1. (curr e ntly a mren ded) A semiconductor device, comprising: a die having four sides and four corners, wherein first and second corners are opposed and third and fourth corners are opposed; first and second electrodes disposed on the die at locations corresponding respectively to the first and second corners, each of the first a n d second electrodes having a bonding pad, a tapered base, and a plurality of tape re d electrode fingers extending from the tapered base; w here i n the bonding pad of each of t he first and second electrodes is located at a respective first and second corner of the die; wherein the tapered base of each of t he first a n d second electrodes decreases i n width in both directions away from its res p ective corner of the die; wherein the p lurality of tapere d electrode fingers of the first and second electrodes are interdigitated and o rieted parallel to an axis defin ed b yt he f irst and secon d co rners af the die; and a c onduct iv e channel between the interdigitated taper ed electrode fingers of the first and second electrodes.

(cancelled) Canceled

6. (currentl y amern ded) The semiconductor device of c laim 1, wherein each finger of the plurality of tape red e l ectrode f ingers has a base where it extends from an electrode and a tip, and each tape red ele ctrod e finger is wider at the b ase than at the tip,

7. The semiconductor device of clai m 1, wherein the semicondu ct or device is a diode, wherein the first and second e l ectrodes are an anode and a cathode of the diode. Original

The semiconductor device matrix of clai m 16, wherein the plurality of identical or similar semiconductor dies are mounted to one side of the circuit b oard. Original

The semiconductor device matrix of clai m 19. wherein the plurality of identica l or similar semiconductor dies are mounted to o n e side of e ach of the two or more circuit boards. Original

The semiconductor device matrix of c laim 19, wherein the pluralit y of identical or similar se m iconductor dies are mounted to both sides of

22, (original) The semiconductor device matrix identica i or similar semiconductor dies are flip-chip circuit b oard. Original

(ori g inal) The semiconductor device matrix wherein the plurality of identical or si m ilar a source o f the MOSFET is connected to gates of each of the two or more circuit boards, Original of clai m 11, wherein the p l urality of mounted or w ire bond mounted o n the of c i aim 11, further comprising a MOSFET; semiconductor die s comprise Ga N HEMTs; wherein the Ga N HEMTs, Original

1. (curr e ntly a mren ded) A semiconductor device, comprising: a die having four sides and four corners, wherein first and second corners are opposed and third and fourth corners are opposed; first and second electrodes disposed on the die at locations corresponding respectively to the first and second corners, each of the first a n d second electrodes having a bonding pad, a tapered base, and a plurality of tape re d electrode fingers extending from the tapered base; w here i n the bonding pad of each of t he first and second electrodes is located at a respective first and second corner of the die; wherein the tapered base of each of t he first a n d second electrodes decreases i n width in both directions away from its res p ective corner of the die; wherein the p lurality of tapere d electrode fingers of the first and second electrodes are interdigitated and o rieted parallel to an axis defin ed b yt he f irst and secon d co rners af the die; and a c onduct iv e channel between the interdigitated taper ed electrode fingers of the first and second electrodes.

(cancelled) Canceled

6. (currentl y amern ded) The semiconductor device of c laim 1, wherein each finger of the plurality of tape red e l ectrode f ingers has a base where it extends from an electrode and a tip, and each tape red ele ctrod e finger is wider at the b ase than at the tip,

7. The semiconductor device of clai m 1, wherein the semicondu ct or device is a diode, wherein the first and second e l ectrodes are an anode and a cathode of the diode. Original

The semiconductor device matrix of clai m 16, wherein the plurality of identical or similar semiconductor dies are mounted to one side of the circuit b oard. Original

The semiconductor device matrix of clai m 19. wherein the plurality of identica l or similar semiconductor dies are mounted to o n e side of e ach of the two or more circuit boards. Original

The semiconductor device matrix of c laim 19, wherein the pluralit y of identical or similar se m iconductor dies are mounted to both sides of

22, (original) The semiconductor device matrix identica i or similar semiconductor dies are flip-chip circuit b oard. Original

(ori g inal) The semiconductor device matrix wherein the plurality of identical or si m ilar a source o f the MOSFET is connected to gates of each of the two or more circuit boards, Original of clai m 11, wherein the p l urality of mounted or w ire bond mounted o n the of c i aim 11, further comprising a MOSFET; semiconductor die s comprise Ga N HEMTs; wherein the Ga N HEMTs, Original

