Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations

Ashutosh Krishna Amaram; Saurabh Kharwar; Tarun Kumar Agarwal

doi:10.1109/iedm.2017.8268324

Paper

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Research paper

Computational MDComputational DFTTheoretical

Investigation of resistive switching in Au/MoS₂/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations

Ashutosh Krishna Amaram, Saurabh Kharwar, Tarun Kumar Agarwal

2024·10.1109/iedm.2017.8268324·arXiv:2407.11437

Samples

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Initial relaxed Au/MoS₂/Au memristor structure with a monolayer 2H-MoS₂ sandwiched between Au(111) contacts and a single sulfur vacancy.

2 properties

SimulatedMoS₂Studied MaterialAuCapping Or Contact

Low-resistance state configuration obtained by MD after applying negative electric field, showing a gold semi-filament extending toward/through the MoS₂ layer near the sulfur vacancy.

4 properties

SimulatedMoS₂Studied MaterialAuCapping Or Contact

High-resistance state configuration obtained after reversing the electric field, with gold atoms pulled back toward the top electrode and the conductive channel broken.

3 properties

SimulatedMoS₂Studied MaterialAuCapping Or Contact

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