Patent
US 8,648,350Gallium nitride-based compound semiconductor light-emitting element
Ryou KATO
US
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Patent
Atlas literature
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US 8,648,350Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating the unit cell of GaN.
FIG. 2 is a perspective view illustrating fundamental vectors, a 1, a2, a 3, and c of a wurtzite crystal structure.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIGS. 5(a) and 5(b) are graphs showing SIMS analysis results of LED samples.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
FIG. 10 C is a sectional view illustrating another modification example of the gallium nitride- based compound semiconductor light-emitting element according to …
FIG. 11(a) is a diagram schematically illustrating the crystal structure (wurtzite crystal structure) of a GaN-based compound semiconductor and
FIGS. 12(a) and 12(b) are each a sectional view illustrating the arrangement relation between a principal surface of a GaN-based compound semiconductor layer …
FIGS. 13(a) and 13(b) are each a sectional view schematically illustrating a principal surface of a p-type GaN-based compound semiconductor layer 8 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
P₅₉₅₇₁₈-03 B010 7MT-US 1 CLAIMS 1. A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a G aN layer, wherein the p-type gallium nitride-based compound 67 P₅₉₅₇₁₈-03 B010 7MT-US 1 semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x1018 cmn3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0 x1018 cm 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the p-type overflow suppressing layer is doped with Mg at a concentration of 1. 0x101 8 c m 3 or more and 9. 0x1018 cm 3 or less.
The gallium nitride-based compound semiconductor 68 P₅₉₅₇₁₈-03 B010 7MT-US 1 light-emitting element of claim 1, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 nm or less from the active layer has an Mg concentration of 1.0 x1018 cm 3 or more and 9.0 x10'8 cm- 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, further comprising an undoped spacer layer, which is interposed between the active layer and the p-type overflow suppressing layer.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the active layer and the p-type overflow suppressing layer are in contact with each other.
A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; 69 P₅₉₅₇₁₈-03 B0107 MT-US 1 a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the active layer and the p-type gallium nitride- based compound semiconductor layer are in contact with each other, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x10 18 cm, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 70 P₅₉₅₇ 1 8-03 B010 7MT-US 1 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x10 18 cm- 3 or more and 9.0x1018 c m 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 6, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 n m or less from the active layer has an Mg concentration of 2.0 x101 cm- 3 or more and 8.0x1018 cm- 3 or less.
A method of manufacturing a gallium nitride-based compound semiconductor light-emitting element, comprising: a step (A) of forming an n-type gallium nitride-based comp o und semiconductor layer; a step (B) of forming an active layer on the n-type gallium nitride-based compound semiconductor layer; a step (C) of forming a p-type gallium nitride-based compound semiconductor layer which is a Ga N layer in a manner 71 P₅₉₅₇₁ 8 -03 B010 7MT-US 1 that brings the p-type gallium nitride-based compound semiconductor layer into contact with the active layer or with a p-type overflow suppressing layer; and a step (D) of forming a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the step (C) comprises: a step (Cl) of growing the p-type gallium nitride- based compound semiconductor layer by m -plane growth and providing the p-type electrode side of the p-type gallium nitride-based compound semiconductor layer with a heavily doped region, which has a thickness of 10 nm or more and 100 nm or less; and a step (C₂) of providing other regions than the heavily doped region, wherein the step (Cl) comprises doping with Mg at a concentration higher than 9. 0x10 cm 3, and wherein the step (C₂) comprises doping with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0x108 cm -3 or less.
P₅₉₅₇₁₈-03 B010 7MT-US I 9. A gallium nitride-based compound semiconductor light-emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a semiconductor layer that is inclined at an angle of 1 * or more from an m -plane, and an angle formed between a normal line of a principal surface of the p-type gallium nitride-based compound semiconductor layer and a normal line of the m -plane is 1 0 or more and 5 4 or 73 P₅₉₅₇₁₈-03 B010 7MT-US 1 less, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the p-type gallium nitride-based compound semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9. 0x101 cmf3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x101 8 c m 3 or more and 9.0 x108 cm⁻³ or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with overflow suppressing layer (m-plane)
GaN-based LED without overflow suppressing layer (m-plane, active layer in contact with p-GaN)
Materials described outside the worked examples.
n-type gallium nitride-based compound semiconductor
AlxGayInzN
p-type gallium nitride-based compound semiconductor (GaN layer, m-plane)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mg concentration in heavily doped region of p-GaN (m-plane) layer | ≥ 9000000000000000000 cm⁻³ | GaN |
Mg concentration in other regions of p-GaN (m-plane) layer | 1000000000000000000–9000000000000000000 cm⁻³ |
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US 8,648,350Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating the unit cell of GaN.
