Patent
US 9,312,432GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING
Ming-Hua Lo
US
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Patent
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Patent
US 9,312,432Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A device, comprising: SVG 13418663.09-15-2015.IELSTU₇APXXIFW3.CLM.1.7.699.669.762.702.svg 0.11 0.21 Chemistry Black and white a first doped V compound layer having a first type of conductivity; a second doped IlI -V compound layer having a second type of conductivity different from the first type of conductivity; and a multiple quantum well (M QW) layer disposed between the first and second doped III-V compound layers, wherein a disposition of the MQW layer relative to the first doped 111-V compound layer allows a dopant f rom the first doped 111 -V compound layer to diffuse into the MQW la y er; wherein the first 11I -V compound layer has a doping concentration curve that includes a single exponential segment and an ppiroxinately linear segment, and wherein a highest point of the exponential segment corresponds to a boundary of the first IlI -V compound layer fIr fro m the MQW 1ayer and wherein the aproximatelv linear segment corresponds to aportion of the fir st U I-V compound layer ad o layer.
The device of claim 1, wherein: the first doped 1I -V compound layer is a p-type doped gallium nitride (p-GaN) layer; and the first doped 11I -V compound layer is doped with magnesium (Mg).
The device of claim 1, wherein the doping concentration curve is a function of depth in a m anner such that the doping concentration of the first II₁ -V compound layer continuously decreases as the depth increases.
The device of claim 1 [[4]], wherein: the first 111-V compound layer include a first portion and a second portion, the first portion being disposed closer to the MQW layer than the second portion; the approximately linear segment of the doping concentration c u rve corresponds to the first portion of the first I ll -V compound la yer; and Application No. 13/418,663 Attorney Docket No. 5610/0401 PU IS₁ Response to Final Office Action dated 15 Jul 2015 Page 3 of 10 the exponential segment of the doping concentration curve corresponds to the second portion of the first 111 -V compound layer.
The device of claim 1 [[4]], wherein: the exponential segment has a doping concentration level in a range from about 1.5 x 1019 ions/centimeters to about 1. 5 x 102 0 ions/centimeter3: and the approximately linear segment has a doping concentration level in a range from about 1. 0 x 1019 ions/centimeter 3 to abo ut 1.5 x 1019 ions/ce ntimeter3.
(Origina l) The device of claim 1, wherein the device includes a vertical light- emitting diode (LED) die,
The device of claim 1, further comprising: a lighting module in which the first and second doped III-V compound layers and the MQW layer are implemented,
canceled
A light-emitting diode (LED), comprising: a substrate; a p-doped III -V compound layer and an n-doped III- V compound layer each disposed over the substrate; and a mu ltiple quantum well (N QW) layer disposed between the p-doped I ll -V compound layer and the n-doped 111 -V compound layer[[;]].herein a dispositio n of the MQW l ayer relative to lthe -doped iT-V compound laer allows a do ant fr om the omdoped Ill-V conm und laver to diffuse into the MOQW yr wherein the p-doped 111-V compound layer and the n -doped 111 -V compound layer are free of having a capping layer therebetween, [[and]] wherein the p-doped 111 -V compound layer includes a first region having a non Capf lkan 4RAppimm ia el_ li near doping concentration characteristic and a second region having an exponential doping concentration characteristic, Application No. 13/418,663 Attorney Docket No. 5610/0401PUS 1 Response to Final Office A ction dated 15 Jul 2015 Page 4 of 10 wherein the first region of the p-doped -ll-V compound layer is adjacent to the MOW layer, wherein the first region is defined from a first surface of the p-doped Ill -V compound layer, wherein the second region is defined from a second surface of the p-doped I₁₁-V compound la y er opposite the first surface, and wherein a part of the second region at the second surface of the p-doped III-V compound layer has a greatest doping concentration and wherein a doping concentration level of the p-doped I II -V compound layer continuously decreases from the second surface to the first surface.
