Patent
Gallium Nitride-Based Epitaxial Wafer and Method of Producing Nitride Semiconductor Light-Emitting Device
Yusuke Yoshizumi
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Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer comprising: a gallium nitride substrate including a main surface; one or more gallium nitride-based semiconductor films grown on the main surface of the gallium nitride substrate; and an active layer including a quantum well structure, the active layer being grown on the gallium nitride-based semiconductor film; wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w here the first poin an the secnd poin are wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an orientation flat and an edge substantially having a shape of a segment of a circle defined by a central point, and an orientation of the orientation flat corresponds to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an edge substantially having a shape of a circle defined by a central point, and the gallium nitride substrate includes a marker corresponding to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein a difference between a maximum value and a minimum value in the off-angle distribution along an axis running through a central point of the main surface of the gallium nitride substrate is 0.7 0 or less.
canceled
A method of producing a nitride semiconductor light-emitting device comprising: 3 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of a step of simultaneously growing gallium nitride-based semiconductor films on main surfaces of a plurality of gallium nitride substrates placed on a susceptor of a metal-organic vapor phase epitaxy reactor; and a step of forming an active layer including a quantum well structure on each of the gallium nitride-based semiconductor film with the metal-organic vapor phase epitaxy reactor by feeding a source gas, wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface of each gallium nitride substrate and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction across a main surface of the susceptor, and 4 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in the direction in which the source gas flows.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction of an axis crossing a main surface of the susceptor, and this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in a direction in which the source gas flows from upstream to downstream.
The method according to Claim 6, wherein the rotated. circumference of the circle on the main surface of well layer is grown while the susceptor is
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer
nitride semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
difference between max and min off-angle along axis through center of main surface | ≤ 0.7 degrees | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer comprising: a gallium nitride substrate including a main surface; one or more gallium nitride-based semiconductor films grown on the main surface of the gallium nitride substrate; and an active layer including a quantum well structure, the active layer being grown on the gallium nitride-based semiconductor film; wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w here the first poin an the secnd poin are wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an orientation flat and an edge substantially having a shape of a segment of a circle defined by a central point, and an orientation of the orientation flat corresponds to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an edge substantially having a shape of a circle defined by a central point, and the gallium nitride substrate includes a marker corresponding to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein a difference between a maximum value and a minimum value in the off-angle distribution along an axis running through a central point of the main surface of the gallium nitride substrate is 0.7 0 or less.
canceled
A method of producing a nitride semiconductor light-emitting device comprising: 3 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of a step of simultaneously growing gallium nitride-based semiconductor films on main surfaces of a plurality of gallium nitride substrates placed on a susceptor of a metal-organic vapor phase epitaxy reactor; and a step of forming an active layer including a quantum well structure on each of the gallium nitride-based semiconductor film with the metal-organic vapor phase epitaxy reactor by feeding a source gas, wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface of each gallium nitride substrate and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction across a main surface of the susceptor, and 4 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in the direction in which the source gas flows.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction of an axis crossing a main surface of the susceptor, and this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in a direction in which the source gas flows from upstream to downstream.
The method according to Claim 6, wherein the rotated. circumference of the circle on the main surface of well layer is grown while the susceptor is
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer
nitride semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
difference between max and min off-angle along axis through center of main surface | ≤ 0.7 degrees | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer comprising: a gallium nitride substrate including a main surface; one or more gallium nitride-based semiconductor films grown on the main surface of the gallium nitride substrate; and an active layer including a quantum well structure, the active layer being grown on the gallium nitride-based semiconductor film; wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w here the first poin an the secnd poin are wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an orientation flat and an edge substantially having a shape of a segment of a circle defined by a central point, and an orientation of the orientation flat corresponds to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an edge substantially having a shape of a circle defined by a central point, and the gallium nitride substrate includes a marker corresponding to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein a difference between a maximum value and a minimum value in the off-angle distribution along an axis running through a central point of the main surface of the gallium nitride substrate is 0.7 0 or less.
canceled
A method of producing a nitride semiconductor light-emitting device comprising: 3 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of a step of simultaneously growing gallium nitride-based semiconductor films on main surfaces of a plurality of gallium nitride substrates placed on a susceptor of a metal-organic vapor phase epitaxy reactor; and a step of forming an active layer including a quantum well structure on each of the gallium nitride-based semiconductor film with the metal-organic vapor phase epitaxy reactor by feeding a source gas, wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface of each gallium nitride substrate and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction across a main surface of the susceptor, and 4 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in the direction in which the source gas flows.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction of an axis crossing a main surface of the susceptor, and this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in a direction in which the source gas flows from upstream to downstream.
The method according to Claim 6, wherein the rotated. circumference of the circle on the main surface of well layer is grown while the susceptor is
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer
nitride semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
difference between max and min off-angle along axis through center of main surface | ≤ 0.7 degrees | GaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based epitaxial wafer comprising: a gallium nitride substrate including a main surface; one or more gallium nitride-based semiconductor films grown on the main surface of the gallium nitride substrate; and an active layer including a quantum well structure, the active layer being grown on the gallium nitride-based semiconductor film; wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w here the first poin an the secnd poin are wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an orientation flat and an edge substantially having a shape of a segment of a circle defined by a central point, and an orientation of the orientation flat corresponds to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein the gallium nitride substrate includes an edge substantially having a shape of a circle defined by a central point, and the gallium nitride substrate includes a marker corresponding to one of crystal orientations <1-100> and <11-20>.
The gallium nitride-based epitaxial wafer according to Claim 1, wherein a difference between a maximum value and a minimum value in the off-angle distribution along an axis running through a central point of the main surface of the gallium nitride substrate is 0.7 0 or less.
canceled
A method of producing a nitride semiconductor light-emitting device comprising: 3 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of a step of simultaneously growing gallium nitride-based semiconductor films on main surfaces of a plurality of gallium nitride substrates placed on a susceptor of a metal-organic vapor phase epitaxy reactor; and a step of forming an active layer including a quantum well structure on each of the gallium nitride-based semiconductor film with the metal-organic vapor phase epitaxy reactor by feeding a source gas, wherein the active layer includes a well layer composed of a gallium nitride-based semiconductor containing indium as a Group III element, an off-angle between a line normal to the main surface of each gallium nitride substrate and a C-axis of the gallium nitride substrate has a distribution over the main surface and also monotonically varies on a line segment extending from one point on an edge of the main surface to another point on the edge, and the off-angle at a first point on the main surface is smaller than the off-angle at a second point on the main surface, and a thickness of the well layer on the first point is smaller than a thickness of the well layer on the second point, w wherein a reference plane is defined by the line segment and the <1-100> crystal axis or the <11-20> crystal axis, and the line segment is oriented such that the reference plane is orthogonal to the main surface.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction across a main surface of the susceptor, and 4 Application No. 12/532,077 Docket No.: 40616-281113 Reply to Office Action of this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in the direction in which the source gas flows.
The method according to Claim 6, wherein the source gas for forming the active layer is fed in a direction of an axis crossing a main surface of the susceptor, and this feeding of the source gas causes a distribution of a growth rate of the well layer of the active layer in a direction in which the source gas flows from upstream to downstream.
The method according to Claim 6, wherein the rotated. circumference of the circle on the main surface of well layer is grown while the susceptor is
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based epitaxial wafer
nitride semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride substrate
GaN
gallium nitride-based semiconductor film
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
difference between max and min off-angle along axis through center of main surface | ≤ 0.7 degrees | GaN |
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