Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Joachim Dahl Thomsen; Yaxian Wang; Henrik Flyvbjerg; Eugene Park; Kenji Watanabe; Takashi Taniguchi; Prineha Narang; Frances M. Ross

doi:10.1002/adma.202403989

Paper details

Research paper

Experimental CharacterizationComputational DFT

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Joachim Dahl Thomsen, Yaxian Wang, Henrik Flyvbjerg, Eugene Park et al.

arXiv preprint·2024·10.1002/adma.202403989·arXiv:2403.02494

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

1 preparation1 characterization4 properties5 figures

ExperimentalWSe₂Studied MaterialBNSubstrate / Dielectric

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

1 preparation1 characterization1 property2 figures

ExperimentalWSe₂Studied MaterialBNSubstrate / Dielectric

Materials

WSe₂

Studied Material

Also known as

monolayer WSe₂

Variables

dimensionality= monolayer

studied material

hexagonal boron nitride

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Xrd Space Group	twist angle from diffraction	23.9° twist angle between the two BN crystals	WSe₂ BN	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	3.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	1.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	higher than BN/BN case; interface-specific value not stated in text excerpt	W	BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm	—
Diffusion Coefficient	W diffusion coefficient	time-dependent but not numerically specified in excerpt	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Formation Energy	W in B vacancy	6.75eV	W BN	—	—
Formation Energy	W in N vacancy	9.65eV	W BN	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Space Group	twist angle from diffraction	23.9° twist angle between the two BN crystals	WSe₂ BN	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	3.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	1.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	higher than BN/BN case; interface-specific value not stated in text excerpt	W	BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm	—
Diffusion Coefficient	W diffusion coefficient	time-dependent but not numerically specified in excerpt	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Formation Energy	W in B vacancy	6.75eV	W BN	—	—
Formation Energy	W in N vacancy	9.65eV	W BN	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Space Group	twist angle from diffraction	23.9° twist angle between the two BN crystals	WSe₂ BN	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	3.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	1.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	higher than BN/BN case; interface-specific value not stated in text excerpt	W	BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm	—
Diffusion Coefficient	W diffusion coefficient	time-dependent but not numerically specified in excerpt	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Formation Energy	W in B vacancy	6.75eV	W BN	—	—
Formation Energy	W in N vacancy	9.65eV	W BN	—	—

Properties

Type	Label	Value	Material	Sample	Source
Xrd Space Group	twist angle from diffraction	23.9° twist angle between the two BN crystals	WSe₂ BN	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	3.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	1.5Å2/s	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Diffusion Coefficient	W diffusion coefficient	higher than BN/BN case; interface-specific value not stated in text excerpt	W	BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm	—
Diffusion Coefficient	W diffusion coefficient	time-dependent but not numerically specified in excerpt	W	BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated	—
Formation Energy	W in B vacancy	6.75eV	W BN	—	—
Formation Energy	W in N vacancy	9.65eV	W BN	—	—

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Direct Visualization of Defect-Controlled Diffusion in van der Waals Gaps

Samples

BN/WSe₂/BN heterostructure with monolayer WSe₂ encapsulated by ~2 nm thick BN on both sides; W atoms observed at BN/WSe₂ and BN/BN interfaces.

BN/WSe₂ heterostructure with monolayer WSe₂ placed on ~2 nm thick BN and exposed to vacuum at the top surface; used to study BN/vacuum interface diffusion.

Materials

Why these are connected

Processing

Characterization

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Processing

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Processing

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