Patent
US 8,641,915ELECTRONIC DEVICE UTILIZING GRAPHENE ELECTRODES AND ORGANIC/INORGANIC HYBRID COMPOSITES AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE
Tae-Whan Kim
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,641,915Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating an organic/inorganic hybrid composite electronic device utilizing graphene according to example embodiments; [0035]
FIG. 2 is a perspective view illustrating another electronic device according to example embodiments; [0036]
FIG. 3 is a flowchart illustrating a method for manufacturing an electronic device according to example embodiments; [003 7]
FIGS. 4A through 4C are perspective views illustrating the method of
FIG. 5 is a flowchart illustrating a process of manufacturing a graphene thin film according to example embodiments; [0039]
FIGS. 6 and 8 are perspective views illustrating the method according to the flowchart of
FIG. 7 is a cross-sectional view of chamber used in the method according to the flowchart of
FIG. 8, by stopping the supply of the vapor carbon supply source and reducing the amount of current to cool the graphite metal layer 220 at a controlled speed. …
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
FIGS. 12 and 13 are cross-sectional views illustrating an operation principle of a photodetector manufactured according to example embodiments.
FIG. 13, a current may flow as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution her t polyerthnfmicu -ateact on fol attaching the graphene thin film to the polymer thin fi lm; patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 3 of 16 and second electrodes being substantially coplanar relative to the polymer thin film including the nanoparticles.
The method of claim 10, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene.
The method of claim 10, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate i n N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 4 of 16 forming a polymer solution by mixing a polymer material in the mixed solution including the nan o particles.
The method of claim 10, wherein the substrate is a glass substrate, an d further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) is-fefned on the glass substrate, wherein the nanoparticles ielade includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
The method of claim 10, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; U.S. Application Serial No. 12/860,553,, Atty. Dkt. No. 8947-000492/US Page 5 of 16 heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO 2 substrate in the chamber; depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the g raphit e metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface. of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the Si O 2 substrate by removing the graphite metal layer by an acid treatment.
The method of claim 10, wherein the polymer thin film includes at least one selected from polyvinyl pyrrolidone (PVP), polystyrene (PS), polymethyl methacrylate (PMMA), poly-N-vinylcarbazole (PVK) and polyimide (P I).
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution; and forming a top electrode by attaching the graphene thin film directly on the polymer thin film.
The method of claim 25, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene. U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 7 of 16
(NE W) The method of claim 25, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate in N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and forming a polymer solution by mixing a polymer material in the mixed solution including the nanoparticles.
(NE w) The method of claim 25, wherein the substrate is a glass substrate, and further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) on the glass substrate, wherein the nanoparticles includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
(NE w) The method of claim 25, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO₂ substrate in the chamber; U.S. Application Serial No. 12/860,553. Atty. Dkt. No. 8947-000492/US Page 8 of 16 depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the graphite metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the SiO 2 substrate by removing the graphite metal layer by an acid treatment.
(NE w) The method of claim 25, wherein forming the top electrode comprises: patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first and second electrodes begin substantially coplanar relative to the polymer thin film including the nanoparticles. END OF CLAIM LISTING
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with coplanar graphene electrodes on polymer nanoparticle film
electronic device with graphene top electrode on polymer nanoparticle film
Materials described outside the worked examples.
graphene thin film
nanoparticles (metal oxide/carbonate)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Temperature | 1–50 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,641,915Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating an organic/inorganic hybrid composite electronic device utilizing graphene according to example embodiments; [0035]
FIG. 2 is a perspective view illustrating another electronic device according to example embodiments; [0036]
FIG. 3 is a flowchart illustrating a method for manufacturing an electronic device according to example embodiments; [003 7]
FIGS. 4A through 4C are perspective views illustrating the method of
FIG. 5 is a flowchart illustrating a process of manufacturing a graphene thin film according to example embodiments; [0039]
FIGS. 6 and 8 are perspective views illustrating the method according to the flowchart of
FIG. 7 is a cross-sectional view of chamber used in the method according to the flowchart of
FIG. 8, by stopping the supply of the vapor carbon supply source and reducing the amount of current to cool the graphite metal layer 220 at a controlled speed. …
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
FIGS. 12 and 13 are cross-sectional views illustrating an operation principle of a photodetector manufactured according to example embodiments.