1. (curr e ntly a mren ded) A semiconductor device, comprising: a die having four sides and four corners, wherein first and second corners are opposed and third and fourth corners are opposed; first and second electrodes disposed on the die at locations corresponding respectively to the first and second corners, each of the first a n d second electrodes having a bonding pad, a tapered base, and a plurality of tape re d electrode fingers extending from the tapered base; w here i n the bonding pad of each of t he first and second electrodes is located at a respective first and second corner of the die; wherein the tapered base of each of t he first a n d second electrodes decreases i n width in both directions away from its res p ective corner of the die; wherein the p lurality of tapere d electrode fingers of the first and second electrodes are interdigitated and o rieted parallel to an axis defin ed b yt he f irst and secon d co rners af the die; and a c onduct iv e channel between the interdigitated taper ed electrode fingers of the first and second electrodes.

(cancelled) Canceled

6. (currentl y amern ded) The semiconductor device of c laim 1, wherein each finger of the plurality of tape red e l ectrode f ingers has a base where it extends from an electrode and a tip, and each tape red ele ctrod e finger is wider at the b ase than at the tip,

7. The semiconductor device of clai m 1, wherein the semicondu ct or device is a diode, wherein the first and second e l ectrodes are an anode and a cathode of the diode. Original

The semiconductor device matrix of clai m 16, wherein the plurality of identical or similar semiconductor dies are mounted to one side of the circuit b oard. Original

The semiconductor device matrix of clai m 19. wherein the plurality of identica l or similar semiconductor dies are mounted to o n e side of e ach of the two or more circuit boards. Original

The semiconductor device matrix of c laim 19, wherein the pluralit y of identical or similar se m iconductor dies are mounted to both sides of

22, (original) The semiconductor device matrix identica i or similar semiconductor dies are flip-chip circuit b oard. Original

(ori g inal) The semiconductor device matrix wherein the plurality of identical or si m ilar a source o f the MOSFET is connected to gates of each of the two or more circuit boards, Original of clai m 11, wherein the p l urality of mounted or w ire bond mounted o n the of c i aim 11, further comprising a MOSFET; semiconductor die s comprise Ga N HEMTs; wherein the Ga N HEMTs, Original

1. (curr e ntly a mren ded) A semiconductor device, comprising: a die having four sides and four corners, wherein first and second corners are opposed and third and fourth corners are opposed; first and second electrodes disposed on the die at locations corresponding respectively to the first and second corners, each of the first a n d second electrodes having a bonding pad, a tapered base, and a plurality of tape re d electrode fingers extending from the tapered base; w here i n the bonding pad of each of t he first and second electrodes is located at a respective first and second corner of the die; wherein the tapered base of each of t he first a n d second electrodes decreases i n width in both directions away from its res p ective corner of the die; wherein the p lurality of tapere d electrode fingers of the first and second electrodes are interdigitated and o rieted parallel to an axis defin ed b yt he f irst and secon d co rners af the die; and a c onduct iv e channel between the interdigitated taper ed electrode fingers of the first and second electrodes.

(cancelled) Canceled

6. (currentl y amern ded) The semiconductor device of c laim 1, wherein each finger of the plurality of tape red e l ectrode f ingers has a base where it extends from an electrode and a tip, and each tape red ele ctrod e finger is wider at the b ase than at the tip,

7. The semiconductor device of clai m 1, wherein the semicondu ct or device is a diode, wherein the first and second e l ectrodes are an anode and a cathode of the diode. Original

The semiconductor device matrix of clai m 16, wherein the plurality of identical or similar semiconductor dies are mounted to one side of the circuit b oard. Original

The semiconductor device matrix of clai m 19. wherein the plurality of identica l or similar semiconductor dies are mounted to o n e side of e ach of the two or more circuit boards. Original

The semiconductor device matrix of c laim 19, wherein the pluralit y of identical or similar se m iconductor dies are mounted to both sides of

22, (original) The semiconductor device matrix identica i or similar semiconductor dies are flip-chip circuit b oard. Original

(ori g inal) The semiconductor device matrix wherein the plurality of identical or si m ilar a source o f the MOSFET is connected to gates of each of the two or more circuit boards, Original of clai m 11, wherein the p l urality of mounted or w ire bond mounted o n the of c i aim 11, further comprising a MOSFET; semiconductor die s comprise Ga N HEMTs; wherein the Ga N HEMTs, Original