Patent
FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE
Jack O. Chu
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer having a hexagonal …
FIG. 3 is a vertical cross-sectional view of a second exemplary structure including a single crystalline semiconductor-carbon alloy layer having a cubic …
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 16 is a vertical cross-sectional view of a third exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 17 is a vertical cross-sectional view of a fourth exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 19 is a vertical cross-sectional view of a fifth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 20 is a vertical cross-sectional view of a sixth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 22 is a vertical cross-sectional view of a seventh exemplary structure including a sapphire substrate and a graphene layer deposited thereupon. [0040]
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIG. 25 is a vertical cross-sectional view of an eighth exemplary structure including a silicon carbide substrate and a graphene layer deposited thereupon. …
FIG. 26 is a vertical cross-sectional view of a ninth exemplary structure including an underlying semiconductor substrate, a silicon carbide substrate, and a …
FIG. 27B is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
canceled
canceled
canceled
canceled
A structure comprising a graphene layer located on a (110) surface of a single crystalline semiconductor-carbon alloy layer that is located on and epitaxially aligned to a (1102) surface of a single crystalline sapphire substrate, wherein said single crystalline semiconductor-carbon alloy laver is a superlattice including multiple repetitions laver, wherein at least one of the first material carbon, and at least one of the first material layer one of silicon and germanium.
- 8. canceled
canceled
- 10. canceled
canceled
-15. canceled
canceled
canceled
canceled
canceled
The structure of Claim [[15]]6, wherein the or an alloy of silicon, and the second material layer IBM\ 2683\24972A \ AMEND\24972A.am2.doc of a first material layer and a second material layer and the second material layer comprises and the second material layer comprises at least first material layer comprises silicon, germanium, comprise carbon or a carbon alloy. 2 I.\GF-
Layer stacks claimed or described, ordered top of device to substrate.
graphene on semiconductor-carbon alloy superlattice on sapphire substrate
Materials described outside the worked examples.
graphene
C
single crystalline semiconductor-carbon alloy (superlattice)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer having a hexagonal …
FIG. 3 is a vertical cross-sectional view of a second exemplary structure including a single crystalline semiconductor-carbon alloy layer having a cubic …
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 16 is a vertical cross-sectional view of a third exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 17 is a vertical cross-sectional view of a fourth exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 19 is a vertical cross-sectional view of a fifth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 20 is a vertical cross-sectional view of a sixth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 22 is a vertical cross-sectional view of a seventh exemplary structure including a sapphire substrate and a graphene layer deposited thereupon. [0040]
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIG. 25 is a vertical cross-sectional view of an eighth exemplary structure including a silicon carbide substrate and a graphene layer deposited thereupon. …
FIG. 26 is a vertical cross-sectional view of a ninth exemplary structure including an underlying semiconductor substrate, a silicon carbide substrate, and a …
FIG. 27B is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
canceled
canceled
canceled
canceled
A structure comprising a graphene layer located on a (110) surface of a single crystalline semiconductor-carbon alloy layer that is located on and epitaxially aligned to a (1102) surface of a single crystalline sapphire substrate, wherein said single crystalline semiconductor-carbon alloy laver is a superlattice including multiple repetitions laver, wherein at least one of the first material carbon, and at least one of the first material layer one of silicon and germanium.
- 8. canceled
canceled
- 10. canceled
canceled
-15. canceled
canceled
canceled
canceled
canceled
The structure of Claim [[15]]6, wherein the or an alloy of silicon, and the second material layer IBM\ 2683\24972A \ AMEND\24972A.am2.doc of a first material layer and a second material layer and the second material layer comprises and the second material layer comprises at least first material layer comprises silicon, germanium, comprise carbon or a carbon alloy. 2 I.\GF-
Layer stacks claimed or described, ordered top of device to substrate.
graphene on semiconductor-carbon alloy superlattice on sapphire substrate
Materials described outside the worked examples.