(Origina l) The LED of claim 10, wherein: the p-doped 1 11 -V compound layer contains a gallium nitride material; the first region of the p-doped III -V compound layer has a doping concentration level in a range from about 1. 0 x 10 ' 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter3 and the second region of the p-doped III-V compound layer has a doping concentration level in a range from about 1.5 x 109 ions/centimeter3 to about 1. 5 x 10 20 io ns/centimete r.
The LED of claim 10, wherein a depth of the first region exceeds a depth of the second region by a number of times.
The LED of claim 10, wherein: the LED is a vertical LED; and the substrate is a gallium nitride substrate, a silicon subn m ount, a ceramic submount, or a metal submount.
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A device, comprising: a first doped gallium nitride layer; a multiple quantum well (MQW) layer disposed over the first doped gallium nitride layer; a second doped gallium nitride layer disposed directly on the MQ W layer, wherein the second doped gallium nitride la y er includes a first portion with a n approximately linear doping profile and a second portion with an approximately exponential doping profi le, and wherein the first portion is koated-eiseradjacent to the MQW la y er -m1w seeetp ertime and wh er ein a dispojsiton of the MOW layer relative to the s do gallium nitrid e la y er allow s a dopant fr om t h e s econd doped gallium n itide ayer to d iffustt into the MOW klyer: an d a metal layer bonded to the second portion of the second doped gallium nitride layer, wherein the second portion has a greatest doping concentration level at a n interface between the second portion and the metal layer, wherein a doping concentration level of the second doped gallium nitride layer continuously decreases from a first surface of the second doped gallium nitride layer bonded to the metal layer to a second surface of the second doped gallium nitride layer opposite the first surface.
The device of claim 21, wherein a doping concentration level of the second portion exponentially decreases as a function of a distance from the interface between the second portion and the metal layer.
The device of claim 21, wherein the first portion is at least multiple times thicker than the second portion.
(Previously P resented) The device of claim 21, wherein: the first portion has a doping concentration level in a range from about 1.0 x 101 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter 3; the second portion has a doping concentration level in a range from about 1.5 x 1019 ions/centimeter3 to abo u t 1.5 x 102 0 ions/centimeter '. Application No. 13/418,663 Attorney Dock e t No. 561 0/0401 P US₁ Response to Final Office Action dated 15 Jul 2015 Pag e 6 of
The device of claim 21, further comprising a lighting module in which the first doped gallium nitride layer, the MQW layer, and the second doped galli um nitride layer are disposed.
Layer stacks claimed or described, ordered top of device to substrate.
III-V compound semiconductor device with graded p-type layer
vertical LED die
Materials described outside the worked examples.
n-doped III-V compound layer
p-doped III-V compound layer (p-GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
durability and reliability. These advantages, as well as advancements in LED fabrication technologies that have made LEDs cheaper and more robust, have added to the growing popularity of LEDs in recent years. [0013] Nevertheless, existing LED fabrication techn
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exponential segment doping concentration (first III-V compound layer/second portion of p-GaN) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
approximately linear segment doping concentration (first III-V compound layer/first portion of p-GaN) |
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Patent
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Patent
US 9,312,432Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A device, comprising: SVG 13418663.09-15-2015.IELSTU₇APXXIFW3.CLM.1.7.699.669.762.702.svg 0.11 0.21 Chemistry Black and white a first doped V compound layer having a first type of conductivity; a second doped IlI -V compound layer having a second type of conductivity different from the first type of conductivity; and a multiple quantum well (M QW) layer disposed between the first and second doped III-V compound layers, wherein a disposition of the MQW layer relative to the first doped 111-V compound layer allows a dopant f rom the first doped 111 -V compound layer to diffuse into the MQW la y er; wherein the first 11I -V compound layer has a doping concentration curve that includes a single exponential segment and an ppiroxinately linear segment, and wherein a highest point of the exponential segment corresponds to a boundary of the first IlI -V compound layer fIr fro m the MQW 1ayer and wherein the aproximatelv linear segment corresponds to aportion of the fir st U I-V compound layer ad o layer.
The device of claim 1, wherein: the first doped 1I -V compound layer is a p-type doped gallium nitride (p-GaN) layer; and the first doped 11I -V compound layer is doped with magnesium (Mg).
