a channel layer comprising graphene that overlies the dielectric film [[;]], whereby a graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device; each junction device further comprises a metallic source electrode and a metallic drain electrode contacting opposing ends of the channel layer, and further comprises a metallic back- gate electrode contacting a side of the semiconductor absorber body opposite to the interface region; within each junction device, the source and drain electrodes are connected to the channel layer so that when they are energized by an applied source-drain voltage, a source-drain current passes between them through the channel layer; the controller is configured to provide source-drain voltages for the junction devices; the controller is configured to provide, as back-gate voltages to be applied to the back- gate electrodes of the junction devices, voltage waveforms that rise in magnitude during a rising period of time at a rate sufficient to drive the interface regions of the respective junction devices into deep depletion; the control bus is connected so as to deliver the source-drain voltages and back-gate voltages from the controller to the junction devices; the controller is configured to receive readout signals, comprising signals indicating source-drain current, from the junction devices; the readout bus is connected so as to deliver the readout signals from the junction devices to the controller; and the controller is configured to sample the signal indicating source-drain current from each junction device during the rising periods of time of the back-gate voltage waveform applied to such device while its interface region is in deep depletion. Currently amended
The imaging system of claim 1, wherein the controller is configured to drive all GOS junctions of the array of junction devices into deep depletion simultaneously. Currently amended
The imaging system of claim 1, wherein the controller is configured to provide the source-drain voltages to individually selectable ones of the junction devices and to sample the readout signals indicating source-drain current from individually selectable ones of the junction devices. Original
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices is organized into periodically repeating clusters; each said cluster comprises two or more coplanar junction devices; and the respective junction devices within each said cluster have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices has two lateral dimensions and a depth dimension; in the depth dimension, junction devices are arranged one above the other to form vertically stacked groups of two or more junction devices; and the respective junction devices within each vertically stacked group have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: the imaging system includes ionization detectors; and within the array of junction devices, each of at least some junction devices or clusters of junction devices is vertically stacked with an ionization detector. Original
Canceled
A method for detecting radiant energy with at least a first junction device in which a dielectric film of insulating oxide overlies an interface region of a semiconductor absorber body and a channel layer comprising graphene overlies the dielectric film such that a graphene/oxide/semiconductor (GOS) junction is formed, comprising: applying a time-varying back-gate voltage between the channel layer and a back-gate electrode that contacts a side of the semiconductor absorber body opposed to the interface region, wherein the time-var y ing back-gate voltage has a voltage waveform that rises in magnitude during a rising period of time at a rate sufficient to drive the interface region into deep depletion; and at one or more sampling times within the rising period of time, while the interface region is in deep depletion, measuring a change in electrical resistance of the channel layer. Currently amended
The method of claim 9, wherein the change in electrical resistance of the channel layer is an indication of integrated charge in the interface region. Original
The method of claim 9, performed in an imaging array in which the first junction device is one of a plurality of replicated junction devices. Currently amended
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
deeply depleted graphene-oxide-semiconductor (D₂GOS) detector/GOS junction device
Materials described outside the worked examples.
graphene
insulating oxide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D2GOS detector responsivity (visible wavelengths, stated expectation) | 2500 A/W | graphene |
Voltage | 1–5 V |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
Patent
US 11,287,536Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIGS. 3A-3C illustrate the changes relative to the three preceding figures when the GOS junction is placed under photoexcitation. Under photoexcitation, the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 7. [0084] The plotted data were extracted from linear fits of the data of
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 13 is a notional perspective view of a stacked multimodal array in which each layer has a different spectral sensitivity. [0044]
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
FIG. 17 is a flowchart illustrating one example process that can be carried out using the system of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An imaging system, comprising: a plurality of junction devices arranged in an array; a controller; and a control bus and a readout bus connected between the junction devices and the controller; wherein: each junction device comprises a semiconductor absorber body, a dielectric film o f insulating oxide that overlies an interface region of the semiconductor absorber body, and a channel layer comprising graphene that overlies the dielectric film [[;]], whereby a graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device; each junction device further comprises a metallic source electrode and a metallic drain electrode contacting opposing ends of the channel layer, and further comprises a metallic back- gate electrode contacting a side of the semiconductor absorber body opposite to the interface region; within each junction device, the source and drain electrodes are connected to the channel layer so that when they are energized by an applied source-drain voltage, a source-drain current passes between them through the channel layer; the controller is configured to provide source-drain