Patent
US 9,281,417GaN-BASED SCHOTTKY DIODE HAVING LARGE BOND PADS AND REDUCED CONTACT RESISTANCE
Yih-Yin Lin
US
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Atlas literature
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US 9,281,417Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a plan view of a GaN-based Schottky diode that employs interdigitated electrodes. [0010]
FIG. 3 shows a plan view of a GaN-based Schottky diode in which the anode pad is placed over the interdigitated portions of the electrodes. [0011]
FIG. 4 is a partial, cross-sectional view of a GaN-based Schottky diode. [0012]
FIG. 5b shows a plan view of GaN-based Schottky diode with the anode removed so that the underlying finger electrodes are visible. [0014]
FIG. 6 is a cross-sectional view of the diode shown in
FIG. 7 is a cross-sectional view of the diode shown in
FIG. 8 shows a plan view of a GaN-based Schottky diode that employs circular Schottky electrodes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first series of fingers in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second series of fingers being in electrical contact with the second electrode pad, the first and second series of electrode fingers forming an interdigitated pattern and the first electrode pad being located over the first and second series of electrode fingers.
The semiconductor device of claim 1, further comprising a dielectric layer located between the first electrode pad and the second series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is located over a portion of the second series of fingers that does not form the interdigitated pattern with the first series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is surrounded by the first electrode pad.
The semiconductor device of claim 1, wherein the first and second series of electrode fingers each include first and second electrode portions that are spaced apart from one another, the first electrode portions of the first and second series of electrode fingers forming a first interdigitated pattern and the second -12- Attorney Ref. No. GS₂₄₈ electrode portions of the first and second series of electrode fingers forming a second interdigitated pattern spatially separated from the first interdigitated pattern.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein each of the first plurality of electrodes are hexagonal in shape. -14-
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first plurality of electrodes in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second plurality of electrodes being in electrical contact with the second electrode pad, the first electrode pad being located over the first and second plurality of electrodes.
The semiconductor device of claim 11, wherein each of the first plurality of electrodes are circular in shape.
The semiconductor device of claim 11, wherein at least one electrode in the first plurality of electrodes is rectangular in shape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with interdigitated finger electrodes and overlying anode pad
GaN-based Schottky diode with plurality of discrete electrodes and overlying first electrode pad
Materials described outside the worked examples.
group III nitride semiconductor
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,281,417Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a plan view of a GaN-based Schottky diode that employs interdigitated electrodes. [0010]
FIG. 3 shows a plan view of a GaN-based Schottky diode in which the anode pad is placed over the interdigitated portions of the electrodes. [0011]
FIG. 4 is a partial, cross-sectional view of a GaN-based Schottky diode. [0012]
FIG. 5b shows a plan view of GaN-based Schottky diode with the anode removed so that the underlying finger electrodes are visible. [0014]
FIG. 6 is a cross-sectional view of the diode shown in
FIG. 7 is a cross-sectional view of the diode shown in
FIG. 8 shows a plan view of a GaN-based Schottky diode that employs circular Schottky electrodes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first series of fingers in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second series of fingers being in electrical contact with the second electrode pad, the first and second series of electrode fingers forming an interdigitated pattern and the first electrode pad being located over the first and second series of electrode fingers.
The semiconductor device of claim 1, further comprising a dielectric layer located between the first electrode pad and the second series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is located over a portion of the second series of fingers that does not form the interdigitated pattern with the first series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is surrounded by the first electrode pad.
The semiconductor device of claim 1, wherein the first and second series of electrode fingers each include first and second electrode portions that are spaced apart from one another, the first electrode portions of the first and second series of electrode fingers forming a first interdigitated pattern and the second -12- Attorney Ref. No. GS₂₄₈ electrode portions of the first and second series of electrode fingers forming a second interdigitated pattern spatially separated from the first interdigitated pattern.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein each of the first plurality of electrodes are hexagonal in shape. -14-
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first plurality of electrodes in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second plurality of electrodes being in electrical contact with the second electrode pad, the first electrode pad being located over the first and second plurality of electrodes.
The semiconductor device of claim 11, wherein each of the first plurality of electrodes are circular in shape.
