Patent
US 8,679,976METHOD OF MANUFACTURING GRAPHENE BY USING GERMANIUM LAYER
Eun-kyung LEE
US
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Patent
Atlas literature
Patent
US 8,679,976Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are schematic views illustrating an embodiment of a method of manufacturing graphene, according to the present invention; [0021]
FIG. 2, a graphene layer 130 is formed directly on an upper surface of the germanium layer 120, such as by using a CVD method. In order to form the graphene …
FIG. 3 is a schematic view illustrating another embodiment of a method of manufacturing graphene, according to the present invention; and [0022]
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, the method comprising: forming a germanium layer on a surface of a substrate; and forming the graphene directly on the germanium layer using a chemical vapor deposit method by supplying carbon-containing gas into a chamber in which the substrate is disposed.
The method of claim 1, wherein the substrate includes one material selected from the group consisting of silicon, silicon oxide, quartz, glass, plastic, sapphire and a combination thereof.
The method of claim 1, wherein the graphene includes one to three graphene layers.
The method of claim 1, wherein the germanium layer is a single crystalline or polycrystalline germanium layer.
The method of claim 1, wherein no catalyst metal layer is used in the forming the graphene.
canceled
A method of manufacturing graphene, the method comprising: supplying carbon-containing gas into a chamber in which a germanium substrate is disposed; and forming the graphene directly on the germanium substrate using a chemical vapor deposit method.
The method of claim 7, wherein the graphene includes one to three graphene layers.
The method of claim 7, wherein the germanium substrate is a single crystalline substrate.
canceled
A method of manufacturing graphene, the method comprising: forming a germanium layer directly on an upper surface of a substrate; disposing the substrate including the germanium layer into a chamber; supplying carbon-containing gas into the chamber in which the substrate and the germanium layer are disposed, to form the graphene directly on an upper surface of the germanium layer using a chemical vapor deposit method; disposing a support member on an upper surface of the formed graphene; and removing the germanium layer while the support member is on the upper surface of the formed graphene, to separate the formed graphene from the substrate.
Materials described outside the worked examples.
graphene
germanium layer
Ge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–760 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,679,976Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are schematic views illustrating an embodiment of a method of manufacturing graphene, according to the present invention; [0021]
FIG. 2, a graphene layer 130 is formed directly on an upper surface of the germanium layer 120, such as by using a CVD method. In order to form the graphene …
FIG. 3 is a schematic view illustrating another embodiment of a method of manufacturing graphene, according to the present invention; and [0022]
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, the method comprising: forming a germanium layer on a surface of a substrate; and forming the graphene directly on the germanium layer using a chemical vapor deposit method by supplying carbon-containing gas into a chamber in which the substrate is disposed.
The method of claim 1, wherein the substrate includes one material selected from the group consisting of silicon, silicon oxide, quartz, glass, plastic, sapphire and a combination thereof.
The method of claim 1, wherein the graphene includes one to three graphene layers.
The method of claim 1, wherein the germanium layer is a single crystalline or polycrystalline germanium layer.
The method of claim 1, wherein no catalyst metal layer is used in the forming the graphene.
canceled
A method of manufacturing graphene, the method comprising: supplying carbon-containing gas into a chamber in which a germanium substrate is disposed; and forming the graphene directly on the germanium substrate using a chemical vapor deposit method.
The method of claim 7, wherein the graphene includes one to three graphene layers.
The method of claim 7, wherein the germanium substrate is a single crystalline substrate.
canceled
A method of manufacturing graphene, the method comprising: forming a germanium layer directly on an upper surface of a substrate; disposing the substrate including the germanium layer into a chamber; supplying carbon-containing gas into the chamber in which the substrate and the germanium layer are disposed, to form the graphene directly on an upper surface of the germanium layer using a chemical vapor deposit method; disposing a support member on an upper surface of the formed graphene; and removing the germanium layer while the support member is on the upper surface of the formed graphene, to separate the formed graphene from the substrate.
Materials described outside the worked examples.
graphene
germanium layer
Ge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–760 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,679,976Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are schematic views illustrating an embodiment of a method of manufacturing graphene, according to the present invention; [0021]
FIG. 2, a graphene layer 130 is formed directly on an upper surface of the germanium layer 120, such as by using a CVD method. In order to form the graphene …
FIG. 3 is a schematic view illustrating another embodiment of a method of manufacturing graphene, according to the present invention; and [0022]
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, the method comprising: forming a germanium layer on a surface of a substrate; and forming the graphene directly on the germanium layer using a chemical vapor deposit method by supplying carbon-containing gas into a chamber in which the substrate is disposed.