graphene
C
single crystalline semiconductor-carbon alloy (superlattice)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer having a hexagonal …
FIG. 3 is a vertical cross-sectional view of a second exemplary structure including a single crystalline semiconductor-carbon alloy layer having a cubic …
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 16 is a vertical cross-sectional view of a third exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 17 is a vertical cross-sectional view of a fourth exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 19 is a vertical cross-sectional view of a fifth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 20 is a vertical cross-sectional view of a sixth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 22 is a vertical cross-sectional view of a seventh exemplary structure including a sapphire substrate and a graphene layer deposited thereupon. [0040]
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIG. 25 is a vertical cross-sectional view of an eighth exemplary structure including a silicon carbide substrate and a graphene layer deposited thereupon. …
FIG. 26 is a vertical cross-sectional view of a ninth exemplary structure including an underlying semiconductor substrate, a silicon carbide substrate, and a …
FIG. 27B is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
canceled
canceled
canceled
canceled
A structure comprising a graphene layer located on a (110) surface of a single crystalline semiconductor-carbon alloy layer that is located on and epitaxially aligned to a (1102) surface of a single crystalline sapphire substrate, wherein said single crystalline semiconductor-carbon alloy laver is a superlattice including multiple repetitions laver, wherein at least one of the first material carbon, and at least one of the first material layer one of silicon and germanium.
- 8. canceled
canceled
- 10. canceled
canceled
-15. canceled
canceled
canceled
canceled
canceled
The structure of Claim [[15]]6, wherein the or an alloy of silicon, and the second material layer IBM\ 2683\24972A \ AMEND\24972A.am2.doc of a first material layer and a second material layer and the second material layer comprises and the second material layer comprises at least first material layer comprises silicon, germanium, comprise carbon or a carbon alloy. 2 I.\GF-
Layer stacks claimed or described, ordered top of device to substrate.
graphene on semiconductor-carbon alloy superlattice on sapphire substrate
Materials described outside the worked examples.
graphene
C
single crystalline semiconductor-carbon alloy (superlattice)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer having a hexagonal …
FIG. 3 is a vertical cross-sectional view of a second exemplary structure including a single crystalline semiconductor-carbon alloy layer having a cubic …
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 16 is a vertical cross-sectional view of a third exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 17 is a vertical cross-sectional view of a fourth exemplary structure including a stack of a graphene layer formed by graphitization, a single crystalline …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 19 is a vertical cross-sectional view of a fifth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 20 is a vertical cross-sectional view of a sixth exemplary structure including a stack of a graphene layer formed by deposition of carbon, a single …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 22 is a vertical cross-sectional view of a seventh exemplary structure including a sapphire substrate and a graphene layer deposited thereupon. [0040]
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIG. 25 is a vertical cross-sectional view of an eighth exemplary structure including a silicon carbide substrate and a graphene layer deposited thereupon. …
FIG. 26 is a vertical cross-sectional view of a ninth exemplary structure including an underlying semiconductor substrate, a silicon carbide substrate, and a …
FIG. 27B is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
canceled
canceled
canceled
canceled
A structure comprising a graphene layer located on a (110) surface of a single crystalline semiconductor-carbon alloy layer that is located on and epitaxially aligned to a (1102) surface of a single crystalline sapphire substrate, wherein said single crystalline semiconductor-carbon alloy laver is a superlattice including multiple repetitions laver, wherein at least one of the first material carbon, and at least one of the first material layer one of silicon and germanium.
- 8. canceled
canceled
- 10. canceled
canceled
-15. canceled
canceled
canceled
canceled
canceled
The structure of Claim [[15]]6, wherein the or an alloy of silicon, and the second material layer IBM\ 2683\24972A \ AMEND\24972A.am2.doc of a first material layer and a second material layer and the second material layer comprises and the second material layer comprises at least first material layer comprises silicon, germanium, comprise carbon or a carbon alloy. 2 I.\GF-
Layer stacks claimed or described, ordered top of device to substrate.
graphene on semiconductor-carbon alloy superlattice on sapphire substrate
Materials described outside the worked examples.
