Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ab initio supercell simulation of a Bi-monolayer MoS₂ interface with a 2x2 Bi lattice stacked on a 3x3 monolayer 2H-MoS₂ lattice separated by 3.5 Å.
6 properties
Simulated Supercell DftMoS₂Studied MaterialBiCapping Or Contact
Modeled semimetal contact device structure for quantum transport with Bi contact on monolayer MoS2, a top dielectric layer, and a bottom oxide dielectric layer.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ab initio supercell simulation of a Bi-monolayer MoS₂ interface with a 2x2 Bi lattice stacked on a 3x3 monolayer 2H-MoS₂ lattice separated by 3.5 Å.
6 properties
Simulated Supercell DftMoS₂Studied MaterialBiCapping Or Contact
Modeled semimetal contact device structure for quantum transport with Bi contact on monolayer MoS2, a top dielectric layer, and a bottom oxide dielectric layer.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ab initio supercell simulation of a Bi-monolayer MoS₂ interface with a 2x2 Bi lattice stacked on a 3x3 monolayer 2H-MoS₂ lattice separated by 3.5 Å.
6 properties
Simulated Supercell DftMoS₂Studied MaterialBiCapping Or Contact
Modeled semimetal contact device structure for quantum transport with Bi contact on monolayer MoS2, a top dielectric layer, and a bottom oxide dielectric layer.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Ab initio supercell simulation of a Bi-monolayer MoS₂ interface with a 2x2 Bi lattice stacked on a 3x3 monolayer 2H-MoS₂ lattice separated by 3.5 Å.
6 properties
Simulated Supercell DftMoS₂Studied MaterialBiCapping Or Contact
Modeled semimetal contact device structure for quantum transport with Bi contact on monolayer MoS2, a top dielectric layer, and a bottom oxide dielectric layer.