The semiconductor device of claim 11, wherein at least one electrode in the first plurality of electrodes is rectangular in shape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with interdigitated finger electrodes and overlying anode pad
GaN-based Schottky diode with plurality of discrete electrodes and overlying first electrode pad
Materials described outside the worked examples.
group III nitride semiconductor
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,281,417Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a plan view of a GaN-based Schottky diode that employs interdigitated electrodes. [0010]
FIG. 3 shows a plan view of a GaN-based Schottky diode in which the anode pad is placed over the interdigitated portions of the electrodes. [0011]
FIG. 4 is a partial, cross-sectional view of a GaN-based Schottky diode. [0012]
FIG. 5b shows a plan view of GaN-based Schottky diode with the anode removed so that the underlying finger electrodes are visible. [0014]
FIG. 6 is a cross-sectional view of the diode shown in
FIG. 7 is a cross-sectional view of the diode shown in
FIG. 8 shows a plan view of a GaN-based Schottky diode that employs circular Schottky electrodes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first series of fingers in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second series of fingers being in electrical contact with the second electrode pad, the first and second series of electrode fingers forming an interdigitated pattern and the first electrode pad being located over the first and second series of electrode fingers.
The semiconductor device of claim 1, further comprising a dielectric layer located between the first electrode pad and the second series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is located over a portion of the second series of fingers that does not form the interdigitated pattern with the first series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is surrounded by the first electrode pad.
The semiconductor device of claim 1, wherein the first and second series of electrode fingers each include first and second electrode portions that are spaced apart from one another, the first electrode portions of the first and second series of electrode fingers forming a first interdigitated pattern and the second -12- Attorney Ref. No. GS₂₄₈ electrode portions of the first and second series of electrode fingers forming a second interdigitated pattern spatially separated from the first interdigitated pattern.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein each of the first plurality of electrodes are hexagonal in shape. -14-
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first plurality of electrodes in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second plurality of electrodes being in electrical contact with the second electrode pad, the first electrode pad being located over the first and second plurality of electrodes.
The semiconductor device of claim 11, wherein each of the first plurality of electrodes are circular in shape.
The semiconductor device of claim 11, wherein at least one electrode in the first plurality of electrodes is rectangular in shape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with interdigitated finger electrodes and overlying anode pad
GaN-based Schottky diode with plurality of discrete electrodes and overlying first electrode pad
Materials described outside the worked examples.
group III nitride semiconductor
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,281,417Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a plan view of a GaN-based Schottky diode that employs interdigitated electrodes. [0010]
FIG. 3 shows a plan view of a GaN-based Schottky diode in which the anode pad is placed over the interdigitated portions of the electrodes. [0011]
FIG. 4 is a partial, cross-sectional view of a GaN-based Schottky diode. [0012]
FIG. 5b shows a plan view of GaN-based Schottky diode with the anode removed so that the underlying finger electrodes are visible. [0014]
FIG. 6 is a cross-sectional view of the diode shown in
FIG. 7 is a cross-sectional view of the diode shown in
FIG. 8 shows a plan view of a GaN-based Schottky diode that employs circular Schottky electrodes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first series of fingers in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second series of fingers being in electrical contact with the second electrode pad, the first and second series of electrode fingers forming an interdigitated pattern and the first electrode pad being located over the first and second series of electrode fingers.
The semiconductor device of claim 1, further comprising a dielectric layer located between the first electrode pad and the second series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is located over a portion of the second series of fingers that does not form the interdigitated pattern with the first series of fingers.
The semiconductor device of claim 1, wherein the second electrode pad is surrounded by the first electrode pad.
The semiconductor device of claim 1, wherein the first and second series of electrode fingers each include first and second electrode portions that are spaced apart from one another, the first electrode portions of the first and second series of electrode fingers forming a first interdigitated pattern and the second -12- Attorney Ref. No. GS₂₄₈ electrode portions of the first and second series of electrode fingers forming a second interdigitated pattern spatially separated from the first interdigitated pattern.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein each of the first plurality of electrodes are hexagonal in shape. -14-
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode establishing a Schottky junction with the second active layer, the first electrode including a first electrode pad and a first plurality of electrodes in electrical contact with the first electrode pad; and a second electrode establishing an ohmic junction with the first active layer, the second electrode including a second electrode pad and a second plurality of electrodes being in electrical contact with the second electrode pad, the first electrode pad being located over the first and second plurality of electrodes.
The semiconductor device of claim 11, wherein each of the first plurality of electrodes are circular in shape.
The semiconductor device of claim 11, wherein at least one electrode in the first plurality of electrodes is rectangular in shape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with interdigitated finger electrodes and overlying anode pad
GaN-based Schottky diode with plurality of discrete electrodes and overlying first electrode pad
Materials described outside the worked examples.
group III nitride semiconductor
GaN
Related documents with shared materials, methods, properties, or citations.
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