voltages for the junction devices; the controller is configured to provide, as back-gate voltages to be applied to the back- gate electrodes of the junction devices, voltage waveforms that rise in magnitude during a rising period of time at a rate sufficient to drive the interface regions of the respective junction devices into deep depletion; the control bus is connected so as to deliver the source-drain voltages and back-gate voltages from the controller to the junction devices; the controller is configured to receive readout signals, comprising signals indicating source-drain current, from the junction devices; the readout bus is connected so as to deliver the readout signals from the junction devices to the controller; and the controller is configured to sample the signal indicating source-drain current from each junction device during the rising periods of time of the back-gate voltage waveform applied to such device while its interface region is in deep depletion. Currently amended
The imaging system of claim 1, wherein the controller is configured to drive all GOS junctions of the array of junction devices into deep depletion simultaneously. Currently amended
The imaging system of claim 1, wherein the controller is configured to provide the source-drain voltages to individually selectable ones of the junction devices and to sample the readout signals indicating source-drain current from individually selectable ones of the junction devices. Original
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices is organized into periodically repeating clusters; each said cluster comprises two or more coplanar junction devices; and the respective junction devices within each said cluster have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices has two lateral dimensions and a depth dimension; in the depth dimension, junction devices are arranged one above the other to form vertically stacked groups of two or more junction devices; and the respective junction devices within each vertically stacked group have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: the imaging system includes ionization detectors; and within the array of junction devices, each of at least some junction devices or clusters of junction devices is vertically stacked with an ionization detector. Original
Canceled
A method for detecting radiant energy with at least a first junction device in which a dielectric film of insulating oxide overlies an interface region of a semiconductor absorber body and a channel layer comprising graphene overlies the dielectric film such that a graphene/oxide/semiconductor (GOS) junction is formed, comprising: applying a time-varying back-gate voltage between the channel layer and a back-gate electrode that contacts a side of the semiconductor absorber body opposed to the interface region, wherein the time-var y ing back-gate voltage has a voltage waveform that rises in magnitude during a rising period of time at a rate sufficient to drive the interface region into deep depletion; and at one or more sampling times within the rising period of time, while the interface region is in deep depletion, measuring a change in electrical resistance of the channel layer. Currently amended
The method of claim 9, wherein the change in electrical resistance of the channel layer is an indication of integrated charge in the interface region. Original
The method of claim 9, performed in an imaging array in which the first junction device is one of a plurality of replicated junction devices. Currently amended
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
deeply depleted graphene-oxide-semiconductor (D₂GOS) detector/GOS junction device
Materials described outside the worked examples.
graphene
insulating oxide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D2GOS detector responsivity (visible wavelengths, stated expectation) | 2500 A/W | graphene |
Voltage | 1–5 V |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Patent
Atlas literature
Patent
US 11,287,536Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIGS. 3A-3C illustrate the changes relative to the three preceding figures when the GOS junction is placed under photoexcitation. Under photoexcitation, the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 7. [0084] The plotted data were extracted from linear fits of the data of
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 13 is a notional perspective view of a stacked multimodal array in which each layer has a different spectral sensitivity. [0044]
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
FIG. 17 is a flowchart illustrating one example process that can be carried out using the system of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An imaging system, comprising: a plurality of junction devices arranged in an array; a controller; and a control bus and a readout bus connected between the junction devices and the controller; wherein: each junction device comprises a semiconductor absorber body, a dielectric film o f insulating oxide that overlies an interface region of the semiconductor absorber body, and a channel layer comprising graphene that overlies the dielectric film [[;]], whereby a graphene/oxide/semiconductor (GOS) junction is formed in the interface region of each junction device; each junction device further comprises a metallic source electrode and a metallic drain electrode contacting opposing ends of the channel layer, and further comprises a metallic back- gate electrode contacting a side of the semiconductor absorber body opposite to the interface region; within each junction device, the source and drain electrodes are connected to the channel layer so that when they are energized by an applied source-drain voltage, a source-drain current passes between them through the channel layer; the controller is configured to provide source-drain voltages for the junction devices; the controller is configured to provide, as back-gate voltages to be applied to the back- gate electrodes of the junction devices, voltage waveforms that rise in magnitude during a rising period of time at a rate sufficient to drive the interface regions of the respective junction devices into deep depletion; the control bus is connected so as to deliver the source-drain voltages and back-gate voltages from the controller to the junction devices; the controller is configured to receive readout signals, comprising signals indicating source-drain current, from the junction devices; the readout bus is connected so as to deliver the readout signals from the junction devices to the controller; and the controller is configured to sample the signal indicating source-drain current from each junction device during the rising periods of time of the back-gate voltage waveform applied to such device while its interface region is in deep depletion. Currently amended
