Patent
US 8,981,528GaN-BASED SCHOTTKY DIODE HAVING PARTIALLY RECESSED ANODE
Yih-Yin Lin
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,981,528Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
FIG. 3 shows a simulation of the reverse I -V curves for the conventional AlGaN/GaN Schottky diode and the fully recessed Schottky diode. As shown, when a …
FIG. 4. Although at higher biases the forward current curves for the conventional and partially recessed Schottky diodes almost merge with one another, the …
FIG. 5, the recessed portion 260 1 of the anode 260 may have a stepped configuration in which different segments are located at increasing depths within the …
FIG. 6 shows another illustrative configuration of the partially recessed anode 260. In this example the partially recessed anode has a "T-shaped" configuration …
FIG. 7 shows a simulation of the forward I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 8 shows a simulation of the reverse I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 9 is a flowchart showing one example of a method for forming a semiconductor device. The method includes forming a first active layer on a substrate at …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode having a first portion disposed in a recess in the second active layer, such that said second active layer is completely removed below the first portion of the first electrode,and a second portion disposed directly on the second active layer such that a Schottky junction is formed therewith; and a second electrode in contact with the first active layer, said second electrode establishing an ohmic junction with the first active layer.
The semiconductor device of claim 1 wherein the first portion of the first electrode is in contact with the two-dimensional electron gas.
The semiconductor device of claim 1 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The semiconductor device of claim 1 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portionof the first electrode is disposed between the firstand second segments of the first electrode. 2 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818
The semiconductor device of claim 1 in which the first portion of the first electrode has a surface area parallel to a plane in which the substrate extends that is smaller than a surface area of the second portion of the first electrode, said surface area of the second portion of the first electrode being parallel to a plane which the substrate extends.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
A method of forming a semiconductor device, comprising: forming a first active layer on a substrate; forming a second active layer over the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; forming a first electrode on the second active layer such that a Schottky junction is formed therewith, the first electrode having a first portionwherein the second active layer has been completely removed beneath the first portion, such that the first portion isin contact with the two-dimensional gasand a second portion disposed directly on the second active layer; and 3 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818 forming a second electrode on the first active layer to form an ohmic junction therewith.
The method of claim 12 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The method of claim 12 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portion of the first electrode is disposed between the first and second segments of the first electrode.
The method of claim 12 in which the first parallel to a plane in which the substrate extends portion of the first electrode, said surface area of parallel to a plane which the substrate extends.
The method of claim 12, wherein the first active semiconductor material.
The method of claim 12, wherein the second semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with partially recessed anode
Materials described outside the worked examples.
group III nitride semiconductor (first active layer)
group III nitride semiconductor (second active layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,528Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
FIG. 3 shows a simulation of the reverse I -V curves for the conventional AlGaN/GaN Schottky diode and the fully recessed Schottky diode. As shown, when a …
FIG. 4. Although at higher biases the forward current curves for the conventional and partially recessed Schottky diodes almost merge with one another, the …
FIG. 5, the recessed portion 260 1 of the anode 260 may have a stepped configuration in which different segments are located at increasing depths within the …
FIG. 6 shows another illustrative configuration of the partially recessed anode 260. In this example the partially recessed anode has a "T-shaped" configuration …
FIG. 7 shows a simulation of the forward I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 8 shows a simulation of the reverse I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 9 is a flowchart showing one example of a method for forming a semiconductor device. The method includes forming a first active layer on a substrate at …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode having a first portion disposed in a recess in the second active layer, such that said second active layer is completely removed below the first portion of the first electrode,and a second portion disposed directly on the second active layer such that a Schottky junction is formed therewith; and a second electrode in contact with the first active layer, said second electrode establishing an ohmic junction with the first active layer.
The semiconductor device of claim 1 wherein the first portion of the first electrode is in contact with the two-dimensional electron gas.
The semiconductor device of claim 1 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The semiconductor device of claim 1 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portionof the first electrode is disposed between the firstand second segments of the first electrode. 2 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818
The semiconductor device of claim 1 in which the first portion of the first electrode has a surface area parallel to a plane in which the substrate extends that is smaller than a surface area of the second portion of the first electrode, said surface area of the second portion of the first electrode being parallel to a plane which the substrate extends.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
A method of forming a semiconductor device, comprising: forming a first active layer on a substrate; forming a second active layer over the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; forming a first electrode on the second active layer such that a Schottky junction is formed therewith, the first electrode having a first portionwherein the second active layer has been completely removed beneath the first portion, such that the first portion isin contact with the two-dimensional gasand a second portion disposed directly on the second active layer; and 3 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818 forming a second electrode on the first active layer to form an ohmic junction therewith.
The method of claim 12 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The method of claim 12 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portion of the first electrode is disposed between the first and second segments of the first electrode.
The method of claim 12 in which the first parallel to a plane in which the substrate extends portion of the first electrode, said surface area of parallel to a plane which the substrate extends.
The method of claim 12, wherein the first active semiconductor material.