graphene
C
single crystalline semiconductor-carbon alloy (superlattice)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
single crystalline sapphire
Al₂O₃
silicon
Si
germanium
Ge
carbon or carbon alloy
silicon carbide
SiC
silicon-carbon alloy
silicon-germanium-carbon alloy
germanium-carbon alloy
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
| 900–1400 °C |
| — |
Temperature | 1000–1400 °C | — |
Temperature | 300–800 °C | — |
Pressure | 1–10 mTorr | — |
Pressure | 0.1–100 mTorr | — |
Flow Rate | 2–30 sccm | — |
Flow Rate | 2–40 sccm | — |
Temperature | 400–1000 °C | — |
Pressure | 0.000001 Torr | — |
Thickness | ≥ 34 nm | — |
Thickness | ≥ 20 nm | — |
single crystalline sapphire
Al₂O₃
silicon
Si
germanium
Ge
carbon or carbon alloy
silicon carbide
SiC
silicon-carbon alloy
silicon-germanium-carbon alloy
germanium-carbon alloy
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
| 900–1400 °C |
| — |
Temperature | 1000–1400 °C | — |
Temperature | 300–800 °C | — |
Pressure | 1–10 mTorr | — |
Pressure | 0.1–100 mTorr | — |
Flow Rate | 2–30 sccm | — |
Flow Rate | 2–40 sccm | — |
Temperature | 400–1000 °C | — |
Pressure | 0.000001 Torr | — |
Thickness | ≥ 34 nm | — |
Thickness | ≥ 20 nm | — |
single crystalline sapphire
Al₂O₃
silicon
Si
germanium
Ge
carbon or carbon alloy
silicon carbide
SiC
silicon-carbon alloy
silicon-germanium-carbon alloy
germanium-carbon alloy
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
| 900–1400 °C |
| — |
Temperature | 1000–1400 °C | — |
Temperature | 300–800 °C | — |
Pressure | 1–10 mTorr | — |
Pressure | 0.1–100 mTorr | — |
Flow Rate | 2–30 sccm | — |
Flow Rate | 2–40 sccm | — |
Temperature | 400–1000 °C | — |
Pressure | 0.000001 Torr | — |
Thickness | ≥ 34 nm | — |
Thickness | ≥ 20 nm | — |
single crystalline sapphire
Al₂O₃
silicon
Si
germanium
Ge
carbon or carbon alloy
silicon carbide
SiC
silicon-carbon alloy
silicon-germanium-carbon alloy
germanium-carbon alloy
FIG. 4 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (0001) surface orientation before deposition of any single crystalline …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 5 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 6 is a magnified graph of x-ray diffraction (XRD) data of
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 7 is a graph of x-ray diffraction (XRD) data from a sapphire substrate having a (1102) surface orientation before deposition of any single crystalline …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 8 is a graph of x-ray diffraction (XRD) data from a stack of a single crystalline semiconductor-carbon alloy layer having a hexagonal crystal structure and …
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 9A before formation of a graphene layer employing the atomic force microscopy (AFM) probe. [0049]
FIG. 10 is a graph of data from a secondary ion mass spectroscopy (S I MS) run on a single crystalline silicon carbide layer having a hexagonal crystal …
FIG. 11 is a transmission electron microscopy (TEM) picture of an area of a sample including a stack of a single crystalline semiconductor-carbon alloy layer …
FIG. 12 is a transmission electron microscopy (TEM) picture of another area of the sample of
FIG. 13 is a high magnification transmission electron microscopy (TEM) picture of an area of the sample of
FIG. 14 is a Fourier transformation image of the silicon carbide area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 15 is a Fourier transformation image of the sapphire area of the high magnification transmission electron microscopy (TEM) picture of
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 18B shows Raman spectra of a graphene layer formed by graphitization and located on a (110) silicon carbide layer on a (1102) sapphire substrate. Each of …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 21B shows Raman spectra of a graphene layer formed by deposition of carbon and located on a silicon carbide layer. Each of the four Raman spectra …
FIG. 23 shows Raman spectra of a graphene layer formed by deposition of carbon and located on a sapphire substrate. Each of the four Raman spectra corresponds …
FIG. 24 shows a transmission electron microscopy (TEM) picture of a sample including a graphene layer formed by deposition of carbon and located on a sapphire …
FIGS. 28A-28C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 29A is an image from a height scan of a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 microns x 20 microns …
FIG. 30A is an image from a height scan of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry over an area of 20 …
| 900–1400 °C |
| — |
Temperature | 1000–1400 °C | — |
Temperature | 300–800 °C | — |
Pressure | 1–10 mTorr | — |
Pressure | 0.1–100 mTorr | — |
Flow Rate | 2–30 sccm | — |
Flow Rate | 2–40 sccm | — |
Temperature | 400–1000 °C | — |
Pressure | 0.000001 Torr | — |
Thickness | ≥ 34 nm | — |
Thickness | ≥ 20 nm | — |