Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations26 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | Γ exciton | 1.8472eV | — | |||
| PL Peak | XX,Y exciton | 1.8007eV | — | |||
| PL Peak | XZ exciton | 1.7843eV | — | |||
| PL Peak | Γ exciton | 1.751eV | — | |||
| PL Peak | XX,Y exciton | 1.73eV | — | |||
| PL Peak | XZ exciton | 1.6992eV | — | |||
| Pl Peak Shift | XX,Y redshift from Γ | 47meV | — | |||
| Pl Peak Shift | XZ redshift from Γ | 63meV | — | |||
| Optical Band Gap | Γ exciton transition energy at 4.8 K | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy at 4.8 K | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy at 4.8 K | 1.7843eV | — | |||
| Optical Band Gap | Γ exciton transition energy (experiment) | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy (experiment) | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy (experiment) | 1.7843eV | — | |||
| Pl Peak Shift | localization energy lower bound | 6meV | — | |||
| Pl Peak Shift | localization energy upper bound | 8meV | — | |||
| PL Peak | Γ exciton at 4.8 K (calculated) | 1.8472eV | — | |||
| PL Peak | XX,Y exciton at 4.8 K (calculated) | 1.8007eV | — | |||
| PL Peak | XZ exciton at 4.8 K (calculated) | 1.7843eV | — | |||
| PL Peak | Γ exciton at 300 K (calculated) | 1.751eV | — | |||
| PL Peak | XX,Y exciton at 300 K (calculated) | 1.73eV | — | |||
| PL Peak | XZ exciton at 300 K (calculated) | 1.6992eV | — | |||
| Pl Peak Shift | Varshni α for Γ state | 0.000797eV/K² | — | |||
| Pl Peak Shift | Varshni β for Γ state | 399K | — | |||
| Pl Peak Shift | Varshni α for XZ state | 0.000671eV/K² | — | |||
| Pl Peak Shift | Varshni β for XZ state | 425K | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Simultaneous anti-bunched and super-bunched photons from a GaAs Quantum dot in a dielectric metasurface
Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices
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Tunable nonlinear excitonic optical response in biased bilayer graphene
Anomalous dispersion via dissipative coupling in a quantum well exciton-polariton microcavity
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations26 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | Γ exciton | 1.8472eV | — | |||
| PL Peak | XX,Y exciton | 1.8007eV | — | |||
| PL Peak | XZ exciton | 1.7843eV | — | |||
| PL Peak | Γ exciton | 1.751eV | — | |||
| PL Peak | XX,Y exciton | 1.73eV | — | |||
| PL Peak | XZ exciton | 1.6992eV | — | |||
| Pl Peak Shift | XX,Y redshift from Γ | 47meV | — | |||
| Pl Peak Shift | XZ redshift from Γ | 63meV | — | |||
| Optical Band Gap | Γ exciton transition energy at 4.8 K | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy at 4.8 K | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy at 4.8 K | 1.7843eV | — | |||
| Optical Band Gap | Γ exciton transition energy (experiment) | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy (experiment) | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy (experiment) | 1.7843eV | — | |||
| Pl Peak Shift | localization energy lower bound | 6meV | — | |||
| Pl Peak Shift | localization energy upper bound | 8meV | — | |||
| PL Peak | Γ exciton at 4.8 K (calculated) | 1.8472eV | — | |||
| PL Peak | XX,Y exciton at 4.8 K (calculated) | 1.8007eV | — | |||
| PL Peak | XZ exciton at 4.8 K (calculated) | 1.7843eV | — | |||
| PL Peak | Γ exciton at 300 K (calculated) | 1.751eV | — | |||
| PL Peak | XX,Y exciton at 300 K (calculated) | 1.73eV | — | |||
| PL Peak | XZ exciton at 300 K (calculated) | 1.6992eV | — | |||
| Pl Peak Shift | Varshni α for Γ state | 0.000797eV/K² | — | |||
| Pl Peak Shift | Varshni β for Γ state | 399K | — | |||
| Pl Peak Shift | Varshni α for XZ state | 0.000671eV/K² | — | |||
| Pl Peak Shift | Varshni β for XZ state | 425K | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Simultaneous anti-bunched and super-bunched photons from a GaAs Quantum dot in a dielectric metasurface
Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Tunable nonlinear excitonic optical response in biased bilayer graphene
Anomalous dispersion via dissipative coupling in a quantum well exciton-polariton microcavity
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations26 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | Γ exciton | 1.8472eV | — | |||
| PL Peak | XX,Y exciton | 1.8007eV | — | |||
| PL Peak | XZ exciton | 1.7843eV | — | |||
