Research paperTheoreticalComputational Kinetic ModelCarrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level DefectsShanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong et al.arXiv·2025·10.48550/arxiv.2502.16846·arXiv:2502.16846AbstractThe paper rederives carrier recombination in semiconductors with multi-level defects using coupled capture-and-emission balance equations. It shows that omitting defect-level carrier emission can produce incorrect charge-state distributions and cause the recombination coefficient A to depend nonlinearly on excess carrier density, motivating an A(n)BC reformulation of the traditional ABC model.Read more
Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.1 propertySimulatedGaNStudied MaterialVGa-ON defect in GaNStudied MaterialExpand
Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.1 propertySimulatedCsPbI₃Studied MaterialPbI antisite defect in CsPbI₃Studied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelCarrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level DefectsShanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong et al.arXiv·2025·10.48550/arxiv.2502.16846·arXiv:2502.16846AbstractThe paper rederives carrier recombination in semiconductors with multi-level defects using coupled capture-and-emission balance equations. It shows that omitting defect-level carrier emission can produce incorrect charge-state distributions and cause the recombination coefficient A to depend nonlinearly on excess carrier density, motivating an A(n)BC reformulation of the traditional ABC model.Read more
Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.1 propertySimulatedGaNStudied MaterialVGa-ON defect in GaNStudied MaterialExpand
Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.1 propertySimulatedCsPbI₃Studied MaterialPbI antisite defect in CsPbI₃Studied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelCarrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level DefectsShanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong et al.arXiv·2025·10.48550/arxiv.2502.16846·arXiv:2502.16846AbstractThe paper rederives carrier recombination in semiconductors with multi-level defects using coupled capture-and-emission balance equations. It shows that omitting defect-level carrier emission can produce incorrect charge-state distributions and cause the recombination coefficient A to depend nonlinearly on excess carrier density, motivating an A(n)BC reformulation of the traditional ABC model.Read more
Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.1 propertySimulatedGaNStudied MaterialVGa-ON defect in GaNStudied MaterialExpand
Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.1 propertySimulatedCsPbI₃Studied MaterialPbI antisite defect in CsPbI₃Studied MaterialExpand
Research paperTheoreticalComputational Kinetic ModelCarrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level DefectsShanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong et al.arXiv·2025·10.48550/arxiv.2502.16846·arXiv:2502.16846AbstractThe paper rederives carrier recombination in semiconductors with multi-level defects using coupled capture-and-emission balance equations. It shows that omitting defect-level carrier emission can produce incorrect charge-state distributions and cause the recombination coefficient A to depend nonlinearly on excess carrier density, motivating an A(n)BC reformulation of the traditional ABC model.Read more
Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.1 propertySimulatedGaNStudied MaterialVGa-ON defect in GaNStudied MaterialExpand
Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.1 propertySimulatedCsPbI₃Studied MaterialPbI antisite defect in CsPbI₃Studied MaterialExpand