FIG. 2 is a perspective view illustrating fundamental vectors, a 1, a2, a 3, and c of a wurtzite crystal structure.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIGS. 5(a) and 5(b) are graphs showing SIMS analysis results of LED samples.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
FIG. 10 C is a sectional view illustrating another modification example of the gallium nitride- based compound semiconductor light-emitting element according to …
FIG. 11(a) is a diagram schematically illustrating the crystal structure (wurtzite crystal structure) of a GaN-based compound semiconductor and
FIGS. 12(a) and 12(b) are each a sectional view illustrating the arrangement relation between a principal surface of a GaN-based compound semiconductor layer …
FIGS. 13(a) and 13(b) are each a sectional view schematically illustrating a principal surface of a p-type GaN-based compound semiconductor layer 8 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
P₅₉₅₇₁₈-03 B010 7MT-US 1 CLAIMS 1. A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a G aN layer, wherein the p-type gallium nitride-based compound 67 P₅₉₅₇₁₈-03 B010 7MT-US 1 semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x1018 cmn3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0 x1018 cm 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the p-type overflow suppressing layer is doped with Mg at a concentration of 1. 0x101 8 c m 3 or more and 9. 0x1018 cm 3 or less.
The gallium nitride-based compound semiconductor 68 P₅₉₅₇₁₈-03 B010 7MT-US 1 light-emitting element of claim 1, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 nm or less from the active layer has an Mg concentration of 1.0 x1018 cm 3 or more and 9.0 x10'8 cm- 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, further comprising an undoped spacer layer, which is interposed between the active layer and the p-type overflow suppressing layer.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the active layer and the p-type overflow suppressing layer are in contact with each other.
A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; 69 P₅₉₅₇₁₈-03 B0107 MT-US 1 a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the active layer and the p-type gallium nitride- based compound semiconductor layer are in contact with each other, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x10 18 cm, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 70 P₅₉₅₇ 1 8-03 B010 7MT-US 1 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x10 18 cm- 3 or more and 9.0x1018 c m 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 6, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 n m or less from the active layer has an Mg concentration of 2.0 x101 cm- 3 or more and 8.0x1018 cm- 3 or less.
A method of manufacturing a gallium nitride-based compound semiconductor light-emitting element, comprising: a step (A) of forming an n-type gallium nitride-based comp o und semiconductor layer; a step (B) of forming an active layer on the n-type gallium nitride-based compound semiconductor layer; a step (C) of forming a p-type gallium nitride-based compound semiconductor layer which is a Ga N layer in a manner 71 P₅₉₅₇₁ 8 -03 B010 7MT-US 1 that brings the p-type gallium nitride-based compound semiconductor layer into contact with the active layer or with a p-type overflow suppressing layer; and a step (D) of forming a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the step (C) comprises: a step (Cl) of growing the p-type gallium nitride- based compound semiconductor layer by m -plane growth and providing the p-type electrode side of the p-type gallium nitride-based compound semiconductor layer with a heavily doped region, which has a thickness of 10 nm or more and 100 nm or less; and a step (C₂) of providing other regions than the heavily doped region, wherein the step (Cl) comprises doping with Mg at a concentration higher than 9. 0x10 cm 3, and wherein the step (C₂) comprises doping with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0x108 cm -3 or less.
P₅₉₅₇₁₈-03 B010 7MT-US I 9. A gallium nitride-based compound semiconductor light-emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a semiconductor layer that is inclined at an angle of 1 * or more from an m -plane, and an angle formed between a normal line of a principal surface of the p-type gallium nitride-based compound semiconductor layer and a normal line of the m -plane is 1 0 or more and 5 4 or 73 P₅₉₅₇₁₈-03 B010 7MT-US 1 less, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the p-type gallium nitride-based compound semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9. 0x101 cmf3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x101 8 c m 3 or more and 9.0 x108 cm⁻³ or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with overflow suppressing layer (m-plane)
GaN-based LED without overflow suppressing layer (m-plane, active layer in contact with p-GaN)
Materials described outside the worked examples.
n-type gallium nitride-based compound semiconductor
AlxGayInzN
p-type gallium nitride-based compound semiconductor (GaN layer, m-plane)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mg concentration in heavily doped region of p-GaN (m-plane) layer | ≥ 9000000000000000000 cm⁻³ | GaN |
Mg concentration in other regions of p-GaN (m-plane) layer | 1000000000000000000–9000000000000000000 cm⁻³ |
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US 8,648,350Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating the unit cell of GaN.
