Patent
US 8,766,258AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS
CHRISTOS D. DIMITRAKOPOULOS, DIRK PFEIFFER, JOSHUA T. SMITH
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 8,766,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 illustrates a flowchart of a method 400 for creating a secure device having a physical unclonable function. In particular, exemplary steps of the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A secure device having a physical unclonable function, the secure device comprising: at least one graphene layer, wherein the at least one graphene layer comprises the physical unclonable function; and a measurement circuit, wherein the measurement circuit is configured to measure at least one property of the at least one graphene layer for authenticating the secure device.
The secure device of claim 1, further comprising: a seed layer.
The secure device of claim 1, further comprising: a passivation layer. 2 PATENT Atty Dkt No Y O R₉₂₀₁₂₀₇₄₁US₁
The secure device of claim 1, further comprising: a buffer layer comprising a low-k polymer. 3 PATENT At ty Dkt No. Y O R₉₂₀₁₂₀₇₄₁US 1
The secure device of claim 1, wherein the at least one layer of graphene has been subjected to a variability enhancement comprising at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid.
The secure device of claim 1, further comprising. a source electrode; and a drain electrode, wherein the at least one graphene layer is located between the source electrode and the drain electrode.
The secure device of claim 1, wherein the measurement circuit is configured to derive a signature having one or more physical unclonable function values from the at least one property.
The secure device of claim 1, wherein the at least one property of the at least one layer of graphene that is measured by the measurement circuit comprises at least one of: a resistance. a capacitance; an impedance; an inductance; a transmittance; or a voltage response. 4 PATENT Atty Dkt. No Y O R₉₂₀₁₂₀₇₄₁US₁
A secure device having a physical unclonable function, the secure device comprising: a first graphene layer; and a second graphene layer, wherein at least one of the first graphene layer and the second graphene layer has been subjected to a variability enhancement such that a measurable property is different for each of the first graphene layer and the second graphene layer, wherein the physical unclonable function comprises at least the first graphene layer and the second graphene layer. withdrawn
(W ithdrawn) The secure device of claim 21, wherein the va ri ability enhancement comprises at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid. 23.-24. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based physical unclonable function secure device
graphene field-effect transistor (PUF device with source and drain)
Materials described outside the worked examples.
graphene
titanium oxide
TiOx
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average resistance drop with temperature increase (unpassivated graphene, 27°C to 54°C) | 14 % | graphene |
additional average resistance drop with temperature increase (unpassivated graphene, 54°C to 80°C) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,766,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 illustrates a flowchart of a method 400 for creating a secure device having a physical unclonable function. In particular, exemplary steps of the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A secure device having a physical unclonable function, the secure device comprising: at least one graphene layer, wherein the at least one graphene layer comprises the physical unclonable function; and a measurement circuit, wherein the measurement circuit is configured to measure at least one property of the at least one graphene layer for authenticating the secure device.
The secure device of claim 1, further comprising: a seed layer.
The secure device of claim 1, further comprising: a passivation layer. 2 PATENT Atty Dkt No Y O R₉₂₀₁₂₀₇₄₁US₁
The secure device of claim 1, further comprising: a buffer layer comprising a low-k polymer. 3 PATENT At ty Dkt No. Y O R₉₂₀₁₂₀₇₄₁US 1
The secure device of claim 1, wherein the at least one layer of graphene has been subjected to a variability enhancement comprising at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid.
The secure device of claim 1, further comprising. a source electrode; and a drain electrode, wherein the at least one graphene layer is located between the source electrode and the drain electrode.
The secure device of claim 1, wherein the measurement circuit is configured to derive a signature having one or more physical unclonable function values from the at least one property.
The secure device of claim 1, wherein the at least one property of the at least one layer of graphene that is measured by the measurement circuit comprises at least one of: a resistance. a capacitance; an impedance; an inductance; a transmittance; or a voltage response. 4 PATENT Atty Dkt. No Y O R₉₂₀₁₂₀₇₄₁US₁
A secure device having a physical unclonable function, the secure device comprising: a first graphene layer; and a second graphene layer, wherein at least one of the first graphene layer and the second graphene layer has been subjected to a variability enhancement such that a measurable property is different for each of the first graphene layer and the second graphene layer, wherein the physical unclonable function comprises at least the first graphene layer and the second graphene layer. withdrawn
(W ithdrawn) The secure device of claim 21, wherein the va ri ability enhancement comprises at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid. 23.-24. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based physical unclonable function secure device
graphene field-effect transistor (PUF device with source and drain)
Materials described outside the worked examples.