The device of claim 1, wherein the doping concentration curve is a function of depth in a m anner such that the doping concentration of the first II₁ -V compound layer continuously decreases as the depth increases.
The device of claim 1 [[4]], wherein: the first 111-V compound layer include a first portion and a second portion, the first portion being disposed closer to the MQW layer than the second portion; the approximately linear segment of the doping concentration c u rve corresponds to the first portion of the first I ll -V compound la yer; and Application No. 13/418,663 Attorney Docket No. 5610/0401 PU IS₁ Response to Final Office Action dated 15 Jul 2015 Page 3 of 10 the exponential segment of the doping concentration curve corresponds to the second portion of the first 111 -V compound layer.
The device of claim 1 [[4]], wherein: the exponential segment has a doping concentration level in a range from about 1.5 x 1019 ions/centimeters to about 1. 5 x 102 0 ions/centimeter3: and the approximately linear segment has a doping concentration level in a range from about 1. 0 x 1019 ions/centimeter 3 to abo ut 1.5 x 1019 ions/ce ntimeter3.
(Origina l) The device of claim 1, wherein the device includes a vertical light- emitting diode (LED) die,
The device of claim 1, further comprising: a lighting module in which the first and second doped III-V compound layers and the MQW layer are implemented,
canceled
A light-emitting diode (LED), comprising: a substrate; a p-doped III -V compound layer and an n-doped III- V compound layer each disposed over the substrate; and a mu ltiple quantum well (N QW) layer disposed between the p-doped I ll -V compound layer and the n-doped 111 -V compound layer[[;]].herein a dispositio n of the MQW l ayer relative to lthe -doped iT-V compound laer allows a do ant fr om the omdoped Ill-V conm und laver to diffuse into the MOQW yr wherein the p-doped 111-V compound layer and the n -doped 111 -V compound layer are free of having a capping layer therebetween, [[and]] wherein the p-doped 111 -V compound layer includes a first region having a non Capf lkan 4RAppimm ia el_ li near doping concentration characteristic and a second region having an exponential doping concentration characteristic, Application No. 13/418,663 Attorney Docket No. 5610/0401PUS 1 Response to Final Office A ction dated 15 Jul 2015 Page 4 of 10 wherein the first region of the p-doped -ll-V compound layer is adjacent to the MOW layer, wherein the first region is defined from a first surface of the p-doped Ill -V compound layer, wherein the second region is defined from a second surface of the p-doped I₁₁-V compound la y er opposite the first surface, and wherein a part of the second region at the second surface of the p-doped III-V compound layer has a greatest doping concentration and wherein a doping concentration level of the p-doped I II -V compound layer continuously decreases from the second surface to the first surface.
(Origina l) The LED of claim 10, wherein: the p-doped 1 11 -V compound layer contains a gallium nitride material; the first region of the p-doped III -V compound layer has a doping concentration level in a range from about 1. 0 x 10 ' 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter3 and the second region of the p-doped III-V compound layer has a doping concentration level in a range from about 1.5 x 109 ions/centimeter3 to about 1. 5 x 10 20 io ns/centimete r.
The LED of claim 10, wherein a depth of the first region exceeds a depth of the second region by a number of times.
The LED of claim 10, wherein: the LED is a vertical LED; and the substrate is a gallium nitride substrate, a silicon subn m ount, a ceramic submount, or a metal submount.
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A device, comprising: a first doped gallium nitride layer; a multiple quantum well (MQW) layer disposed over the first doped gallium nitride layer; a second doped gallium nitride layer disposed directly on the MQ W layer, wherein the second doped gallium nitride la y er includes a first portion with a n approximately linear doping profile and a second portion with an approximately exponential doping profi le, and wherein the first portion is koated-eiseradjacent to the MQW la y er -m1w seeetp ertime and wh er ein a dispojsiton of the MOW layer relative to the s do gallium nitrid e la y er allow s a dopant fr om t h e s econd doped gallium n itide ayer to d iffustt into the MOW klyer: an d a metal layer bonded to the second portion of the second doped gallium nitride layer, wherein the second portion has a greatest doping concentration level at a n interface between the second portion and the metal layer, wherein a doping concentration level of the second doped gallium nitride layer continuously decreases from a first surface of the second doped gallium nitride layer bonded to the metal layer to a second surface of the second doped gallium nitride layer opposite the first surface.