FIG. 2 is a perspective view illustrating fundamental vectors, a 1, a2, a 3, and c of a wurtzite crystal structure.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIGS. 5(a) and 5(b) are graphs showing SIMS analysis results of LED samples.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
FIG. 10 C is a sectional view illustrating another modification example of the gallium nitride- based compound semiconductor light-emitting element according to …
FIG. 11(a) is a diagram schematically illustrating the crystal structure (wurtzite crystal structure) of a GaN-based compound semiconductor and
FIGS. 12(a) and 12(b) are each a sectional view illustrating the arrangement relation between a principal surface of a GaN-based compound semiconductor layer …
FIGS. 13(a) and 13(b) are each a sectional view schematically illustrating a principal surface of a p-type GaN-based compound semiconductor layer 8 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
P₅₉₅₇₁₈-03 B010 7MT-US 1 CLAIMS 1. A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a G aN layer, wherein the p-type gallium nitride-based compound 67 P₅₉₅₇₁₈-03 B010 7MT-US 1 semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x1018 cmn3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0 x1018 cm 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the p-type overflow suppressing layer is doped with Mg at a concentration of 1. 0x101 8 c m 3 or more and 9. 0x1018 cm 3 or less.
The gallium nitride-based compound semiconductor 68 P₅₉₅₇₁₈-03 B010 7MT-US 1 light-emitting element of claim 1, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 nm or less from the active layer has an Mg concentration of 1.0 x1018 cm 3 or more and 9.0 x10'8 cm- 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, further comprising an undoped spacer layer, which is interposed between the active layer and the p-type overflow suppressing layer.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the active layer and the p-type overflow suppressing layer are in contact with each other.
A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; 69 P₅₉₅₇₁₈-03 B0107 MT-US 1 a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the active layer and the p-type gallium nitride- based compound semiconductor layer are in contact with each other, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x10 18 cm, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 70 P₅₉₅₇ 1 8-03 B010 7MT-US 1 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x10 18 cm- 3 or more and 9.0x1018 c m 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 6, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 n m or less from the active layer has an Mg concentration of 2.0 x101 cm- 3 or more and 8.0x1018 cm- 3 or less.
A method of manufacturing a gallium nitride-based compound semiconductor light-emitting element, comprising: a step (A) of forming an n-type gallium nitride-based comp o und semiconductor layer; a step (B) of forming an active layer on the n-type gallium nitride-based compound semiconductor layer; a step (C) of forming a p-type gallium nitride-based compound semiconductor layer which is a Ga N layer in a manner 71 P₅₉₅₇₁ 8 -03 B010 7MT-US 1 that brings the p-type gallium nitride-based compound semiconductor layer into contact with the active layer or with a p-type overflow suppressing layer; and a step (D) of forming a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the step (C) comprises: a step (Cl) of growing the p-type gallium nitride- based compound semiconductor layer by m -plane growth and providing the p-type electrode side of the p-type gallium nitride-based compound semiconductor layer with a heavily doped region, which has a thickness of 10 nm or more and 100 nm or less; and a step (C₂) of providing other regions than the heavily doped region, wherein the step (Cl) comprises doping with Mg at a concentration higher than 9. 0x10 cm 3, and wherein the step (C₂) comprises doping with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0x108 cm -3 or less.
P₅₉₅₇₁₈-03 B010 7MT-US I 9. A gallium nitride-based compound semiconductor light-emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a semiconductor layer that is inclined at an angle of 1 * or more from an m -plane, and an angle formed between a normal line of a principal surface of the p-type gallium nitride-based compound semiconductor layer and a normal line of the m -plane is 1 0 or more and 5 4 or 73 P₅₉₅₇₁₈-03 B010 7MT-US 1 less, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the p-type gallium nitride-based compound semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9. 0x101 cmf3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x101 8 c m 3 or more and 9.0 x108 cm⁻³ or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with overflow suppressing layer (m-plane)
GaN-based LED without overflow suppressing layer (m-plane, active layer in contact with p-GaN)
Materials described outside the worked examples.
n-type gallium nitride-based compound semiconductor
AlxGayInzN
p-type gallium nitride-based compound semiconductor (GaN layer, m-plane)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mg concentration in heavily doped region of p-GaN (m-plane) layer | ≥ 9000000000000000000 cm⁻³ | GaN |
Mg concentration in other regions of p-GaN (m-plane) layer | 1000000000000000000–9000000000000000000 cm⁻³ |
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US 8,648,350Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating the unit cell of GaN.
