Patent
US 10,145,005OF THE I NVENTION
Vijayen S. Veerasamy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,145,005Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate; forming a layer comprising Ni on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; and mechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film, wherein the annealing is performed, and the graphene is grown, at/450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 1, wherein the plasma-related chemical vapor deposition is remote plasma-assisted chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition is plasma-enhanced chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition uses acetylene and hydrogen as separate source gasses. Original
The method of claim 1, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 1, wherein the layer comprising Ni is 200-300 nm thick. Original
The method of claim 1, wherein the mechanical removal is delamination. Original
The method of claim 1, wherein the mechanical removal removes at least some of the graphene on the major surface of the layer comprising Ni closest the substrate. Original
The method of claim 1, wherein the layer comprising Si is oxided. Original
The method of claim 1, wherein the layer comprising Si is 10-300 nm thick. Original
The method of claim 1, wherein the layer comprising Ni is formed on the substrate at least partially under vacuum, and He ion implantation also is performed at least partially under vacuum. Original
14-16. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Ni on the substrate; implanting He ions in the layer comprising Ni; heating the layer comprising Ni with the He ions implanted therein, the implanting and the heating creating a desired stress profile in the layer comprising Ni; following creation of the desired stress profile in the layer comprising Ni, providing a hydrocarbon source gas and a separate hydrogen source gas to a remote plasma-assisted chemical vapor deposition apparatus to facilitate graphene growth on major surfaces of the layer comprising Ni opposite the substrate and adjacent the substrate; and delaminating the layer comprising Ni from the substrate, the delamination removing the layer comprising Ni from the substrate together with graphene grown on the major surface of the layer comprising Ni opposite the substrate while leaving on the substrate graphene grown on the major surface of the layer comprising Ni adjacent the substrate, in making the graphene-inclusive thin film, wherein the heating is performed, and graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 17, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 17, further comprising forming a silicon- inclusive layer on the substrate, the layer comprising Ni being formed on the silicon-inclusive layer. Original
21-22. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a buffer layer on the substrate; forming a metal catalyst layer on the buffer layer; pre-engineering stress in the metal catalyst layer via He ion implantation and thermal annealing; following the pre-engineering of stress, growing graphene on both major surfaces of the metal catalyst layer using a remote plasma-assisted chemical vapor deposition apparatus operating in connection with separate hydrocarbon and hydrogen gasses provided at different flow rates; removing the metal catalyst layer from the substrate together with graphene grown on the major surface of the metal catalyst layer opposite the substrate, while leaving on the substrate graphene grown on the major surface of the metal catalyst layer adjacent the substrate, in making the graphene-inclusive thin film; and wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
24-26. Canceled
Canceled
A method of making a coated article including a graphene-inclusive film supported by a glass substrate, the method comprising: forming a layer comprising Si on the glass substrate; forming a layer comprising Ni on the glass substrate and on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni; and removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the glass substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the glass substrate on the layer comprising Si following the removal, in making the graphene-inclusive film, wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-inclusive coated glass article
Materials described outside the worked examples.
graphene
C
nickel layer
Ni
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 281.2–284.5 eV | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Copper-reduced graphene oxide core-shell transparent conductor for controlling light transmission and method of making the same
Patent
Atlas literature
Patent
US 10,145,005Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate; forming a layer comprising Ni on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; and mechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film, wherein the annealing is performed, and the graphene is grown, at/450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 1, wherein the plasma-related chemical vapor deposition is remote plasma-assisted chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition is plasma-enhanced chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition uses acetylene and hydrogen as separate source gasses. Original
The method of claim 1, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 1, wherein the layer comprising Ni is 200-300 nm thick. Original
The method of claim 1, wherein the mechanical removal is delamination. Original
The method of claim 1, wherein the mechanical removal removes at least some of the graphene on the major surface of the layer comprising Ni closest the substrate. Original
The method of claim 1, wherein the layer comprising Si is oxided. Original
The method of claim 1, wherein the layer comprising Si is 10-300 nm thick. Original
The method of claim 1, wherein the layer comprising Ni is formed on the substrate at least partially under vacuum, and He ion implantation also is performed at least partially under vacuum. Original
14-16. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Ni on the substrate; implanting He ions in the layer comprising Ni; heating the layer comprising Ni with the He ions implanted therein, the implanting and the heating creating a desired stress profile in the layer comprising Ni; following creation of the desired stress profile in the layer comprising Ni, providing a hydrocarbon source gas and a separate hydrogen source gas to a remote plasma-assisted chemical vapor deposition apparatus to facilitate graphene growth on major surfaces of the layer comprising Ni opposite the substrate and adjacent the substrate; and delaminating the layer comprising Ni from the substrate, the delamination removing the layer comprising Ni from the substrate together with graphene grown on the major surface of the layer comprising Ni opposite the substrate while leaving on the substrate graphene grown on the major surface of the layer comprising Ni adjacent the substrate, in making the graphene-inclusive thin film, wherein the heating is performed, and graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 17, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 17, further comprising forming a silicon- inclusive layer on the substrate, the layer comprising Ni being formed on the silicon-inclusive layer. Original
21-22. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a buffer layer on the substrate; forming a metal catalyst layer on the buffer layer; pre-engineering stress in the metal catalyst layer via He ion implantation and thermal annealing; following the pre-engineering of stress, growing graphene on both major surfaces of the metal catalyst layer using a remote plasma-assisted chemical vapor deposition apparatus operating in connection with separate hydrocarbon and hydrogen gasses provided at different flow rates; removing the metal catalyst layer from the substrate together with graphene grown on the major surface of the metal catalyst layer opposite the substrate, while leaving on the substrate graphene grown on the major surface of the metal catalyst layer adjacent the substrate, in making the graphene-inclusive thin film; and wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
24-26. Canceled
Canceled
A method of making a coated article including a graphene-inclusive film supported by a glass substrate, the method comprising: forming a layer comprising Si on the glass substrate; forming a layer comprising Ni on the glass substrate and on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni; and removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the glass substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the glass substrate on the layer comprising Si following the removal, in making the graphene-inclusive film, wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-inclusive coated glass article
Materials described outside the worked examples.