The device of claim 21, wherein a doping concentration level of the second portion exponentially decreases as a function of a distance from the interface between the second portion and the metal layer.
The device of claim 21, wherein the first portion is at least multiple times thicker than the second portion.
(Previously P resented) The device of claim 21, wherein: the first portion has a doping concentration level in a range from about 1.0 x 101 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter 3; the second portion has a doping concentration level in a range from about 1.5 x 1019 ions/centimeter3 to abo u t 1.5 x 102 0 ions/centimeter '. Application No. 13/418,663 Attorney Dock e t No. 561 0/0401 P US₁ Response to Final Office Action dated 15 Jul 2015 Pag e 6 of
The device of claim 21, further comprising a lighting module in which the first doped gallium nitride layer, the MQW layer, and the second doped galli um nitride layer are disposed.
Layer stacks claimed or described, ordered top of device to substrate.
III-V compound semiconductor device with graded p-type layer
vertical LED die
Materials described outside the worked examples.
n-doped III-V compound layer
p-doped III-V compound layer (p-GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
durability and reliability. These advantages, as well as advancements in LED fabrication technologies that have made LEDs cheaper and more robust, have added to the growing popularity of LEDs in recent years. [0013] Nevertheless, existing LED fabrication techn
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exponential segment doping concentration (first III-V compound layer/second portion of p-GaN) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
approximately linear segment doping concentration (first III-V compound layer/first portion of p-GaN) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,312,432Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A device, comprising: SVG 13418663.09-15-2015.IELSTU₇APXXIFW3.CLM.1.7.699.669.762.702.svg 0.11 0.21 Chemistry Black and white a first doped V compound layer having a first type of conductivity; a second doped IlI -V compound layer having a second type of conductivity different from the first type of conductivity; and a multiple quantum well (M QW) layer disposed between the first and second doped III-V compound layers, wherein a disposition of the MQW layer relative to the first doped 111-V compound layer allows a dopant f rom the first doped 111 -V compound layer to diffuse into the MQW la y er; wherein the first 11I -V compound layer has a doping concentration curve that includes a single exponential segment and an ppiroxinately linear segment, and wherein a highest point of the exponential segment corresponds to a boundary of the first IlI -V compound layer fIr fro m the MQW 1ayer and wherein the aproximatelv linear segment corresponds to aportion of the fir st U I-V compound layer ad o layer.
The device of claim 1, wherein: the first doped 1I -V compound layer is a p-type doped gallium nitride (p-GaN) layer; and the first doped 11I -V compound layer is doped with magnesium (Mg).
The device of claim 1, wherein the doping concentration curve is a function of depth in a m anner such that the doping concentration of the first II₁ -V compound layer continuously decreases as the depth increases.
The device of claim 1 [[4]], wherein: the first 111-V compound layer include a first portion and a second portion, the first portion being disposed closer to the MQW layer than the second portion; the approximately linear segment of the doping concentration c u rve corresponds to the first portion of the first I ll -V compound la yer; and Application No. 13/418,663 Attorney Docket No. 5610/0401 PU IS₁ Response to Final Office Action dated 15 Jul 2015 Page 3 of 10 the exponential segment of the doping concentration curve corresponds to the second portion of the first 111 -V compound layer.
The device of claim 1 [[4]], wherein: the exponential segment has a doping concentration level in a range from about 1.5 x 1019 ions/centimeters to about 1. 5 x 102 0 ions/centimeter3: and the approximately linear segment has a doping concentration level in a range from about 1. 0 x 1019 ions/centimeter 3 to abo ut 1.5 x 1019 ions/ce ntimeter3.