graphene
titanium oxide
TiOx
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average resistance drop with temperature increase (unpassivated graphene, 27°C to 54°C) | 14 % | graphene |
additional average resistance drop with temperature increase (unpassivated graphene, 54°C to 80°C) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,766,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 illustrates a flowchart of a method 400 for creating a secure device having a physical unclonable function. In particular, exemplary steps of the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A secure device having a physical unclonable function, the secure device comprising: at least one graphene layer, wherein the at least one graphene layer comprises the physical unclonable function; and a measurement circuit, wherein the measurement circuit is configured to measure at least one property of the at least one graphene layer for authenticating the secure device.
The secure device of claim 1, further comprising: a seed layer.
The secure device of claim 1, further comprising: a passivation layer. 2 PATENT Atty Dkt No Y O R₉₂₀₁₂₀₇₄₁US₁
The secure device of claim 1, further comprising: a buffer layer comprising a low-k polymer. 3 PATENT At ty Dkt No. Y O R₉₂₀₁₂₀₇₄₁US 1
The secure device of claim 1, wherein the at least one layer of graphene has been subjected to a variability enhancement comprising at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid.
The secure device of claim 1, further comprising. a source electrode; and a drain electrode, wherein the at least one graphene layer is located between the source electrode and the drain electrode.
The secure device of claim 1, wherein the measurement circuit is configured to derive a signature having one or more physical unclonable function values from the at least one property.
The secure device of claim 1, wherein the at least one property of the at least one layer of graphene that is measured by the measurement circuit comprises at least one of: a resistance. a capacitance; an impedance; an inductance; a transmittance; or a voltage response. 4 PATENT Atty Dkt. No Y O R₉₂₀₁₂₀₇₄₁US₁
A secure device having a physical unclonable function, the secure device comprising: a first graphene layer; and a second graphene layer, wherein at least one of the first graphene layer and the second graphene layer has been subjected to a variability enhancement such that a measurable property is different for each of the first graphene layer and the second graphene layer, wherein the physical unclonable function comprises at least the first graphene layer and the second graphene layer. withdrawn
(W ithdrawn) The secure device of claim 21, wherein the va ri ability enhancement comprises at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid. 23.-24. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based physical unclonable function secure device
graphene field-effect transistor (PUF device with source and drain)
Materials described outside the worked examples.
graphene
titanium oxide
TiOx
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average resistance drop with temperature increase (unpassivated graphene, 27°C to 54°C) | 14 % | graphene |
additional average resistance drop with temperature increase (unpassivated graphene, 54°C to 80°C) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,766,258Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 4 illustrates a flowchart of a method 400 for creating a secure device having a physical unclonable function. In particular, exemplary steps of the method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A secure device having a physical unclonable function, the secure device comprising: at least one graphene layer, wherein the at least one graphene layer comprises the physical unclonable function; and a measurement circuit, wherein the measurement circuit is configured to measure at least one property of the at least one graphene layer for authenticating the secure device.
The secure device of claim 1, further comprising: a seed layer.
The secure device of claim 1, further comprising: a passivation layer. 2 PATENT Atty Dkt No Y O R₉₂₀₁₂₀₇₄₁US₁
The secure device of claim 1, further comprising: a buffer layer comprising a low-k polymer. 3 PATENT At ty Dkt No. Y O R₉₂₀₁₂₀₇₄₁US 1
The secure device of claim 1, wherein the at least one layer of graphene has been subjected to a variability enhancement comprising at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid.
The secure device of claim 1, further comprising. a source electrode; and a drain electrode, wherein the at least one graphene layer is located between the source electrode and the drain electrode.
The secure device of claim 1, wherein the measurement circuit is configured to derive a signature having one or more physical unclonable function values from the at least one property.
