Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties4 figures
1 preparation1 characterization7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Dimension | junction width W | 3um | — | |||
| Sample Dimension | junction length L | 600nm | — | |||
| Sample Dimension | junction width W | 4um | — | |||
| Sample Dimension | junction length L | 800nm | — | |||
| Sample Dimension | hBN flake thickness | 30nm | — | |||
| Sample Dimension | SiO₂ oxide thickness | 300nm | — | |||
| Transport Modulation Efficiency | βBG,n | 118nA/V | — | |||
| Charge Neutrality Point | VCNPBG | -6.3V | — | |||
| Tip Sample Distance | vacuum tip height dvac | 70nm | — | |||
| Tip Sample Distance | tip-to-graphene distance d | 100nm | — | |||
| Map Area | SGM scan area | 3.2 × 3.2µm² | — |
Related documents with shared materials, methods, properties, or citations.
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
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Building 3D superconductor-based Josephson junctions using a via transfer approach
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Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties4 figures
1 preparation1 characterization7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Dimension | junction width W | 3um | — | |||
| Sample Dimension | junction length L | 600nm | — | |||
| Sample Dimension | junction width W | 4um | — | |||
| Sample Dimension | junction length L | 800nm | — | |||
| Sample Dimension | hBN flake thickness | 30nm | — | |||
| Sample Dimension | SiO₂ oxide thickness | 300nm | — | |||
| Transport Modulation Efficiency | βBG,n | 118nA/V | — | |||
| Charge Neutrality Point | VCNPBG | -6.3V | — | |||
| Tip Sample Distance | vacuum tip height dvac | 70nm | — | |||
| Tip Sample Distance | tip-to-graphene distance d | 100nm | — | |||
| Map Area | SGM scan area | 3.2 × 3.2µm² | — |
Related documents with shared materials, methods, properties, or citations.
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Toward single-photon detection with superconducting niobium diselenide nanowires
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
Building 3D superconductor-based Josephson junctions using a via transfer approach
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Ferroelectricity in twisted double bilayer graphene
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Coherent detection of the oscillating acoustoelectric effect in graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties4 figures
1 preparation1 characterization7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Dimension | junction width W | 3um | — | |||
| Sample Dimension | junction length L | 600nm | — | |||
| Sample Dimension | junction width W | 4um | — | |||
| Sample Dimension | junction length L | 800nm | — | |||
| Sample Dimension | hBN flake thickness | 30nm | — | |||
| Sample Dimension | SiO₂ oxide thickness | 300nm | — | |||
| Transport Modulation Efficiency | βBG,n | 118nA/V | — | |||
| Charge Neutrality Point | VCNPBG | -6.3V | — | |||
| Tip Sample Distance | vacuum tip height dvac | 70nm | — | |||
| Tip Sample Distance | tip-to-graphene distance d | 100nm | — | |||
| Map Area | SGM scan area | 3.2 × 3.2µm² | — |
Related documents with shared materials, methods, properties, or citations.
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Toward single-photon detection with superconducting niobium diselenide nanowires
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
Building 3D superconductor-based Josephson junctions using a via transfer approach
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Ferroelectricity in twisted double bilayer graphene
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Coherent detection of the oscillating acoustoelectric effect in graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations9 properties4 figures
1 preparation1 characterization7 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Dimension | junction width W | 3um | — | |||
| Sample Dimension | junction length L | 600nm | — | |||
| Sample Dimension | junction width W | 4um | — | |||
| Sample Dimension | junction length L | 800nm | — | |||
| Sample Dimension | hBN flake thickness | 30nm | — | |||
| Sample Dimension | SiO₂ oxide thickness | 300nm | — | |||
| Transport Modulation Efficiency | βBG,n | 118nA/V | — | |||
| Charge Neutrality Point | VCNPBG | -6.3V | — | |||
| Tip Sample Distance | vacuum tip height dvac | 70nm | — | |||
| Tip Sample Distance | tip-to-graphene distance d | 100nm | — | |||
| Map Area | SGM scan area | 3.2 × 3.2µm² | — |
Related documents with shared materials, methods, properties, or citations.
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Toward single-photon detection with superconducting niobium diselenide nanowires
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
Building 3D superconductor-based Josephson junctions using a via transfer approach
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Ferroelectricity in twisted double bilayer graphene
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Coherent detection of the oscillating acoustoelectric effect in graphene