(Origina l) The device of claim 1, wherein the device includes a vertical light- emitting diode (LED) die,
The device of claim 1, further comprising: a lighting module in which the first and second doped III-V compound layers and the MQW layer are implemented,
canceled
A light-emitting diode (LED), comprising: a substrate; a p-doped III -V compound layer and an n-doped III- V compound layer each disposed over the substrate; and a mu ltiple quantum well (N QW) layer disposed between the p-doped I ll -V compound layer and the n-doped 111 -V compound layer[[;]].herein a dispositio n of the MQW l ayer relative to lthe -doped iT-V compound laer allows a do ant fr om the omdoped Ill-V conm und laver to diffuse into the MOQW yr wherein the p-doped 111-V compound layer and the n -doped 111 -V compound layer are free of having a capping layer therebetween, [[and]] wherein the p-doped 111 -V compound layer includes a first region having a non Capf lkan 4RAppimm ia el_ li near doping concentration characteristic and a second region having an exponential doping concentration characteristic, Application No. 13/418,663 Attorney Docket No. 5610/0401PUS 1 Response to Final Office A ction dated 15 Jul 2015 Page 4 of 10 wherein the first region of the p-doped -ll-V compound layer is adjacent to the MOW layer, wherein the first region is defined from a first surface of the p-doped Ill -V compound layer, wherein the second region is defined from a second surface of the p-doped I₁₁-V compound la y er opposite the first surface, and wherein a part of the second region at the second surface of the p-doped III-V compound layer has a greatest doping concentration and wherein a doping concentration level of the p-doped I II -V compound layer continuously decreases from the second surface to the first surface.
(Origina l) The LED of claim 10, wherein: the p-doped 1 11 -V compound layer contains a gallium nitride material; the first region of the p-doped III -V compound layer has a doping concentration level in a range from about 1. 0 x 10 ' 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter3 and the second region of the p-doped III-V compound layer has a doping concentration level in a range from about 1.5 x 109 ions/centimeter3 to about 1. 5 x 10 20 io ns/centimete r.
The LED of claim 10, wherein a depth of the first region exceeds a depth of the second region by a number of times.
The LED of claim 10, wherein: the LED is a vertical LED; and the substrate is a gallium nitride substrate, a silicon subn m ount, a ceramic submount, or a metal submount.
canceled
canceled
16- 20. canceled
canceled
canceled
canceled
canceled
A device, comprising: a first doped gallium nitride layer; a multiple quantum well (MQW) layer disposed over the first doped gallium nitride layer; a second doped gallium nitride layer disposed directly on the MQ W layer, wherein the second doped gallium nitride la y er includes a first portion with a n approximately linear doping profile and a second portion with an approximately exponential doping profi le, and wherein the first portion is koated-eiseradjacent to the MQW la y er -m1w seeetp ertime and wh er ein a dispojsiton of the MOW layer relative to the s do gallium nitrid e la y er allow s a dopant fr om t h e s econd doped gallium n itide ayer to d iffustt into the MOW klyer: an d a metal layer bonded to the second portion of the second doped gallium nitride layer, wherein the second portion has a greatest doping concentration level at a n interface between the second portion and the metal layer, wherein a doping concentration level of the second doped gallium nitride layer continuously decreases from a first surface of the second doped gallium nitride layer bonded to the metal layer to a second surface of the second doped gallium nitride layer opposite the first surface.
The device of claim 21, wherein a doping concentration level of the second portion exponentially decreases as a function of a distance from the interface between the second portion and the metal layer.
The device of claim 21, wherein the first portion is at least multiple times thicker than the second portion.
(Previously P resented) The device of claim 21, wherein: the first portion has a doping concentration level in a range from about 1.0 x 101 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter 3; the second portion has a doping concentration level in a range from about 1.5 x 1019 ions/centimeter3 to abo u t 1.5 x 102 0 ions/centimeter '. Application No. 13/418,663 Attorney Dock e t No. 561 0/0401 P US₁ Response to Final Office Action dated 15 Jul 2015 Pag e 6 of
The device of claim 21, further comprising a lighting module in which the first doped gallium nitride layer, the MQW layer, and the second doped galli um nitride layer are disposed.
Layer stacks claimed or described, ordered top of device to substrate.
III-V compound semiconductor device with graded p-type layer
vertical LED die
Materials described outside the worked examples.
n-doped III-V compound layer
p-doped III-V compound layer (p-GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
durability and reliability. These advantages, as well as advancements in LED fabrication technologies that have made LEDs cheaper and more robust, have added to the growing popularity of LEDs in recent years. [0013] Nevertheless, existing LED fabrication techn
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exponential segment doping concentration (first III-V compound layer/second portion of p-GaN) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
approximately linear segment doping concentration (first III-V compound layer/first portion of p-GaN) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,312,432Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A device, comprising: SVG 13418663.09-15-2015.IELSTU₇APXXIFW3.CLM.1.7.699.669.762.702.svg 0.11 0.21 Chemistry Black and white a first doped V compound layer having a first type of conductivity; a second doped IlI -V compound layer having a second type of conductivity different from the first type of conductivity; and a multiple quantum well (M QW) layer disposed between the first and second doped III-V compound layers, wherein a disposition of the MQW layer relative to the first doped 111-V compound layer allows a dopant f rom the first doped 111 -V compound layer to diffuse into the MQW la y er; wherein the first 11I -V compound layer has a doping concentration curve that includes a single exponential segment and an ppiroxinately linear segment, and wherein a highest point of the exponential segment corresponds to a boundary of the first IlI -V compound layer fIr fro m the MQW 1ayer and wherein the aproximatelv linear segment corresponds to aportion of the fir st U I-V compound layer ad o layer.
The device of claim 1, wherein: the first doped 1I -V compound layer is a p-type doped gallium nitride (p-GaN) layer; and the first doped 11I -V compound layer is doped with magnesium (Mg).
The device of claim 1, wherein the doping concentration curve is a function of depth in a m anner such that the doping concentration of the first II₁ -V compound layer continuously decreases as the depth increases.
The device of claim 1 [[4]], wherein: the first 111-V compound layer include a first portion and a second portion, the first portion being disposed closer to the MQW layer than the second portion; the approximately linear segment of the doping concentration c u rve corresponds to the first portion of the first I ll -V compound la yer; and Application No. 13/418,663 Attorney Docket No. 5610/0401 PU IS₁ Response to Final Office Action dated 15 Jul 2015 Page 3 of 10 the exponential segment of the doping concentration curve corresponds to the second portion of the first 111 -V compound layer.
The device of claim 1 [[4]], wherein: the exponential segment has a doping concentration level in a range from about 1.5 x 1019 ions/centimeters to about 1. 5 x 102 0 ions/centimeter3: and the approximately linear segment has a doping concentration level in a range from about 1. 0 x 1019 ions/centimeter 3 to abo ut 1.5 x 1019 ions/ce ntimeter3.
(Origina l) The device of claim 1, wherein the device includes a vertical light- emitting diode (LED) die,
The device of claim 1, further comprising: a lighting module in which the first and second doped III-V compound layers and the MQW layer are implemented,
canceled
A light-emitting diode (LED), comprising: a substrate; a p-doped III -V compound layer and an n-doped III- V compound layer each disposed over the substrate; and a mu ltiple quantum well (N QW) layer disposed between the p-doped I ll -V compound layer and the n-doped 111 -V compound layer[[;]].herein a dispositio n of the MQW l ayer relative to lthe -doped iT-V compound laer allows a do ant fr om the omdoped Ill-V conm und laver to diffuse into the MOQW yr wherein the p-doped 111-V compound layer and the n -doped 111 -V compound layer are free of having a capping layer therebetween, [[and]] wherein the p-doped 111 -V compound layer includes a first region having a non Capf lkan 4RAppimm ia el_ li near doping concentration characteristic and a second region having an exponential doping concentration characteristic, Application No. 13/418,663 Attorney Docket No. 5610/0401PUS 1 Response to Final Office A ction dated 15 Jul 2015 Page 4 of 10 wherein the first region of the p-doped -ll-V compound layer is adjacent to the MOW layer, wherein the first region is defined from a first surface of the p-doped Ill -V compound layer, wherein the second region is defined from a second surface of the p-doped I₁₁-V compound la y er opposite the first surface, and wherein a part of the second region at the second surface of the p-doped III-V compound layer has a greatest doping concentration and wherein a doping concentration level of the p-doped I II -V compound layer continuously decreases from the second surface to the first surface.
(Origina l) The LED of claim 10, wherein: the p-doped 1 11 -V compound layer contains a gallium nitride material; the first region of the p-doped III -V compound layer has a doping concentration level in a range from about 1. 0 x 10 ' 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter3 and the second region of the p-doped III-V compound layer has a doping concentration level in a range from about 1.5 x 109 ions/centimeter3 to about 1. 5 x 10 20 io ns/centimete r.
The LED of claim 10, wherein a depth of the first region exceeds a depth of the second region by a number of times.
The LED of claim 10, wherein: the LED is a vertical LED; and the substrate is a gallium nitride substrate, a silicon subn m ount, a ceramic submount, or a metal submount.
canceled
canceled
16- 20. canceled
canceled
canceled
canceled
canceled
A device, comprising: a first doped gallium nitride layer; a multiple quantum well (MQW) layer disposed over the first doped gallium nitride layer; a second doped gallium nitride layer disposed directly on the MQ W layer, wherein the second doped gallium nitride la y er includes a first portion with a n approximately linear doping profile and a second portion with an approximately exponential doping profi le, and wherein the first portion is koated-eiseradjacent to the MQW la y er -m1w seeetp ertime and wh er ein a dispojsiton of the MOW layer relative to the s do gallium nitrid e la y er allow s a dopant fr om t h e s econd doped gallium n itide ayer to d iffustt into the MOW klyer: an d a metal layer bonded to the second portion of the second doped gallium nitride layer, wherein the second portion has a greatest doping concentration level at a n interface between the second portion and the metal layer, wherein a doping concentration level of the second doped gallium nitride layer continuously decreases from a first surface of the second doped gallium nitride layer bonded to the metal layer to a second surface of the second doped gallium nitride layer opposite the first surface.
The device of claim 21, wherein a doping concentration level of the second portion exponentially decreases as a function of a distance from the interface between the second portion and the metal layer.
The device of claim 21, wherein the first portion is at least multiple times thicker than the second portion.
(Previously P resented) The device of claim 21, wherein: the first portion has a doping concentration level in a range from about 1.0 x 101 9 ions/centimeter3 to about 1.5 x 1019 ions/centi m eter 3; the second portion has a doping concentration level in a range from about 1.5 x 1019 ions/centimeter3 to abo u t 1.5 x 102 0 ions/centimeter '. Application No. 13/418,663 Attorney Dock e t No. 561 0/0401 P US₁ Response to Final Office Action dated 15 Jul 2015 Pag e 6 of
The device of claim 21, further comprising a lighting module in which the first doped gallium nitride layer, the MQW layer, and the second doped galli um nitride layer are disposed.
Layer stacks claimed or described, ordered top of device to substrate.
III-V compound semiconductor device with graded p-type layer
vertical LED die
Materials described outside the worked examples.
n-doped III-V compound layer
p-doped III-V compound layer (p-GaN)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
durability and reliability. These advantages, as well as advancements in LED fabrication technologies that have made LEDs cheaper and more robust, have added to the growing popularity of LEDs in recent years. [0013] Nevertheless, existing LED fabrication techn
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
exponential segment doping concentration (first III-V compound layer/second portion of p-GaN) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
approximately linear segment doping concentration (first III-V compound layer/first portion of p-GaN) |
Related documents with shared materials, methods, properties, or citations.
