Patent
US 10,831,071polyhalides
Uv Vis Transmittance At Wavelength | 95 % | copper-reduced graphene oxide core-shell nanowires film |
Fet Sheet Resistance | 1000 ohm/sq | copper-reduced graphene oxide core-shell nanowires film |
Temperature | 200–400 °C | — |
Thickness | 100–500 nm | — |
Thickness | 150–300 nm | — |
Thickness | 20–100 nm | — |
Thickness | 50–250 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
polyhalides
Uv Vis Transmittance At Wavelength | 95 % | copper-reduced graphene oxide core-shell nanowires film |
Fet Sheet Resistance | 1000 ohm/sq | copper-reduced graphene oxide core-shell nanowires film |
Temperature | 200–400 °C | — |
Thickness | 100–500 nm | — |
Thickness | 150–300 nm | — |
Thickness | 20–100 nm | — |
Thickness | 50–250 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
polyhalides
Uv Vis Transmittance At Wavelength | 95 % | copper-reduced graphene oxide core-shell nanowires film |
Fet Sheet Resistance | 1000 ohm/sq | copper-reduced graphene oxide core-shell nanowires film |
Temperature | 200–400 °C | — |
Thickness | 100–500 nm | — |
Thickness | 150–300 nm | — |
Thickness | 20–100 nm | — |
Thickness | 50–250 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
polyhalides
Uv Vis Transmittance At Wavelength | 95 % | copper-reduced graphene oxide core-shell nanowires film |
Fet Sheet Resistance | 1000 ohm/sq | copper-reduced graphene oxide core-shell nanowires film |
Temperature | 200–400 °C | — |
Thickness | 100–500 nm | — |
Thickness | 150–300 nm | — |
Thickness | 20–100 nm | — |
Thickness | 50–250 nm | — |