The method of claim 1, wherein the substrate includes one material selected from the group consisting of silicon, silicon oxide, quartz, glass, plastic, sapphire and a combination thereof.
The method of claim 1, wherein the graphene includes one to three graphene layers.
The method of claim 1, wherein the germanium layer is a single crystalline or polycrystalline germanium layer.
The method of claim 1, wherein no catalyst metal layer is used in the forming the graphene.
canceled
A method of manufacturing graphene, the method comprising: supplying carbon-containing gas into a chamber in which a germanium substrate is disposed; and forming the graphene directly on the germanium substrate using a chemical vapor deposit method.
The method of claim 7, wherein the graphene includes one to three graphene layers.
The method of claim 7, wherein the germanium substrate is a single crystalline substrate.
canceled
A method of manufacturing graphene, the method comprising: forming a germanium layer directly on an upper surface of a substrate; disposing the substrate including the germanium layer into a chamber; supplying carbon-containing gas into the chamber in which the substrate and the germanium layer are disposed, to form the graphene directly on an upper surface of the germanium layer using a chemical vapor deposit method; disposing a support member on an upper surface of the formed graphene; and removing the germanium layer while the support member is on the upper surface of the formed graphene, to separate the formed graphene from the substrate.
Materials described outside the worked examples.
graphene
germanium layer
Ge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–760 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,679,976Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are schematic views illustrating an embodiment of a method of manufacturing graphene, according to the present invention; [0021]
FIG. 2, a graphene layer 130 is formed directly on an upper surface of the germanium layer 120, such as by using a CVD method. In order to form the graphene …
FIG. 3 is a schematic view illustrating another embodiment of a method of manufacturing graphene, according to the present invention; and [0022]
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing graphene, the method comprising: forming a germanium layer on a surface of a substrate; and forming the graphene directly on the germanium layer using a chemical vapor deposit method by supplying carbon-containing gas into a chamber in which the substrate is disposed.
The method of claim 1, wherein the substrate includes one material selected from the group consisting of silicon, silicon oxide, quartz, glass, plastic, sapphire and a combination thereof.
The method of claim 1, wherein the graphene includes one to three graphene layers.
The method of claim 1, wherein the germanium layer is a single crystalline or polycrystalline germanium layer.
The method of claim 1, wherein no catalyst metal layer is used in the forming the graphene.
canceled
A method of manufacturing graphene, the method comprising: supplying carbon-containing gas into a chamber in which a germanium substrate is disposed; and forming the graphene directly on the germanium substrate using a chemical vapor deposit method.
The method of claim 7, wherein the graphene includes one to three graphene layers.
The method of claim 7, wherein the germanium substrate is a single crystalline substrate.
canceled
A method of manufacturing graphene, the method comprising: forming a germanium layer directly on an upper surface of a substrate; disposing the substrate including the germanium layer into a chamber; supplying carbon-containing gas into the chamber in which the substrate and the germanium layer are disposed, to form the graphene directly on an upper surface of the germanium layer using a chemical vapor deposit method; disposing a support member on an upper surface of the formed graphene; and removing the germanium layer while the support member is on the upper surface of the formed graphene, to separate the formed graphene from the substrate.
Materials described outside the worked examples.
graphene
germanium layer
Ge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a transmission electron microscopy ("TEM") image showing an embodiment of two graphene layers on a germanium layer, according to the present …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.1–760 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
carbon-containing gas
substrate material
GeH₄
GeCl₄
CH₄
C₂H₂
C₂H₄
CO
| 10–60 minutes |
| — |
Thickness | 100–10000 nm | — |
carbon-containing gas
substrate material
GeH₄
GeCl₄
CH₄
C₂H₂
C₂H₄
CO
| 10–60 minutes |
| — |
Thickness | 100–10000 nm | — |
carbon-containing gas
substrate material
GeH₄
GeCl₄
CH₄
C₂H₂
C₂H₄
CO
| 10–60 minutes |
| — |
Thickness | 100–10000 nm | — |
carbon-containing gas
substrate material
GeH₄
GeCl₄
CH₄
C₂H₂
C₂H₄
CO
| 10–60 minutes |
| — |
Thickness | 100–10000 nm | — |