Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Shanshan Wang; Menglin Huang; Su-Huai Wei; Xin-Gao Gong; Shiyou Chen

doi:10.48550/arxiv.2502.16846

Paper details

Research paper

TheoreticalComputational Kinetic Model

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Shanshan Wang, Menglin Huang, Su-Huai Wei, Xin-Gao Gong et al.

arXiv·2025·10.48550/arxiv.2502.16846·arXiv:2502.16846

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

1 property

SimulatedGaNStudied MaterialVGa-ON defect in GaNStudied Material

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

1 property

SimulatedCsPbI₃Studied MaterialPbI antisite defect in CsPbI₃Studied Material

Materials

GaN

Studied Material

studied material

VGa-ON defect in GaN

Studied Material

Also known as

VGa-ON

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Recombination Coefficient A	A coefficient	100000000s⁻¹	GaN VGa-ON defect in GaN	Multi-level defect system VGa-ON in GaN used in the carrier		—
Recombination Coefficient A	A coefficient	100000000s⁻¹	CsPbI₃ PbI antisite defect in CsPbI₃	Multi-level defect system PbI antisite in CsPbI₃ used in the		—
Optical Band Gap	band gap	0.38eV	—	—	—	—
Optical Band Gap	band gap	2.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Recombination Coefficient A	A coefficient	100000000s⁻¹	GaN VGa-ON defect in GaN	Multi-level defect system VGa-ON in GaN used in the carrier		—
Recombination Coefficient A	A coefficient	100000000s⁻¹	CsPbI₃ PbI antisite defect in CsPbI₃	Multi-level defect system PbI antisite in CsPbI₃ used in the		—
Optical Band Gap	band gap	0.38eV	—	—	—	—
Optical Band Gap	band gap	2.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Recombination Coefficient A	A coefficient	100000000s⁻¹	GaN VGa-ON defect in GaN	Multi-level defect system VGa-ON in GaN used in the carrier		—
Recombination Coefficient A	A coefficient	100000000s⁻¹	CsPbI₃ PbI antisite defect in CsPbI₃	Multi-level defect system PbI antisite in CsPbI₃ used in the		—
Optical Band Gap	band gap	0.38eV	—	—	—	—
Optical Band Gap	band gap	2.42eV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Recombination Coefficient A	A coefficient	100000000s⁻¹	GaN VGa-ON defect in GaN	Multi-level defect system VGa-ON in GaN used in the carrier		—
Recombination Coefficient A	A coefficient	100000000s⁻¹	CsPbI₃ PbI antisite defect in CsPbI₃	Multi-level defect system PbI antisite in CsPbI₃ used in the		—
Optical Band Gap	band gap	0.38eV	—	—	—	—
Optical Band Gap	band gap	2.42eV	—	—	—	—

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects

Samples

Multi-level defect system VGa-ON in GaN used in the carrier recombination analysis.

Multi-level defect system PbI antisite in CsPbI₃ used in the carrier recombination analysis.

Materials

Why these are connected

Properties

Simulations

Properties

Simulations

Properties

Simulations

Properties

Simulations