FIG. 2 is a perspective view illustrating fundamental vectors, a 1, a2, a 3, and c of a wurtzite crystal structure.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIGS. 5(a) and 5(b) are graphs showing SIMS analysis results of LED samples.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
FIG. 10 C is a sectional view illustrating another modification example of the gallium nitride- based compound semiconductor light-emitting element according to …
FIG. 11(a) is a diagram schematically illustrating the crystal structure (wurtzite crystal structure) of a GaN-based compound semiconductor and
FIGS. 12(a) and 12(b) are each a sectional view illustrating the arrangement relation between a principal surface of a GaN-based compound semiconductor layer …
FIGS. 13(a) and 13(b) are each a sectional view schematically illustrating a principal surface of a p-type GaN-based compound semiconductor layer 8 and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
P₅₉₅₇₁₈-03 B010 7MT-US 1 CLAIMS 1. A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a G aN layer, wherein the p-type gallium nitride-based compound 67 P₅₉₅₇₁₈-03 B010 7MT-US 1 semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x1018 cmn3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0 x1018 cm 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the p-type overflow suppressing layer is doped with Mg at a concentration of 1. 0x101 8 c m 3 or more and 9. 0x1018 cm 3 or less.
The gallium nitride-based compound semiconductor 68 P₅₉₅₇₁₈-03 B010 7MT-US 1 light-emitting element of claim 1, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 nm or less from the active layer has an Mg concentration of 1.0 x1018 cm 3 or more and 9.0 x10'8 cm- 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, further comprising an undoped spacer layer, which is interposed between the active layer and the p-type overflow suppressing layer.
The gallium nitride-based compound semiconductor light-emitting element of claim 1, wherein the active layer and the p-type overflow suppressing layer are in contact with each other.
A gallium nitride-based compound semiconductor light- emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; 69 P₅₉₅₇₁₈-03 B0107 MT-US 1 a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises an m -plane semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the active layer and the p-type gallium nitride- based compound semiconductor layer are in contact with each other, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9.0x10 18 cm, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 70 P₅₉₅₇ 1 8-03 B010 7MT-US 1 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x10 18 cm- 3 or more and 9.0x1018 c m 3 or less.
The gallium nitride-based compound semiconductor light-emitting element of claim 6, wherein a portion of the p-type gallium nitride-based compound semiconductor layer that is at a distance of 45 n m or less from the active layer has an Mg concentration of 2.0 x101 cm- 3 or more and 8.0x1018 cm- 3 or less.
A method of manufacturing a gallium nitride-based compound semiconductor light-emitting element, comprising: a step (A) of forming an n-type gallium nitride-based comp o und semiconductor layer; a step (B) of forming an active layer on the n-type gallium nitride-based compound semiconductor layer; a step (C) of forming a p-type gallium nitride-based compound semiconductor layer which is a Ga N layer in a manner 71 P₅₉₅₇₁ 8 -03 B010 7MT-US 1 that brings the p-type gallium nitride-based compound semiconductor layer into contact with the active layer or with a p-type overflow suppressing layer; and a step (D) of forming a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the step (C) comprises: a step (Cl) of growing the p-type gallium nitride- based compound semiconductor layer by m -plane growth and providing the p-type electrode side of the p-type gallium nitride-based compound semiconductor layer with a heavily doped region, which has a thickness of 10 nm or more and 100 nm or less; and a step (C₂) of providing other regions than the heavily doped region, wherein the step (Cl) comprises doping with Mg at a concentration higher than 9. 0x10 cm 3, and wherein the step (C₂) comprises doping with Mg at a concentration of 1.0x1018 cm 3 or more and 9. 0x108 cm -3 or less.