| PL Peak | Γ exciton | 1.751eV | — | |||
| PL Peak | XX,Y exciton | 1.73eV | — | |||
| PL Peak | XZ exciton | 1.6992eV | — | |||
| Pl Peak Shift | XX,Y redshift from Γ | 47meV | — | |||
| Pl Peak Shift | XZ redshift from Γ | 63meV | — | |||
| Optical Band Gap | Γ exciton transition energy at 4.8 K | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy at 4.8 K | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy at 4.8 K | 1.7843eV | — | |||
| Optical Band Gap | Γ exciton transition energy (experiment) | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy (experiment) | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy (experiment) | 1.7843eV | — | |||
| Pl Peak Shift | localization energy lower bound | 6meV | — | |||
| Pl Peak Shift | localization energy upper bound | 8meV | — | |||
| PL Peak | Γ exciton at 4.8 K (calculated) | 1.8472eV | — | |||
| PL Peak | XX,Y exciton at 4.8 K (calculated) | 1.8007eV | — | |||
| PL Peak | XZ exciton at 4.8 K (calculated) | 1.7843eV | — | |||
| PL Peak | Γ exciton at 300 K (calculated) | 1.751eV | — | |||
| PL Peak | XX,Y exciton at 300 K (calculated) | 1.73eV | — | |||
| PL Peak | XZ exciton at 300 K (calculated) | 1.6992eV | — | |||
| Pl Peak Shift | Varshni α for Γ state | 0.000797eV/K² | — | |||
| Pl Peak Shift | Varshni β for Γ state | 399K | — | |||
| Pl Peak Shift | Varshni α for XZ state | 0.000671eV/K² | — | |||
| Pl Peak Shift | Varshni β for XZ state | 425K | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Simultaneous anti-bunched and super-bunched photons from a GaAs Quantum dot in a dielectric metasurface
Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Tunable nonlinear excitonic optical response in biased bilayer graphene
Anomalous dispersion via dissipative coupling in a quantum well exciton-polariton microcavity
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 characterizations26 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | Γ exciton | 1.8472eV | — | |||
| PL Peak | XX,Y exciton | 1.8007eV | — | |||
| PL Peak | XZ exciton | 1.7843eV | — | |||
| PL Peak | Γ exciton | 1.751eV | — | |||
| PL Peak | XX,Y exciton | 1.73eV | — | |||
| PL Peak | XZ exciton | 1.6992eV | — | |||
| Pl Peak Shift | XX,Y redshift from Γ | 47meV | — | |||
| Pl Peak Shift | XZ redshift from Γ | 63meV | — | |||
| Optical Band Gap | Γ exciton transition energy at 4.8 K | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy at 4.8 K | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy at 4.8 K | 1.7843eV | — | |||
| Optical Band Gap | Γ exciton transition energy (experiment) | 1.8472eV | — | |||
| Optical Band Gap | XX,Y exciton transition energy (experiment) | 1.8007eV | — | |||
| Optical Band Gap | XZ exciton transition energy (experiment) | 1.7843eV | — | |||
| Pl Peak Shift | localization energy lower bound | 6meV | — | |||
| Pl Peak Shift | localization energy upper bound | 8meV | — | |||
| PL Peak | Γ exciton at 4.8 K (calculated) | 1.8472eV | — | |||
| PL Peak | XX,Y exciton at 4.8 K (calculated) | 1.8007eV | — | |||
| PL Peak | XZ exciton at 4.8 K (calculated) | 1.7843eV | — | |||
| PL Peak | Γ exciton at 300 K (calculated) | 1.751eV | — | |||
| PL Peak | XX,Y exciton at 300 K (calculated) | 1.73eV | — | |||
| PL Peak | XZ exciton at 300 K (calculated) | 1.6992eV | — | |||
| Pl Peak Shift | Varshni α for Γ state | 0.000797eV/K² | — | |||
| Pl Peak Shift | Varshni β for Γ state | 399K | — | |||
| Pl Peak Shift | Varshni α for XZ state | 0.000671eV/K² | — | |||
| Pl Peak Shift | Varshni β for XZ state | 425K | — |
Related documents with shared materials, methods, properties, or citations.
Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
Mechanisms of Afterglow and Thermally Stimulated Luminescence in UV-irradiated InP/ZnS Quantum Dots
On-chip Hong-Ou-Mandel interference from separate quantum dot emitters in an integrated circuit
Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots
Simultaneous anti-bunched and super-bunched photons from a GaAs Quantum dot in a dielectric metasurface
Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale
On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen Implantation
Tunable nonlinear excitonic optical response in biased bilayer graphene
Anomalous dispersion via dissipative coupling in a quantum well exciton-polariton microcavity
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