FIG. 13, a current may flow as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution her t polyerthnfmicu -ateact on fol attaching the graphene thin film to the polymer thin fi lm; patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 3 of 16 and second electrodes being substantially coplanar relative to the polymer thin film including the nanoparticles.
The method of claim 10, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene.
The method of claim 10, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate i n N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 4 of 16 forming a polymer solution by mixing a polymer material in the mixed solution including the nan o particles.
The method of claim 10, wherein the substrate is a glass substrate, an d further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) is-fefned on the glass substrate, wherein the nanoparticles ielade includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
The method of claim 10, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; U.S. Application Serial No. 12/860,553,, Atty. Dkt. No. 8947-000492/US Page 5 of 16 heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO 2 substrate in the chamber; depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the g raphit e metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface. of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the Si O 2 substrate by removing the graphite metal layer by an acid treatment.
The method of claim 10, wherein the polymer thin film includes at least one selected from polyvinyl pyrrolidone (PVP), polystyrene (PS), polymethyl methacrylate (PMMA), poly-N-vinylcarbazole (PVK) and polyimide (P I).
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution; and forming a top electrode by attaching the graphene thin film directly on the polymer thin film.
The method of claim 25, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene. U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 7 of 16
(NE W) The method of claim 25, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate in N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and forming a polymer solution by mixing a polymer material in the mixed solution including the nanoparticles.
(NE w) The method of claim 25, wherein the substrate is a glass substrate, and further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) on the glass substrate, wherein the nanoparticles includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
(NE w) The method of claim 25, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO₂ substrate in the chamber; U.S. Application Serial No. 12/860,553. Atty. Dkt. No. 8947-000492/US Page 8 of 16 depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the graphite metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the SiO 2 substrate by removing the graphite metal layer by an acid treatment.
(NE w) The method of claim 25, wherein forming the top electrode comprises: patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first and second electrodes begin substantially coplanar relative to the polymer thin film including the nanoparticles. END OF CLAIM LISTING
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with coplanar graphene electrodes on polymer nanoparticle film
electronic device with graphene top electrode on polymer nanoparticle film
Materials described outside the worked examples.
graphene thin film
nanoparticles (metal oxide/carbonate)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Temperature | 1–50 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,641,915Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating an organic/inorganic hybrid composite electronic device utilizing graphene according to example embodiments; [0035]
FIG. 2 is a perspective view illustrating another electronic device according to example embodiments; [0036]
FIG. 3 is a flowchart illustrating a method for manufacturing an electronic device according to example embodiments; [003 7]
FIGS. 4A through 4C are perspective views illustrating the method of
FIG. 5 is a flowchart illustrating a process of manufacturing a graphene thin film according to example embodiments; [0039]
FIGS. 6 and 8 are perspective views illustrating the method according to the flowchart of
FIG. 7 is a cross-sectional view of chamber used in the method according to the flowchart of
FIG. 8, by stopping the supply of the vapor carbon supply source and reducing the amount of current to cool the graphite metal layer 220 at a controlled speed. …
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
FIGS. 12 and 13 are cross-sectional views illustrating an operation principle of a photodetector manufactured according to example embodiments.
FIG. 13, a current may flow as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution her t polyerthnfmicu -ateact on fol attaching the graphene thin film to the polymer thin fi lm; patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 3 of 16 and second electrodes being substantially coplanar relative to the polymer thin film including the nanoparticles.
The method of claim 10, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene.
The method of claim 10, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate i n N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 4 of 16 forming a polymer solution by mixing a polymer material in the mixed solution including the nan o particles.
The method of claim 10, wherein the substrate is a glass substrate, an d further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) is-fefned on the glass substrate, wherein the nanoparticles ielade includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
The method of claim 10, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; U.S. Application Serial No. 12/860,553,, Atty. Dkt. No. 8947-000492/US Page 5 of 16 heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO 2 substrate in the chamber; depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the g raphit e metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface. of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the Si O 2 substrate by removing the graphite metal layer by an acid treatment.