P₅₉₅₇₁₈-03 B010 7MT-US I 9. A gallium nitride-based compound semiconductor light-emitting element, comprising: an n-type gallium nitride-based compound semiconductor layer; a p-type gallium nitride-based compound semiconductor layer; an active layer, which is located between the n-type gallium nitride-based compound semiconductor layer and the p- type gallium nitride-based compound semiconductor layer; a p-type overflow suppressing layer, which is located between the p-type gallium nitride-based compound semiconductor layer and the active layer; and a p-type electrode, which is in contact with the p-type gallium nitride-based compound semiconductor layer, wherein the p-type gallium nitride-based compound semiconductor layer comprises a semiconductor layer that is inclined at an angle of 1 * or more from an m -plane, and an angle formed between a normal line of a principal surface of the p-type gallium nitride-based compound semiconductor layer and a normal line of the m -plane is 1 0 or more and 5 4 or 73 P₅₉₅₇₁₈-03 B010 7MT-US 1 less, wherein the p-type gallium nitride-based compound semiconductor layer comprises a GaN layer, wherein the p-type gallium nitride-based compound semiconductor layer is in contact with the p-type overflow suppressing layer, wherein the p-type gallium nitride-based compound semiconductor layer includes a heavily doped region, which is doped with Mg at a concentration higher than 9. 0x101 cmf3, and other regions than the heavily doped region, wherein the heavily doped region is provided on the p- type electrode side to have a thickness of 10 nm or more and 100 nm or less, and wherein the other regions than the heavily doped region are doped with Mg at a concentration of 1.0x101 8 c m 3 or more and 9.0 x108 cm⁻³ or less.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with overflow suppressing layer (m-plane)
GaN-based LED without overflow suppressing layer (m-plane, active layer in contact with p-GaN)
Materials described outside the worked examples.
n-type gallium nitride-based compound semiconductor
AlxGayInzN
p-type gallium nitride-based compound semiconductor (GaN layer, m-plane)
GaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mg concentration in heavily doped region of p-GaN (m-plane) layer | ≥ 9000000000000000000 cm⁻³ | GaN |
Mg concentration in other regions of p-GaN (m-plane) layer | 1000000000000000000–9000000000000000000 cm⁻³ |
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GaN-based LED with overflow suppressing layer (semi-polar/near-m-plane, inclined 1-54 degrees from m-plane)
p-type overflow suppressing layer
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FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
GaN |
Mg concentration in p-type overflow suppressing layer (claim 2) | 1000000000000000000–9000000000000000000 cm⁻³ | p-type overflow suppressing layer |
Thickness | 50–800 nm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 10 nm | — |
Voltage | ≤ 0.1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 45 nm | — |
GaN-based LED with overflow suppressing layer (semi-polar/near-m-plane, inclined 1-54 degrees from m-plane)
p-type overflow suppressing layer
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FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
GaN |
Mg concentration in p-type overflow suppressing layer (claim 2) | 1000000000000000000–9000000000000000000 cm⁻³ | p-type overflow suppressing layer |
Thickness | 50–800 nm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 10 nm | — |
Voltage | ≤ 0.1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 45 nm | — |
GaN-based LED with overflow suppressing layer (semi-polar/near-m-plane, inclined 1-54 degrees from m-plane)
p-type overflow suppressing layer
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FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
GaN |
Mg concentration in p-type overflow suppressing layer (claim 2) | 1000000000000000000–9000000000000000000 cm⁻³ | p-type overflow suppressing layer |
Thickness | 50–800 nm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 10 nm | — |
Voltage | ≤ 0.1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 45 nm | — |
GaN-based LED with overflow suppressing layer (semi-polar/near-m-plane, inclined 1-54 degrees from m-plane)
p-type overflow suppressing layer
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FIG. 3B is a graph showing a relation between the Mg concentration in a p-GaN layer and the hole concentration.
FIG. 4 is a graph showing a relation between the Mg concentration in a p-GaN layer and the resistivity.
FIG. 6 is a graph showing a relation between the growth 20 P₅₉₅₇₁₈-03 B010 7MT-US₁ time of a p-GaN layer and the penetration length of the diffusion of Mg atoms.
FIG. 7B is a graph showing a relation between the Mg concentration and the penetration length of diffusion that is observed when the growth temperature of a p- …
FIG. 8 is a graph showing the current-voltage characteristics of LED samples whose p- G aN layers have different Mg concentrations.
FIG. 9A is a graph showing two different emission spectra that are observed when the Mg concentration of a p-GaN layer is varied.
GaN |
Mg concentration in p-type overflow suppressing layer (claim 2) | 1000000000000000000–9000000000000000000 cm⁻³ | p-type overflow suppressing layer |
Thickness | 50–800 nm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 10 nm | — |
Voltage | ≤ 0.1 V | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 45 nm | — |