The imaging system of claim 1, wherein the controller is configured to drive all GOS junctions of the array of junction devices into deep depletion simultaneously. Currently amended
The imaging system of claim 1, wherein the controller is configured to provide the source-drain voltages to individually selectable ones of the junction devices and to sample the readout signals indicating source-drain current from individually selectable ones of the junction devices. Original
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices is organized into periodically repeating clusters; each said cluster comprises two or more coplanar junction devices; and the respective junction devices within each said cluster have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: each junction device has a respective wavelength range of spectral sensitivity due to optical absorption characteristics of its respective semiconductor absorber body; the array of junction devices has two lateral dimensions and a depth dimension; in the depth dimension, junction devices are arranged one above the other to form vertically stacked groups of two or more junction devices; and the respective junction devices within each vertically stacked group have different wavelength ranges of spectral sensitivity. Previously presented
The imaging system of claim 1, wherein: the imaging system includes ionization detectors; and within the array of junction devices, each of at least some junction devices or clusters of junction devices is vertically stacked with an ionization detector. Original
Canceled
A method for detecting radiant energy with at least a first junction device in which a dielectric film of insulating oxide overlies an interface region of a semiconductor absorber body and a channel layer comprising graphene overlies the dielectric film such that a graphene/oxide/semiconductor (GOS) junction is formed, comprising: applying a time-varying back-gate voltage between the channel layer and a back-gate electrode that contacts a side of the semiconductor absorber body opposed to the interface region, wherein the time-var y ing back-gate voltage has a voltage waveform that rises in magnitude during a rising period of time at a rate sufficient to drive the interface region into deep depletion; and at one or more sampling times within the rising period of time, while the interface region is in deep depletion, measuring a change in electrical resistance of the channel layer. Currently amended
The method of claim 9, wherein the change in electrical resistance of the channel layer is an indication of integrated charge in the interface region. Original
The method of claim 9, performed in an imaging array in which the first junction device is one of a plurality of replicated junction devices. Currently amended
Canceled
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
deeply depleted graphene-oxide-semiconductor (D₂GOS) detector/GOS junction device
Materials described outside the worked examples.
graphene
insulating oxide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B. As seen in the figure, each pixel 19 corresponds to one instantiation of the device of FIG. lA. [0055] Graphene channel conductance is measured using …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D2GOS detector responsivity (visible wavelengths, stated expectation) | 2500 A/W | graphene |
Voltage | 1–5 V |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
semiconductor absorber body
molybdenum disulfide
MoS₂
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
| — |
Duration | 8–9 seconds | — |
Thickness | 500–750 nm | — |
Voltage | ≥ 0.5 V | — |
semiconductor absorber body
molybdenum disulfide
MoS₂
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
| — |
Duration | 8–9 seconds | — |
Thickness | 500–750 nm | — |
Voltage | ≥ 0.5 V | — |
semiconductor absorber body
molybdenum disulfide
MoS₂
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
| — |
Duration | 8–9 seconds | — |
Thickness | 500–750 nm | — |
Voltage | ≥ 0.5 V | — |
semiconductor absorber body
molybdenum disulfide
MoS₂
FIG. 2A is a simplified energy-band diagram of a graphene-oxide-semiconductor (GOS) junction, presented for pedagogical purposes. The band diagram is for the …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 4 is a graph of drain current (I a) measured as a function of back-gate voltage (V b g) for a single D 2 GOS detector under dark conditions and under …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIG. 5. The drain voltage was set 100 mV, the source voltage was set to ground, and the back-gate voltage was referenced to ground. As seen in the figures, the …
FIGS. 6 and 7 are graphs of the responsivity of an example D 2 GOS device as a function of the estimated drain current integration time. [0039]
FIG. 8. Three separate integration times are represented in the figure. [0041]
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 9, the drain current is plotted as a function of optical power for three separate integration times, namely 101 m s, 200 m s, and 296 m s. The drain …
FIG. 10 is a graph of signal-to-noise ratio as a function of integration time for an example D 2 GOS device. Three different illumination powers are represented …
FIG. 11 is a graph of dynamic range (in decibels) as a function of the integration time for an example D 2 GOS detector. As seen in the figure, the D 2 GOS …
FIGS. 12 and 13 notionally illustrate one example implementing this concept. As shown in the figures, a detector layer composed of a wide-bandgap absorber 121 …
FIG. 14, where an absorber 141 for high-energy radiation is combined with an optical absorber 142. The figure also schematically shows graphene (or other two- …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 15, a periodically repeating super-pixel is defined as a cluster of pixels 151, 152, 153 having absorbers 154 with different bandgaps, so that they are …
FIG. 16. As seen in the figure, back-gate voltage pulses are transmitted to the respective D 2 GOS devices to drive them 171 into deep depletion. While in deep …
| — |
Duration | 8–9 seconds | — |
Thickness | 500–750 nm | — |
Voltage | ≥ 0.5 V | — |