Van der Waals Engineering of Valley Polarization in WSe2 via Kagome V2O3 Monolayer Heterostructure through Magnetic Proximity Effect

Fazle Subhan; Kiduk Kim; Jaeyoung Kim; Guangzhao Qin; Luqman Ali; Joonkyung Jang

doi:10.48550/arxiv.2606.15666

Paper details

Research paper

Computational DFTComputational Monte Carlo

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Fazle Subhan, Kiduk Kim, Jaeyoung Kim, Guangzhao Qin et al.

2025·arXiv:2606.15666

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

1 property

Simulated Supercell DftWSe₂Studied Material

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

2 properties

Simulated Supercell DftV₂O₃Studied Material

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

6 properties

Simulated Supercell DftWSe₂Studied MaterialV₂O₃Studied Material

Materials

WSe₂

Studied Material

Also known as

2H-WSe₂WSe₂ monolayer

Variables

phase= 2H

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Van der Waals Engineering of Valley Polarization in WSe2 via Kagome V2O3 Monolayer Heterostructure through Magnetic Proximity Effect | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Lattice Constant A	V₂O₃ monolayer lattice constant a	6.193angstrom	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Space Group	space group	P6/MMM	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Lattice Constant A	WSe₂ monolayer lattice constant a	3.32angstrom	WSe₂	Relaxed 2H WSe₂ monolayer used as the isolated reference sys		—
Binding Energy	heterostructure binding energy	-133.58meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Binding Energy	heterostructure binding energy per atom	-7.86meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Valley Splitting	WSe₂ valley splitting in V₂O₃/WSe₂ heterostructure	10.41meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Curie Temperature	Curie temperature	500K	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Magnetic Anisotropy Energy	out-of-plane magnetic anisotropy energy	0.31meV	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Electric Field Step	external electric field step	0.1V/angstrom	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Optical Band Gap	band gap	0.03eV	—	—	—	—
Optical Band Gap	band gap	0.02eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Lattice Constant A	V₂O₃ monolayer lattice constant a	6.193angstrom	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Space Group	space group	P6/MMM	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Lattice Constant A	WSe₂ monolayer lattice constant a	3.32angstrom	WSe₂	Relaxed 2H WSe₂ monolayer used as the isolated reference sys		—
Binding Energy	heterostructure binding energy	-133.58meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Binding Energy	heterostructure binding energy per atom	-7.86meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Valley Splitting	WSe₂ valley splitting in V₂O₃/WSe₂ heterostructure	10.41meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Curie Temperature	Curie temperature	500K	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Magnetic Anisotropy Energy	out-of-plane magnetic anisotropy energy	0.31meV	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Electric Field Step	external electric field step	0.1V/angstrom	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Optical Band Gap	band gap	0.03eV	—	—	—	—
Optical Band Gap	band gap	0.02eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Lattice Constant A	V₂O₃ monolayer lattice constant a	6.193angstrom	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Space Group	space group	P6/MMM	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Lattice Constant A	WSe₂ monolayer lattice constant a	3.32angstrom	WSe₂	Relaxed 2H WSe₂ monolayer used as the isolated reference sys		—
Binding Energy	heterostructure binding energy	-133.58meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Binding Energy	heterostructure binding energy per atom	-7.86meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Valley Splitting	WSe₂ valley splitting in V₂O₃/WSe₂ heterostructure	10.41meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Curie Temperature	Curie temperature	500K	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Magnetic Anisotropy Energy	out-of-plane magnetic anisotropy energy	0.31meV	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Electric Field Step	external electric field step	0.1V/angstrom	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Optical Band Gap	band gap	0.03eV	—	—	—	—
Optical Band Gap	band gap	0.02eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Lattice Constant A	V₂O₃ monolayer lattice constant a	6.193angstrom	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Space Group	space group	P6/MMM	V₂O₃	Relaxed V₂O₃ monolayer used as the ferromagnetic oxide refer		—
Xrd Lattice Constant A	WSe₂ monolayer lattice constant a	3.32angstrom	WSe₂	Relaxed 2H WSe₂ monolayer used as the isolated reference sys		—
Binding Energy	heterostructure binding energy	-133.58meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Binding Energy	heterostructure binding energy per atom	-7.86meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Valley Splitting	WSe₂ valley splitting in V₂O₃/WSe₂ heterostructure	10.41meV	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Curie Temperature	Curie temperature	500K	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Magnetic Anisotropy Energy	out-of-plane magnetic anisotropy energy	0.31meV	V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Electric Field Step	external electric field step	0.1V/angstrom	WSe₂ V₂O₃	vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for v		—
Optical Band Gap	band gap	0.03eV	—	—	—	—
Optical Band Gap	band gap	0.02eV	—	—	—	—

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Van der Waals Engineering of Valley Polarization in WSe₂ via Kagome V₂O₃ Monolayer Heterostructure through Magnetic Proximity Effect

Samples

Relaxed 2H WSe₂ monolayer used as the isolated reference system in the DFT study.

Relaxed V₂O₃ monolayer used as the ferromagnetic oxide reference system in the DFT study.

vdW V₂O₃/WSe₂ heterostructure supercell studied by DFT for valley splitting, magnetic anisotropy, charge redistribution, and binding energy.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations