Patent
US 8,592,289of Invention: EPITAXIAL WAFER, METHOD FOR
Shin Hashimoto
US
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Patent
Atlas literature
Patent
US 8,592,289Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial wafer for a gallium nitride based semiconductor device, comprising: a gallium oxide wafer with a primary surface, the primary 5 surface comprising monoclinic gallium oxide; a buffer layer provided on the primary surface of the gallium oxide wafer, the buffer layer comprising a Group III nitride; and a first epitaxial layer provided on the buffer layer, the first epitaxial layer comprising a first gallium nitride based semiconductor, 10 the primary surface of the gallium oxide wafer being inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1, wherein a direction of inclination of the primary surface of the gallium oxide 15 wafer is a direction of a [001] axis of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1 or claim 2, wherein a crystal structure of the first gallium nitride based semiconductor is a hexagonal crystal, and wherein a normal to a primary surface of the first epitaxial layer 20 makes an angle of not more than 1 degree relative to a c-axis of the first gallium nitride based semiconductor.
The epitaxial wafer according to any one of claims 1 to 3, wherein surface roughness (RMS) in a primary surface of the first epitaxial layer is not more than 0.5 nm in an area 5 micrometers square.
5. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises GaN.
FP09-05 64- OO US-SE 6. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises AlGaN.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial wafer for gallium nitride based semiconductor device
light emitting diode (LED) on gallium oxide support base
Materials described outside the worked examples.
monoclinic gallium oxide
Ga₂O₃
Group III nitride buffer layer
gallium nitride based semiconductor (first epitaxial layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness of first epitaxial layer primary surface | — | gallium nitride based semiconductor (first epitaxial layer) |
inclination angle of primary surface of gallium oxide wafer relative to (100) plane of monoclinic gallium oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,592,289Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial wafer for a gallium nitride based semiconductor device, comprising: a gallium oxide wafer with a primary surface, the primary 5 surface comprising monoclinic gallium oxide; a buffer layer provided on the primary surface of the gallium oxide wafer, the buffer layer comprising a Group III nitride; and a first epitaxial layer provided on the buffer layer, the first epitaxial layer comprising a first gallium nitride based semiconductor, 10 the primary surface of the gallium oxide wafer being inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1, wherein a direction of inclination of the primary surface of the gallium oxide 15 wafer is a direction of a [001] axis of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1 or claim 2, wherein a crystal structure of the first gallium nitride based semiconductor is a hexagonal crystal, and wherein a normal to a primary surface of the first epitaxial layer 20 makes an angle of not more than 1 degree relative to a c-axis of the first gallium nitride based semiconductor.
The epitaxial wafer according to any one of claims 1 to 3, wherein surface roughness (RMS) in a primary surface of the first epitaxial layer is not more than 0.5 nm in an area 5 micrometers square.
5. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises GaN.
FP09-05 64- OO US-SE 6. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises AlGaN.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial wafer for gallium nitride based semiconductor device
light emitting diode (LED) on gallium oxide support base
Materials described outside the worked examples.
monoclinic gallium oxide
Ga₂O₃
Group III nitride buffer layer
gallium nitride based semiconductor (first epitaxial layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness of first epitaxial layer primary surface | — | gallium nitride based semiconductor (first epitaxial layer) |
inclination angle of primary surface of gallium oxide wafer relative to (100) plane of monoclinic gallium oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,592,289Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial wafer for a gallium nitride based semiconductor device, comprising: a gallium oxide wafer with a primary surface, the primary 5 surface comprising monoclinic gallium oxide; a buffer layer provided on the primary surface of the gallium oxide wafer, the buffer layer comprising a Group III nitride; and a first epitaxial layer provided on the buffer layer, the first epitaxial layer comprising a first gallium nitride based semiconductor, 10 the primary surface of the gallium oxide wafer being inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1, wherein a direction of inclination of the primary surface of the gallium oxide 15 wafer is a direction of a [001] axis of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1 or claim 2, wherein a crystal structure of the first gallium nitride based semiconductor is a hexagonal crystal, and wherein a normal to a primary surface of the first epitaxial layer 20 makes an angle of not more than 1 degree relative to a c-axis of the first gallium nitride based semiconductor.
The epitaxial wafer according to any one of claims 1 to 3, wherein surface roughness (RMS) in a primary surface of the first epitaxial layer is not more than 0.5 nm in an area 5 micrometers square.
5. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises GaN.
FP09-05 64- OO US-SE 6. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises AlGaN.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial wafer for gallium nitride based semiconductor device
light emitting diode (LED) on gallium oxide support base
Materials described outside the worked examples.
monoclinic gallium oxide
Ga₂O₃
Group III nitride buffer layer
gallium nitride based semiconductor (first epitaxial layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness of first epitaxial layer primary surface | — | gallium nitride based semiconductor (first epitaxial layer) |
inclination angle of primary surface of gallium oxide wafer relative to (100) plane of monoclinic gallium oxide |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,592,289Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial wafer for a gallium nitride based semiconductor device, comprising: a gallium oxide wafer with a primary surface, the primary 5 surface comprising monoclinic gallium oxide; a buffer layer provided on the primary surface of the gallium oxide wafer, the buffer layer comprising a Group III nitride; and a first epitaxial layer provided on the buffer layer, the first epitaxial layer comprising a first gallium nitride based semiconductor, 10 the primary surface of the gallium oxide wafer being inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1, wherein a direction of inclination of the primary surface of the gallium oxide 15 wafer is a direction of a [001] axis of the monoclinic gallium oxide.
The epitaxial wafer according to claim 1 or claim 2, wherein a crystal structure of the first gallium nitride based semiconductor is a hexagonal crystal, and wherein a normal to a primary surface of the first epitaxial layer 20 makes an angle of not more than 1 degree relative to a c-axis of the first gallium nitride based semiconductor.
The epitaxial wafer according to any one of claims 1 to 3, wherein surface roughness (RMS) in a primary surface of the first epitaxial layer is not more than 0.5 nm in an area 5 micrometers square.
5. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises GaN.
FP09-05 64- OO US-SE 6. The epitaxial wafer according to any one of claims 1 to 4, wherein the first gallium nitride based semiconductor comprises AlGaN.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial wafer for gallium nitride based semiconductor device
light emitting diode (LED) on gallium oxide support base
Materials described outside the worked examples.
monoclinic gallium oxide
Ga₂O₃
Group III nitride buffer layer
gallium nitride based semiconductor (first epitaxial layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness of first epitaxial layer primary surface | — | gallium nitride based semiconductor (first epitaxial layer) |
inclination angle of primary surface of gallium oxide wafer relative to (100) plane of monoclinic gallium oxide |
Related documents with shared materials, methods, properties, or citations.
GaN
AlGaN
p-type gallium nitride based semiconductor layer
active layer (quantum well structure)
Ga₂O₃ |
preferred inclination angle of primary surface of gallium oxide wafer relative to (100) plane (narrower range) | — | Ga₂O₃ |
angle between normal to primary surface of first epitaxial layer and c-axis of first GaN-based semiconductor | — | gallium nitride based semiconductor (first epitaxial layer) |
Thickness | ≥ 0.5 nm | — |
GaN
AlGaN
p-type gallium nitride based semiconductor layer
active layer (quantum well structure)
Ga₂O₃ |
preferred inclination angle of primary surface of gallium oxide wafer relative to (100) plane (narrower range) | — | Ga₂O₃ |
angle between normal to primary surface of first epitaxial layer and c-axis of first GaN-based semiconductor | — | gallium nitride based semiconductor (first epitaxial layer) |
Thickness | ≥ 0.5 nm | — |
GaN
AlGaN
p-type gallium nitride based semiconductor layer
active layer (quantum well structure)
Ga₂O₃ |
preferred inclination angle of primary surface of gallium oxide wafer relative to (100) plane (narrower range) | — | Ga₂O₃ |
angle between normal to primary surface of first epitaxial layer and c-axis of first GaN-based semiconductor | — | gallium nitride based semiconductor (first epitaxial layer) |
Thickness | ≥ 0.5 nm | — |
GaN
AlGaN
p-type gallium nitride based semiconductor layer
active layer (quantum well structure)
Ga₂O₃ |
preferred inclination angle of primary surface of gallium oxide wafer relative to (100) plane (narrower range) | — | Ga₂O₃ |
angle between normal to primary surface of first epitaxial layer and c-axis of first GaN-based semiconductor | — | gallium nitride based semiconductor (first epitaxial layer) |
Thickness | ≥ 0.5 nm | — |