The method of claim 10, wherein the polymer thin film includes at least one selected from polyvinyl pyrrolidone (PVP), polystyrene (PS), polymethyl methacrylate (PMMA), poly-N-vinylcarbazole (PVK) and polyimide (P I).
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution; and forming a top electrode by attaching the graphene thin film directly on the polymer thin film.
The method of claim 25, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene. U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 7 of 16
(NE W) The method of claim 25, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate in N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and forming a polymer solution by mixing a polymer material in the mixed solution including the nanoparticles.
(NE w) The method of claim 25, wherein the substrate is a glass substrate, and further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) on the glass substrate, wherein the nanoparticles includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
(NE w) The method of claim 25, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO₂ substrate in the chamber; U.S. Application Serial No. 12/860,553. Atty. Dkt. No. 8947-000492/US Page 8 of 16 depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the graphite metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the SiO 2 substrate by removing the graphite metal layer by an acid treatment.
(NE w) The method of claim 25, wherein forming the top electrode comprises: patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first and second electrodes begin substantially coplanar relative to the polymer thin film including the nanoparticles. END OF CLAIM LISTING
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with coplanar graphene electrodes on polymer nanoparticle film
electronic device with graphene top electrode on polymer nanoparticle film
Materials described outside the worked examples.
graphene thin film
nanoparticles (metal oxide/carbonate)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Temperature | 1–50 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,641,915Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating an organic/inorganic hybrid composite electronic device utilizing graphene according to example embodiments; [0035]
FIG. 2 is a perspective view illustrating another electronic device according to example embodiments; [0036]
FIG. 3 is a flowchart illustrating a method for manufacturing an electronic device according to example embodiments; [003 7]
FIGS. 4A through 4C are perspective views illustrating the method of
FIG. 5 is a flowchart illustrating a process of manufacturing a graphene thin film according to example embodiments; [0039]
FIGS. 6 and 8 are perspective views illustrating the method according to the flowchart of
FIG. 7 is a cross-sectional view of chamber used in the method according to the flowchart of
FIG. 8, by stopping the supply of the vapor carbon supply source and reducing the amount of current to cool the graphite metal layer 220 at a controlled speed. …
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
FIGS. 12 and 13 are cross-sectional views illustrating an operation principle of a photodetector manufactured according to example embodiments.
FIG. 13, a current may flow as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution her t polyerthnfmicu -ateact on fol attaching the graphene thin film to the polymer thin fi lm; patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 3 of 16 and second electrodes being substantially coplanar relative to the polymer thin film including the nanoparticles.
The method of claim 10, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene.
The method of claim 10, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate i n N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 4 of 16 forming a polymer solution by mixing a polymer material in the mixed solution including the nan o particles.
The method of claim 10, wherein the substrate is a glass substrate, an d further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) is-fefned on the glass substrate, wherein the nanoparticles ielade includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
The method of claim 10, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; U.S. Application Serial No. 12/860,553,, Atty. Dkt. No. 8947-000492/US Page 5 of 16 heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO 2 substrate in the chamber; depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the g raphit e metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface. of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the Si O 2 substrate by removing the graphite metal layer by an acid treatment.
The method of claim 10, wherein the polymer thin film includes at least one selected from polyvinyl pyrrolidone (PVP), polystyrene (PS), polymethyl methacrylate (PMMA), poly-N-vinylcarbazole (PVK) and polyimide (P I).
A method for manufacturing an electronic device, comprising: forming a graphene thin film of a sheet shape by graphene deposition using a vapor carbon supply source; preparing a polymer solution with distributed nanoparticles; spin-coating the polymer solution with distributed nanoparticles on a substrate; forming a polymer thin film including the nanoparticles by drying the spin-coated polymer solution; and forming a top electrode by attaching the graphene thin film directly on the polymer thin film.
The method of claim 25, wherein forming the graphene thin film comprises: depositing graphene on a SiO₂ substrate; and separating the SiO₂ substrate and the graphene. U.S. Application Serial No. 12/860,553 Atty. Dkt. No. 8947-000492/US Page 7 of 16
(NE W) The method of claim 25, wherein preparing the polymer solution with distributed nanoparticles comprises: forming a mixed solution by dissolving metal acetate dihydrate in N, N-Dimethylformamide (DMF); forming nanoparticles by reducing heating temperature after the mixed solution is heated; and forming a polymer solution by mixing a polymer material in the mixed solution including the nanoparticles.