The secure device of claim 1, wherein the at least one property of the at least one layer of graphene that is measured by the measurement circuit comprises at least one of: a resistance. a capacitance; an impedance; an inductance; a transmittance; or a voltage response. 4 PATENT Atty Dkt. No Y O R₉₂₀₁₂₀₇₄₁US₁
A secure device having a physical unclonable function, the secure device comprising: a first graphene layer; and a second graphene layer, wherein at least one of the first graphene layer and the second graphene layer has been subjected to a variability enhancement such that a measurable property is different for each of the first graphene layer and the second graphene layer, wherein the physical unclonable function comprises at least the first graphene layer and the second graphene layer. withdrawn
(W ithdrawn) The secure device of claim 21, wherein the va ri ability enhancement comprises at least one of: an exposure to ozone; or an exposure to perylene tetracarboxylic acid. 23.-24. withdrawn
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based physical unclonable function secure device
graphene field-effect transistor (PUF device with source and drain)
Materials described outside the worked examples.
graphene
titanium oxide
TiOx
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average resistance drop with temperature increase (unpassivated graphene, 27°C to 54°C) | 14 % | graphene |
additional average resistance drop with temperature increase (unpassivated graphene, 54°C to 80°C) |
Related documents with shared materials, methods, properties, or citations.
graphene device array (substrate/die/IC) as described in detailed description
aluminum oxide
Al₂O₃
aluminum oxynitride
AlON
nitrogen dioxide
NO₂
passivation layer (high-k dielectric)
hafnium oxide
HfO₂
tantalum oxide
Ta₂O₅
titanium dioxide
TiO₂
silicon nitride
Si₃N₄
polyacrylate film
inorganic oxide
poly-para-xylene polymer (parylene)
low-k polymer
ozone
O₃
perylene tetracarboxylic acid
graphene |
resistance variation over temperature range after vacuum anneal (unpassivated graphene, 29°C to 80°C) | 5 % | graphene |
average resistance increase after one week in nitrogen environment (unpassivated graphene) | 87 ohm/device | graphene |
fraction of passivated graphene devices with less than 26 ohm variation after one week in nitrogen environment | 66 % | graphene |
Thickness | 10–20 nm | — |
graphene device array (substrate/die/IC) as described in detailed description
aluminum oxide
Al₂O₃
aluminum oxynitride
AlON
nitrogen dioxide
NO₂
passivation layer (high-k dielectric)
hafnium oxide
HfO₂
tantalum oxide
Ta₂O₅
titanium dioxide
TiO₂
silicon nitride
Si₃N₄
polyacrylate film
inorganic oxide
poly-para-xylene polymer (parylene)
low-k polymer
ozone
O₃
perylene tetracarboxylic acid
graphene |
resistance variation over temperature range after vacuum anneal (unpassivated graphene, 29°C to 80°C) | 5 % | graphene |
average resistance increase after one week in nitrogen environment (unpassivated graphene) | 87 ohm/device | graphene |
fraction of passivated graphene devices with less than 26 ohm variation after one week in nitrogen environment | 66 % | graphene |
Thickness | 10–20 nm | — |
graphene device array (substrate/die/IC) as described in detailed description
aluminum oxide
Al₂O₃
aluminum oxynitride
AlON
nitrogen dioxide
NO₂
passivation layer (high-k dielectric)
hafnium oxide
HfO₂
tantalum oxide
Ta₂O₅
titanium dioxide
TiO₂
silicon nitride
Si₃N₄
polyacrylate film
inorganic oxide
poly-para-xylene polymer (parylene)
low-k polymer
ozone
O₃
perylene tetracarboxylic acid
graphene |
resistance variation over temperature range after vacuum anneal (unpassivated graphene, 29°C to 80°C) | 5 % | graphene |
average resistance increase after one week in nitrogen environment (unpassivated graphene) | 87 ohm/device | graphene |
fraction of passivated graphene devices with less than 26 ohm variation after one week in nitrogen environment | 66 % | graphene |
Thickness | 10–20 nm | — |
graphene device array (substrate/die/IC) as described in detailed description
aluminum oxide
Al₂O₃
aluminum oxynitride
AlON
nitrogen dioxide
NO₂
passivation layer (high-k dielectric)
hafnium oxide
HfO₂
tantalum oxide
Ta₂O₅
titanium dioxide
TiO₂
silicon nitride
Si₃N₄
polyacrylate film
inorganic oxide
poly-para-xylene polymer (parylene)
low-k polymer
ozone
O₃
perylene tetracarboxylic acid
graphene |
resistance variation over temperature range after vacuum anneal (unpassivated graphene, 29°C to 80°C) | 5 % | graphene |
average resistance increase after one week in nitrogen environment (unpassivated graphene) | 87 ohm/device | graphene |
fraction of passivated graphene devices with less than 26 ohm variation after one week in nitrogen environment | 66 % | graphene |
Thickness | 10–20 nm | — |