Patent
US 9,576,707CONDUCTIVE THIN FILM AND TRANSPARENT ELECTRODE INCLUDING GRAPHENE OXIDE AND CARBON NANOTUBE, AND METHODS OF PRODUCING THE SAME
Hyoyoung LEE
US
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US 9,576,707Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please AMEND claims 1-6, 8, 9, 11, 16 and 17, ADD claim 22, and CANCEL claims 19-21 canceled
The method of claim 1, wherein the substrate comprises one of glass, Si/SiO 2 and polyethylene terephthalate.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm.
The method for claim 1, wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr.
The A method for preparing a conductive thin film of claim 1, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom, wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom to form the layer of reduced graphene oxide and carbon nanotube, and wherein the solution is-comprises a mixture of HI solution and a weak acid selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.
The method of claim 1, further comprising: doping the substrate and the layer of comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO 3, H 2 SO 4, and SOCl₂ by exposing the substrate and the layer to a vapor of the respective dopant.
canceled
The method of claim 2, further including: 4
The method of claim 2, further including: performing heat treatment of the substrate exposed to the vapor under H 2 atmosphere.
canceled
canceled
canceled
without prejudice to the underlying subject matter, in accordance with the following: canceled
19-21. canceled
canceled
5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode with conductive thin film
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 80–150 °C | — |
Temperature |
Table 1
[00103] SVG
As shown in Table 1 above, upon comparison of Examples 1 to 5 with Comparative
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,707Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please AMEND claims 1-6, 8, 9, 11, 16 and 17, ADD claim 22, and CANCEL claims 19-21 canceled
The method of claim 1, wherein the substrate comprises one of glass, Si/SiO 2 and polyethylene terephthalate.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm.
The method for claim 1, wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr.
The A method for preparing a conductive thin film of claim 1, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom, wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom to form the layer of reduced graphene oxide and carbon nanotube, and wherein the solution is-comprises a mixture of HI solution and a weak acid selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.
The method of claim 1, further comprising: doping the substrate and the layer of comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO 3, H 2 SO 4, and SOCl₂ by exposing the substrate and the layer to a vapor of the respective dopant.
canceled
The method of claim 2, further including: 4
The method of claim 2, further including: performing heat treatment of the substrate exposed to the vapor under H 2 atmosphere.
canceled
canceled
canceled
without prejudice to the underlying subject matter, in accordance with the following: canceled
19-21. canceled
canceled
5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode with conductive thin film
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 80–150 °C | — |
Temperature |
Table 1
[00103] SVG
As shown in Table 1 above, upon comparison of Examples 1 to 5 with Comparative
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,707Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please AMEND claims 1-6, 8, 9, 11, 16 and 17, ADD claim 22, and CANCEL claims 19-21 canceled
The method of claim 1, wherein the substrate comprises one of glass, Si/SiO 2 and polyethylene terephthalate.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm.
The method for claim 1, wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr.
The A method for preparing a conductive thin film of claim 1, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom, wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom to form the layer of reduced graphene oxide and carbon nanotube, and wherein the solution is-comprises a mixture of HI solution and a weak acid selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.
The method of claim 1, further comprising: doping the substrate and the layer of comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO 3, H 2 SO 4, and SOCl₂ by exposing the substrate and the layer to a vapor of the respective dopant.
canceled
The method of claim 2, further including: 4
The method of claim 2, further including: performing heat treatment of the substrate exposed to the vapor under H 2 atmosphere.
canceled
canceled
canceled
without prejudice to the underlying subject matter, in accordance with the following: canceled
19-21. canceled
canceled
5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode with conductive thin film
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 80–150 °C | — |
Temperature |
Table 1
[00103] SVG
As shown in Table 1 above, upon comparison of Examples 1 to 5 with Comparative
p. 14
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,707Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Please AMEND claims 1-6, 8, 9, 11, 16 and 17, ADD claim 22, and CANCEL claims 19-21 canceled
The method of claim 1, wherein the substrate comprises one of glass, Si/SiO 2 and polyethylene terephthalate.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, wherein coating is performed using one of a spin coating method, a dip coating method, a bar coater method and a spray coating method.
The method of claim 1, wherein the layer of comprising reduced graphene oxide and carbon nanotube having a surface modified by carboxylic acid is formed by: coating the substrate with a liquid comprising graphene oxide or carbon nanotube, the coating involving a spin coating method with the rotation speed of the spin coating ranging from 400 rpm to 6000 rpm.
The method for claim 1, wherein the reducing agent containing the halogen atom is selected from the group consisting of HI, HCl and HBr.
The A method for preparing a conductive thin film of claim 1, the method comprising: forming a layer comprising reduced graphene oxide and carbon nanotube on a substrate using a reducing agent containing a halogen atom, wherein graphene oxide on the substrate is reduced using a vapor of a solution that comprises the reducing agent containing the halogen atom to form the layer of reduced graphene oxide and carbon nanotube, and wherein the solution is-comprises a mixture of HI solution and a weak acid selected from the group consisting of acetic acid, trifluoroacetic acid, carbonic acid, formic acid and benzoic acid.
The method of claim 1, further comprising: doping the substrate and the layer of comprising graphene oxide and carbon nanotube having a surface modified by carboxylic acid with a dopant selected from the group consisting of HNO 3, H 2 SO 4, and SOCl₂ by exposing the substrate and the layer to a vapor of the respective dopant.
canceled
The method of claim 2, further including: 4
The method of claim 2, further including: performing heat treatment of the substrate exposed to the vapor under H 2 atmosphere.
canceled
canceled
canceled
without prejudice to the underlying subject matter, in accordance with the following: canceled
19-21. canceled
canceled
5 canceled
Layer stacks claimed or described, ordered top of device to substrate.
transparent electrode with conductive thin film
Materials described outside the worked examples.
graphene oxide
reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 80–150 °C | — |
Temperature |
Table 1
[00103] SVG
As shown in Table 1 above, upon comparison of Examples 1 to 5 with Comparative
p. 14
Related documents with shared materials, methods, properties, or citations.
carbon nanotube
carbon nanotube with surface modified by carboxylic acid
substrate
glass
Si/SiO₂
polyethylene terephthalate
HI
HCl
HBr
weak acid
HNO₃
H₂SO₄
SOCl₂
surfactant
| — |
Thickness | 20–100 nm | — |
Thickness | 20–80 nm | — |
Thickness | ≤ 20 nm | — |
carbon nanotube
carbon nanotube with surface modified by carboxylic acid
substrate
glass
Si/SiO₂
polyethylene terephthalate
HI
HCl
HBr
weak acid
HNO₃
H₂SO₄
SOCl₂
surfactant
| — |
Thickness | 20–100 nm | — |
Thickness | 20–80 nm | — |
Thickness | ≤ 20 nm | — |
carbon nanotube
carbon nanotube with surface modified by carboxylic acid
substrate
glass
Si/SiO₂
polyethylene terephthalate
HI
HCl
HBr
weak acid
HNO₃
H₂SO₄
SOCl₂
surfactant
| — |
Thickness | 20–100 nm | — |
Thickness | 20–80 nm | — |
Thickness | ≤ 20 nm | — |
carbon nanotube
carbon nanotube with surface modified by carboxylic acid
substrate
glass
Si/SiO₂
polyethylene terephthalate
HI
HCl
HBr
weak acid
HNO₃
H₂SO₄
SOCl₂
surfactant
| — |
Thickness | 20–100 nm | — |
Thickness | 20–80 nm | — |
Thickness | ≤ 20 nm | — |