METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

Makoto WATANABE

Patent

Atlas literature

Patent

US 9,890,471

METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

Makoto WATANABE

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 Description NDEX 1 400 1 -US 1/35 [Name of Document] Description [Title of Invention] METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL [Technical Field] …

FIG. 2

FIG. 2 is a schematic diagram showing an example of the reaction apparatus used in the 20 production method according to the embodiment. [0016] As shown in FIG …

FIG. 3

FIG. 3B.

FIG. 5

performance graph

FIG. 5 is a graph showing XRD spectra of the gallium nitride crystals produced by the production method according to Example 1 [0072] As shown in

FIG. 7

FIG. 7. Further, similarly to Example 1, the gallium nitride crystal produced using sample 1 was observed with a SEM to obtain a SEM image. The result is shown …

FIG. 10

performance graph

FIG. 10 is a graph showing the amount of mass increase with respect to the 20 reaction temperature of metal gallium and iron nitride. [FIG 11] FIG 11 is a …

FIG. 11

performance graph

FIG. 11 is a graph showing a temperature increase proﬁle during heating in Example 4 [0092] 20 As shown in

FIG. 12

performance graph

FIG. 12B. FIG 12B is a graph showing an XRD spectrum of the gallium nitride crystal ﬁlmproduced at a temperature increase of SVG …

FIG. 14

FIG. 14 is a graph in which the presence or absence of the rising of the liquid surface is plotted against the amount of tetrairon mononitride added and the …

FIG. 15

FIG. 15 is a perspective view showing the structure of a holder that holds a crystal growth substrate. [FIG 16] FIG 16 is an illustration diagram describing a …

FIG. 16

FIG. 16. FIG 15 is a perspective view showing the structure of the holder 300 that holds the crystal growth substrate 210B. FIG 16 is an illustration diagram …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

4 independent · 10 dependent

1
IndependentGairon nitrideGaN
A method for producing a gallium nitride crystal, the method comprising. [[a step of]] heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react., wherein a proportion of a number of moles of an iron element in the iron nitride to a total number of moles of the metal g allium and the iron element in the iron nitride is equal to or more than 0.1% and equal to or less than 30.8%. Currently amended
1. 2
  Dependent← claim 1Fe₄NFe₃NFe₂N
  The method for producing a gallium nitride crystal according to claim 1, wherein the iron nitride contains at least one of tetrairon mononitride, triiron mononitride, and diiron mononitride. Original
2. 3
  Dependent← claim 1Gairon nitride
  The method for producing a gallium nitride crystal according to claim 1, wherein the reaction temperature is equal to or more than 500 0 C and equal to or less than 1000 ° C, and wherein the method further comprises [[a step of]] keeping the metal gallium and the iron nitride at a temperature in a range of the reaction temperature after the metal gallium and the iron nitride are heated to the reaction temperature. Currently amended
3. 4
  Dependent← claim 1Gairon nitrideBN
  The method for producing a gallium nitride crystal according to [[any one of]] claim 1, wherein the metal gallium and the iron nitride are heated using a crucible made of boron nitride as a vessel. Currently amended
4. 6
  Dependent← claim 1Gairon nitride
  The method for producing a gallium nitride crystal according to [[any one of]] claim 1, wherein, when the reaction temperature is denoted by T [° C], a proportion X [%] of the number of moles of an iron element in the iron nitride to the total number of moles of the metal gallium and the iron element in the iron nitride satisﬁes Mathematical Formula 1 below: SVG 14916055.10-19-2017.J₈YSKGARRXEAPX1.CLM.1.svg 0.17 5.86 Black and white 1. Currently amended
5. 7
  Dependent← claim 1Gairon nitride
  The method for producing a gallium nitride crystal according to claim 1, further comprising: increasing a temperature of the metal gallium and the iron nitride above the reaction temperature by between approximately 1 o C and 6 0 C per hour after the metal gallium and the iron nitride are heated to the reaction temperature. New
6. 8
  Dependent← claim 1Gairon nitride
  The method for producing a gallium nitride crystal according to claim 1, wherein heating the metal gallium and iron nitride method further comprises increasing a temperature of the metal gallium and the iron nitride by between approximately 60 0 C and 100 o C per hour until the metal gallium and the iron nitride are heated to the reaction temperature. New
7. 9
  Dependent← claim 1Gairon nitrideGaN
  The method for producing a gallium nitride crystal according to claim 1, wherein the metal gallium and the iron nitride are heated as a molten liquid and at least one crystal growth substrate is immersed in the molten liquid in order to form the gallium nitride crystal on a surface of the at least one crystal growth substrate. New
8. 14
  Dependent← claim 1, claim 9GaN
  The method for producing a gallium nitride nitride crystal is formed as a ﬁlm having an average and 2.4 pm. New crystal according to claim 9, wherein the at least of crystal growth substrates attached crystal according to claim 9, wherein the at least sapphire substrate. New crystal according to claim 1, wherein the gallium thickness of between approximately 2.2 pm
5
Independent
. Canceled
12
Independent
The method for producing a gallium nitride one crystal growth substrate comprises a plurality horizontally parallel to one another. New
13
Independent
The method for producing a gallium nitride one crystal growth substrate comprises at least one

Worked examples

Embodiments described in the patent, grouped by the materials and process steps they use.

Example 1

example section example

3 materials1 process step

Gallium nitride crystal produced by heating metal gallium and iron nitride (Fe₄N) in a nitrogen atmosphere. Temperature profile shown in FIG 4. XRD analysis (FIG 5) and SEM observation (FIG 6) of the resulting GaN crystals were performed.

Example 2

example section example

3 materials1 process step

Gallium nitride crystal produced with different conditions. XRD spectra (FIG 7) and SEM observation (FIG 8) of the resulting GaN crystal were performed.

Example 4

example section example

3 materials1 process step

Gallium nitride crystal film produced on a crystal growth substrate. Temperature increase profile shown in FIG 11. GaN crystal films produced at 1°C/hr (FIG 12A) and 6°C/hr (FIG 12B) temperature increases were characterized by XRD.

Example 5

example section example

2 materials1 process step

Investigation of the presence or absence of rising of the liquid surface of the molten liquid as a function of amount of tetrairon mononitride added and heating temperature (FIG 14). Crystal growth substrate held in a holder (FIG 15, FIG 16) and immersed in molten liquid.

Materials

Materials described outside the worked examples.

triiron mononitride

Fe₃N

Iron Nitride Reactant

diiron mononitride

Fe₂N

Iron Nitride Reactant

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

xrd

XRD

FIG. 5 is a graph showing XRD spectra of the gallium nitride crystals produced by the production method according to Example 1 [0072] As shown in

Figure references

FIG. 5

device performance measurement

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
GaN film average thickness	2.2–2.4	GaN
Temperature	≤ 1 °C

Tables

Table 1
(Table 1 SVG
In Table 1, the proportion of the number of moles of the iron element
p. 10
Table 2
(Table 2 20 SVG
(Table 2 20 SVG 14916055.
p. 11

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL | Matter42 Literature