The method of claim 12, wherein the second semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with partially recessed anode
Materials described outside the worked examples.
group III nitride semiconductor (first active layer)
group III nitride semiconductor (second active layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,528Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
FIG. 3 shows a simulation of the reverse I -V curves for the conventional AlGaN/GaN Schottky diode and the fully recessed Schottky diode. As shown, when a …
FIG. 4. Although at higher biases the forward current curves for the conventional and partially recessed Schottky diodes almost merge with one another, the …
FIG. 5, the recessed portion 260 1 of the anode 260 may have a stepped configuration in which different segments are located at increasing depths within the …
FIG. 6 shows another illustrative configuration of the partially recessed anode 260. In this example the partially recessed anode has a "T-shaped" configuration …
FIG. 7 shows a simulation of the forward I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 8 shows a simulation of the reverse I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 9 is a flowchart showing one example of a method for forming a semiconductor device. The method includes forming a first active layer on a substrate at …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode having a first portion disposed in a recess in the second active layer, such that said second active layer is completely removed below the first portion of the first electrode,and a second portion disposed directly on the second active layer such that a Schottky junction is formed therewith; and a second electrode in contact with the first active layer, said second electrode establishing an ohmic junction with the first active layer.
The semiconductor device of claim 1 wherein the first portion of the first electrode is in contact with the two-dimensional electron gas.
The semiconductor device of claim 1 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The semiconductor device of claim 1 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portionof the first electrode is disposed between the firstand second segments of the first electrode. 2 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818
The semiconductor device of claim 1 in which the first portion of the first electrode has a surface area parallel to a plane in which the substrate extends that is smaller than a surface area of the second portion of the first electrode, said surface area of the second portion of the first electrode being parallel to a plane which the substrate extends.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
A method of forming a semiconductor device, comprising: forming a first active layer on a substrate; forming a second active layer over the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; forming a first electrode on the second active layer such that a Schottky junction is formed therewith, the first electrode having a first portionwherein the second active layer has been completely removed beneath the first portion, such that the first portion isin contact with the two-dimensional gasand a second portion disposed directly on the second active layer; and 3 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818 forming a second electrode on the first active layer to form an ohmic junction therewith.
The method of claim 12 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The method of claim 12 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portion of the first electrode is disposed between the first and second segments of the first electrode.
The method of claim 12 in which the first parallel to a plane in which the substrate extends portion of the first electrode, said surface area of parallel to a plane which the substrate extends.
The method of claim 12, wherein the first active semiconductor material.
The method of claim 12, wherein the second semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with partially recessed anode
Materials described outside the worked examples.
group III nitride semiconductor (first active layer)
group III nitride semiconductor (second active layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,528Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows an example of a GaN-based Schottky diode. [0009]
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
FIG. 3 shows a simulation of the reverse I -V curves for the conventional AlGaN/GaN Schottky diode and the fully recessed Schottky diode. As shown, when a …
FIG. 4. Although at higher biases the forward current curves for the conventional and partially recessed Schottky diodes almost merge with one another, the …
FIG. 5, the recessed portion 260 1 of the anode 260 may have a stepped configuration in which different segments are located at increasing depths within the …
FIG. 6 shows another illustrative configuration of the partially recessed anode 260. In this example the partially recessed anode has a "T-shaped" configuration …
FIG. 7 shows a simulation of the forward I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 8 shows a simulation of the reverse I -V curves for a conventional AlGaN/GaN Schottky diode, a fully recessed Schottky diode and a partially recessed …
FIG. 9 is a flowchart showing one example of a method for forming a semiconductor device. The method includes forming a first active layer on a substrate at …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode having a first portion disposed in a recess in the second active layer, such that said second active layer is completely removed below the first portion of the first electrode,and a second portion disposed directly on the second active layer such that a Schottky junction is formed therewith; and a second electrode in contact with the first active layer, said second electrode establishing an ohmic junction with the first active layer.
The semiconductor device of claim 1 wherein the first portion of the first electrode is in contact with the two-dimensional electron gas.
The semiconductor device of claim 1 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The semiconductor device of claim 1 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portionof the first electrode is disposed between the firstand second segments of the first electrode. 2 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818
The semiconductor device of claim 1 in which the first portion of the first electrode has a surface area parallel to a plane in which the substrate extends that is smaller than a surface area of the second portion of the first electrode, said surface area of the second portion of the first electrode being parallel to a plane which the substrate extends.
The semiconductor device of claim 1, wherein the first active layer comprises a group III nitride semiconductor material.
The semiconductor device of claim 1, wherein the second active layer comprises a group III nitride semiconductor material.
A method of forming a semiconductor device, comprising: forming a first active layer on a substrate; forming a second active layer over the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; forming a first electrode on the second active layer such that a Schottky junction is formed therewith, the first electrode having a first portionwherein the second active layer has been completely removed beneath the first portion, such that the first portion isin contact with the two-dimensional gasand a second portion disposed directly on the second active layer; and 3 Serial No.: 13/678,570 Examiner: Niki Hoang Nguyen Group Art Unit: 2818 forming a second electrode on the first active layer to form an ohmic junction therewith.
The method of claim 12 wherein the first portion of the first electrode comprises a plurality of segments that are each located at a different depth within the recess in the second active layer.
The method of claim 12 in which the second portion of the first electrode disposed on the second active layer comprises first and second segments such that the first portion of the first electrode is disposed between the first and second segments of the first electrode.
The method of claim 12 in which the first parallel to a plane in which the substrate extends portion of the first electrode, said surface area of parallel to a plane which the substrate extends.
The method of claim 12, wherein the first active semiconductor material.
The method of claim 12, wherein the second semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode with partially recessed anode
Materials described outside the worked examples.
group III nitride semiconductor (first active layer)
group III nitride semiconductor (second active layer)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 shows a simulation of the forward current voltage (I-V) curves for a conventional AlGaN/GaN Schottky diode and a Schottky diode which has a fully …
Related documents with shared materials, methods, properties, or citations.
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