(NE w) The method of claim 25, wherein the substrate is a glass substrate, and further comprising: forming a bottom electrode including Indium Tin Oxide (ITO) on the glass substrate, wherein the nanoparticles includes ZnO, and the polymer thin film includes poly-N-vinylcarbazole (PVK).
(NE w) The method of claim 25, wherein forming the graphene thin film comprises: placing a SiO₂ substrate including a graphite metal layer formed thereon in a chamber; heating the graphite metal layer by a heat transport effect when current flows in at least one of the graphite metal layer and the SiO₂ substrate in the chamber; U.S. Application Serial No. 12/860,553. Atty. Dkt. No. 8947-000492/US Page 8 of 16 depositing carbon ingredients on the graphite metal layer by supplying a vapor carbon supply source in the chamber when the graphite metal layer is heated; extracting graphene from the deposited carbon ingredients to a surface of the graphite metal layer by cooling the graphite metal layer at a controlled rate by adjusting the amount of current; and separating the extracted graphene from the SiO 2 substrate by removing the graphite metal layer by an acid treatment.
(NE w) The method of claim 25, wherein forming the top electrode comprises: patterning the graphene thin film to define a third region between a first region and a second region; and removing the third region to form a first electrode corresponding to the first region and a second electrode corresponding to the second region, the first and second electrodes begin substantially coplanar relative to the polymer thin film including the nanoparticles. END OF CLAIM LISTING
Layer stacks claimed or described, ordered top of device to substrate.
electronic device with coplanar graphene electrodes on polymer nanoparticle film
electronic device with graphene top electrode on polymer nanoparticle film
Materials described outside the worked examples.
graphene thin film
nanoparticles (metal oxide/carbonate)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a cross-sectional Transmission Electron Microscope (TEM) photo illustrating a poly-N-vinylcarbazole (PVK) thin film with distributed ZnO particles, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1000 °C | — |
Temperature | 1–50 °C |
Related documents with shared materials, methods, properties, or citations.
SiO₂ substrate
SiO₂
Ni (graphite metal catalyst)
Ni
CH₄ gas
CH₄
metal acetate dihydrate
M(CH₃COO)2·2H₂O
N,N-Dimethylformamide (DMF)
Indium Tin Oxide (ITO)
ZnO nanoparticles
ZnO
poly-N-vinylcarbazole (PVK)
polymer thin film material
hydrogen
H₂
argon
Ar
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
| — |
Duration | 10–20 seconds | — |
SiO₂ substrate
SiO₂
Ni (graphite metal catalyst)
Ni
CH₄ gas
CH₄
metal acetate dihydrate
M(CH₃COO)2·2H₂O
N,N-Dimethylformamide (DMF)
Indium Tin Oxide (ITO)
ZnO nanoparticles
ZnO
poly-N-vinylcarbazole (PVK)
polymer thin film material
hydrogen
H₂
argon
Ar
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
| — |
Duration | 10–20 seconds | — |
SiO₂ substrate
SiO₂
Ni (graphite metal catalyst)
Ni
CH₄ gas
CH₄
metal acetate dihydrate
M(CH₃COO)2·2H₂O
N,N-Dimethylformamide (DMF)
Indium Tin Oxide (ITO)
ZnO nanoparticles
ZnO
poly-N-vinylcarbazole (PVK)
polymer thin film material
hydrogen
H₂
argon
Ar
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
| — |
Duration | 10–20 seconds | — |
SiO₂ substrate
SiO₂
Ni (graphite metal catalyst)
Ni
CH₄ gas
CH₄
metal acetate dihydrate
M(CH₃COO)2·2H₂O
N,N-Dimethylformamide (DMF)
Indium Tin Oxide (ITO)
ZnO nanoparticles
ZnO
poly-N-vinylcarbazole (PVK)
polymer thin film material
hydrogen
H₂
argon
Ar
FIG. 10 is a cross-sectional TEM photo illustrating a photodetector according to example embodiments; [0043]
FIG. 11 is a graph illustrating a voltage-current relation of a comparative photodetector with respect to a photodetector manufactured according to example …
| — |
Duration | 10–20 seconds | — |