Abstract

Semiconducting nanowire lasers (NWLs) constitute nanometer-scale modular and tunable light sources hence an essential component for integrated opto-electronics. However, improving and optimizing NWL operation requires characterization of their near-field and dynamics at the nanometer scale, which is hampered by the light diffraction limit. In this article, we show how to non-perturbatively measure the absolute number of photons in the nanolaser cavity above the lasing threshold with sub-picosecond resolution using a GaN nanowire nanolaser, as well as map the lasing mode spatial profile at the nanoscale. This technique, based on the simultaneous measurements of the photon induced near-field electron microscopy (PINEM) and the photons far-field, allows for the complete nanoscale and time-resolved characterization of a NWL in operation while monitoring its macroscopic optical properties.

Abstract

Semiconducting nanowire lasers (NWLs) constitute nanometer-scale modular and tunable light sources hence an essential component for integrated opto-electronics. However, improving and optimizing NWL operation requires characterization of their near-field and dynamics at the nanometer scale, which is hampered by the light diffraction limit. In this article, we show how to non-perturbatively measure the absolute number of photons in the nanolaser cavity above the lasing threshold with sub-picosecond resolution using a GaN nanowire nanolaser, as well as map the lasing mode spatial profile at the nanoscale. This technique, based on the simultaneous measurements of the photon induced near-field electron microscopy (PINEM) and the photons far-field, allows for the complete nanoscale and time-resolved characterization of a NWL in operation while monitoring its macroscopic optical properties.

Abstract

Semiconducting nanowire lasers (NWLs) constitute nanometer-scale modular and tunable light sources hence an essential component for integrated opto-electronics. However, improving and optimizing NWL operation requires characterization of their near-field and dynamics at the nanometer scale, which is hampered by the light diffraction limit. In this article, we show how to non-perturbatively measure the absolute number of photons in the nanolaser cavity above the lasing threshold with sub-picosecond resolution using a GaN nanowire nanolaser, as well as map the lasing mode spatial profile at the nanoscale. This technique, based on the simultaneous measurements of the photon induced near-field electron microscopy (PINEM) and the photons far-field, allows for the complete nanoscale and time-resolved characterization of a NWL in operation while monitoring its macroscopic optical properties.

Abstract

Semiconducting nanowire lasers (NWLs) constitute nanometer-scale modular and tunable light sources hence an essential component for integrated opto-electronics. However, improving and optimizing NWL operation requires characterization of their near-field and dynamics at the nanometer scale, which is hampered by the light diffraction limit. In this article, we show how to non-perturbatively measure the absolute number of photons in the nanolaser cavity above the lasing threshold with sub-picosecond resolution using a GaN nanowire nanolaser, as well as map the lasing mode spatial profile at the nanoscale. This technique, based on the simultaneous measurements of the photon induced near-field electron microscopy (PINEM) and the photons far-field, allows for the complete nanoscale and time-resolved characterization of a NWL in operation while monitoring its macroscopic optical properties.