graphene
C
nickel layer
Ni
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 281.2–284.5 eV | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Copper-reduced graphene oxide core-shell transparent conductor for controlling light transmission and method of making the same
Patent
Atlas literature
Patent
US 10,145,005Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate; forming a layer comprising Ni on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; and mechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film, wherein the annealing is performed, and the graphene is grown, at/450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 1, wherein the plasma-related chemical vapor deposition is remote plasma-assisted chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition is plasma-enhanced chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition uses acetylene and hydrogen as separate source gasses. Original
The method of claim 1, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 1, wherein the layer comprising Ni is 200-300 nm thick. Original
The method of claim 1, wherein the mechanical removal is delamination. Original
The method of claim 1, wherein the mechanical removal removes at least some of the graphene on the major surface of the layer comprising Ni closest the substrate. Original
The method of claim 1, wherein the layer comprising Si is oxided. Original
The method of claim 1, wherein the layer comprising Si is 10-300 nm thick. Original
The method of claim 1, wherein the layer comprising Ni is formed on the substrate at least partially under vacuum, and He ion implantation also is performed at least partially under vacuum. Original
14-16. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Ni on the substrate; implanting He ions in the layer comprising Ni; heating the layer comprising Ni with the He ions implanted therein, the implanting and the heating creating a desired stress profile in the layer comprising Ni; following creation of the desired stress profile in the layer comprising Ni, providing a hydrocarbon source gas and a separate hydrogen source gas to a remote plasma-assisted chemical vapor deposition apparatus to facilitate graphene growth on major surfaces of the layer comprising Ni opposite the substrate and adjacent the substrate; and delaminating the layer comprising Ni from the substrate, the delamination removing the layer comprising Ni from the substrate together with graphene grown on the major surface of the layer comprising Ni opposite the substrate while leaving on the substrate graphene grown on the major surface of the layer comprising Ni adjacent the substrate, in making the graphene-inclusive thin film, wherein the heating is performed, and graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 17, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 17, further comprising forming a silicon- inclusive layer on the substrate, the layer comprising Ni being formed on the silicon-inclusive layer. Original
21-22. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a buffer layer on the substrate; forming a metal catalyst layer on the buffer layer; pre-engineering stress in the metal catalyst layer via He ion implantation and thermal annealing; following the pre-engineering of stress, growing graphene on both major surfaces of the metal catalyst layer using a remote plasma-assisted chemical vapor deposition apparatus operating in connection with separate hydrocarbon and hydrogen gasses provided at different flow rates; removing the metal catalyst layer from the substrate together with graphene grown on the major surface of the metal catalyst layer opposite the substrate, while leaving on the substrate graphene grown on the major surface of the metal catalyst layer adjacent the substrate, in making the graphene-inclusive thin film; and wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
24-26. Canceled
Canceled
A method of making a coated article including a graphene-inclusive film supported by a glass substrate, the method comprising: forming a layer comprising Si on the glass substrate; forming a layer comprising Ni on the glass substrate and on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni; and removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the glass substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the glass substrate on the layer comprising Si following the removal, in making the graphene-inclusive film, wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-inclusive coated glass article
Materials described outside the worked examples.