light-emitting diode (LED)
device with graded p-GaN and metal contact
LED epi-wafer stack (described embodiment)
multiple quantum well (MQW) layer
magnesium dopant
Mg
substrate (GaN, Si, ceramic, or metal submount)
metal layer
MQW active sub-layers (GaN/InGaN)
electron blocking layer (AlGaN:Mg)
AlGaN
substrate
GaN |
first region (approximately linear) doping concentration of p-GaN (claim 12) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second region (exponential) doping concentration of p-GaN (claim 12) | 1500000000–150000000000000000000 ions/cm3 | GaN |
first portion (approximately linear) doping concentration of second doped GaN layer (claim 24) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second portion (exponential) doping concentration of second doped GaN layer (claim 24) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
substrate thickness | 200–1000 um | substrate |
U-GaN buffer layer thickness | 1.5–3 um | GaN |
n-GaN layer thickness | 2–4 um | GaN |
MQW layer thickness | 90–200 nm | MQW active sub-layers (GaN/InGaN) |
electron blocking layer (AlGaN) thickness | 15–20 nm | AlGaN |
Thickness | 30–80 nm | — |
Thickness | 150–200 nm | — |
light-emitting diode (LED)
device with graded p-GaN and metal contact
LED epi-wafer stack (described embodiment)
multiple quantum well (MQW) layer
magnesium dopant
Mg
substrate (GaN, Si, ceramic, or metal submount)
metal layer
MQW active sub-layers (GaN/InGaN)
electron blocking layer (AlGaN:Mg)
AlGaN
substrate
GaN |
first region (approximately linear) doping concentration of p-GaN (claim 12) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second region (exponential) doping concentration of p-GaN (claim 12) | 1500000000–150000000000000000000 ions/cm3 | GaN |
first portion (approximately linear) doping concentration of second doped GaN layer (claim 24) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second portion (exponential) doping concentration of second doped GaN layer (claim 24) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
substrate thickness | 200–1000 um | substrate |
U-GaN buffer layer thickness | 1.5–3 um | GaN |
n-GaN layer thickness | 2–4 um | GaN |
MQW layer thickness | 90–200 nm | MQW active sub-layers (GaN/InGaN) |
electron blocking layer (AlGaN) thickness | 15–20 nm | AlGaN |
Thickness | 30–80 nm | — |
Thickness | 150–200 nm | — |
light-emitting diode (LED)
device with graded p-GaN and metal contact
LED epi-wafer stack (described embodiment)
multiple quantum well (MQW) layer
magnesium dopant
Mg
substrate (GaN, Si, ceramic, or metal submount)
metal layer
MQW active sub-layers (GaN/InGaN)
electron blocking layer (AlGaN:Mg)
AlGaN
substrate
GaN |
first region (approximately linear) doping concentration of p-GaN (claim 12) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second region (exponential) doping concentration of p-GaN (claim 12) | 1500000000–150000000000000000000 ions/cm3 | GaN |
first portion (approximately linear) doping concentration of second doped GaN layer (claim 24) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second portion (exponential) doping concentration of second doped GaN layer (claim 24) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
substrate thickness | 200–1000 um | substrate |
U-GaN buffer layer thickness | 1.5–3 um | GaN |
n-GaN layer thickness | 2–4 um | GaN |
MQW layer thickness | 90–200 nm | MQW active sub-layers (GaN/InGaN) |
electron blocking layer (AlGaN) thickness | 15–20 nm | AlGaN |
Thickness | 30–80 nm | — |
Thickness | 150–200 nm | — |
light-emitting diode (LED)
device with graded p-GaN and metal contact
LED epi-wafer stack (described embodiment)
multiple quantum well (MQW) layer
magnesium dopant
Mg
substrate (GaN, Si, ceramic, or metal submount)
metal layer
MQW active sub-layers (GaN/InGaN)
electron blocking layer (AlGaN:Mg)
AlGaN
substrate
GaN |
first region (approximately linear) doping concentration of p-GaN (claim 12) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second region (exponential) doping concentration of p-GaN (claim 12) | 1500000000–150000000000000000000 ions/cm3 | GaN |
first portion (approximately linear) doping concentration of second doped GaN layer (claim 24) | 10000000000000000000–15000000000000000000 ions/cm3 | GaN |
second portion (exponential) doping concentration of second doped GaN layer (claim 24) | 15000000000000000000–150000000000000000000 ions/cm3 | GaN |
substrate thickness | 200–1000 um | substrate |
U-GaN buffer layer thickness | 1.5–3 um | GaN |
n-GaN layer thickness | 2–4 um | GaN |
MQW layer thickness | 90–200 nm | MQW active sub-layers (GaN/InGaN) |
electron blocking layer (AlGaN) thickness | 15–20 nm | AlGaN |
Thickness | 30–80 nm | — |
Thickness | 150–200 nm | — |