graphene
C
nickel layer
Ni
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 281.2–284.5 eV | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Copper-reduced graphene oxide core-shell transparent conductor for controlling light transmission and method of making the same
Patent
Atlas literature
Patent
US 10,145,005Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Si on the substrate; forming a layer comprising Ni on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni via plasma-related chemical vapor deposition; and mechanically removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the substrate on the layer comprising Si following the mechanical removal, in making the graphene-inclusive thin film, wherein the annealing is performed, and the graphene is grown, at/450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 1, wherein the plasma-related chemical vapor deposition is remote plasma-assisted chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition is plasma-enhanced chemical vapor deposition. Original
The method of claim 1, wherein the plasma-related chemical vapor deposition uses acetylene and hydrogen as separate source gasses. Original
The method of claim 1, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 1, wherein the layer comprising Ni is 200-300 nm thick. Original
The method of claim 1, wherein the mechanical removal is delamination. Original
The method of claim 1, wherein the mechanical removal removes at least some of the graphene on the major surface of the layer comprising Ni closest the substrate. Original
The method of claim 1, wherein the layer comprising Si is oxided. Original
The method of claim 1, wherein the layer comprising Si is 10-300 nm thick. Original
The method of claim 1, wherein the layer comprising Ni is formed on the substrate at least partially under vacuum, and He ion implantation also is performed at least partially under vacuum. Original
14-16. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a layer comprising Ni on the substrate; implanting He ions in the layer comprising Ni; heating the layer comprising Ni with the He ions implanted therein, the implanting and the heating creating a desired stress profile in the layer comprising Ni; following creation of the desired stress profile in the layer comprising Ni, providing a hydrocarbon source gas and a separate hydrogen source gas to a remote plasma-assisted chemical vapor deposition apparatus to facilitate graphene growth on major surfaces of the layer comprising Ni opposite the substrate and adjacent the substrate; and delaminating the layer comprising Ni from the substrate, the delamination removing the layer comprising Ni from the substrate together with graphene grown on the major surface of the layer comprising Ni opposite the substrate while leaving on the substrate graphene grown on the major surface of the layer comprising Ni adjacent the substrate, in making the graphene-inclusive thin film, wherein the heating is performed, and graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
The method of claim 17, wherein the layer comprising Ni is formed by e-beam deposition. Original
The method of claim 17, further comprising forming a silicon- inclusive layer on the substrate, the layer comprising Ni being formed on the silicon-inclusive layer. Original
21-22. Canceled
Canceled
A method of making a coated article including a graphene- inclusive thin film supported by a glass substrate, the method comprising: forming a buffer layer on the substrate; forming a metal catalyst layer on the buffer layer; pre-engineering stress in the metal catalyst layer via He ion implantation and thermal annealing; following the pre-engineering of stress, growing graphene on both major surfaces of the metal catalyst layer using a remote plasma-assisted chemical vapor deposition apparatus operating in connection with separate hydrocarbon and hydrogen gasses provided at different flow rates; removing the metal catalyst layer from the substrate together with graphene grown on the major surface of the metal catalyst layer opposite the substrate, while leaving on the substrate graphene grown on the major surface of the metal catalyst layer adjacent the substrate, in making the graphene-inclusive thin film; and wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the grapheme is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. Currently amended
24-26. Canceled
Canceled
A method of making a coated article including a graphene-inclusive film supported by a glass substrate, the method comprising: forming a layer comprising Si on the glass substrate; forming a layer comprising Ni on the glass substrate and on the layer comprising Si; engineering stress in the layer comprising Ni via He ion implantation and annealing; following the engineering of stress, growing graphene on both major surfaces of the layer comprising Ni; and removing the layer comprising Ni and the graphene on the major surface of the layer comprising Ni opposite the glass substrate, at least some graphene initially formed at an interface of the layer comprising Si and the layer comprising Ni remaining on the glass substrate on the layer comprising Si following the removal, in making the graphene-inclusive film, wherein the annealing is performed, and the graphene is grown, at 450-550 degrees C, the graphene is grown in 1-5 minutes, and He exposure associated with the He ion implantation is no more than 5 minutes. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene-inclusive coated glass article
Materials described outside the worked examples.
graphene
C
nickel layer
Ni
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 281.2–284.5 eV | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Copper-reduced graphene oxide core-shell transparent conductor for controlling light transmission and method of making the same
glass substrate
acetylene
C₂H₂
hydrogen
H₂
silicon oxide
SiO₂
helium ions
He
| — |
— | 40–150 W | — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–150 nm | — |
— | 250–750 W | — |
— | 4–5 eV | — |
Duration | 1–5 minutes | — |
Thickness | 200–300 nm | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 5 minutes | — |
glass substrate
acetylene
C₂H₂
hydrogen
H₂
silicon oxide
SiO₂
helium ions
He
| — |
— | 40–150 W | — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–150 nm | — |
— | 250–750 W | — |
— | 4–5 eV | — |
Duration | 1–5 minutes | — |
Thickness | 200–300 nm | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 5 minutes | — |
glass substrate
acetylene
C₂H₂
hydrogen
H₂
silicon oxide
SiO₂
helium ions
He
| — |
— | 40–150 W | — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–150 nm | — |
— | 250–750 W | — |
— | 4–5 eV | — |
Duration | 1–5 minutes | — |
Thickness | 200–300 nm | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 5 minutes | — |
glass substrate
acetylene
C₂H₂
hydrogen
H₂
silicon oxide
SiO₂
helium ions
He
| — |
— | 40–150 W | — |
Thickness | 50–500 nm | — |
Thickness | 100–300 nm | — |
Thickness | 10–300 nm | — |
Thickness | 50–150 nm | — |
— | 250–750 W | — |
— | 4–5 eV | — |
Duration | 1–5 minutes | — |
Thickness | 200–300 nm | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≥ 5 minutes | — |