Thermal analysis of GaN-based photonic membranes for optoelectronics

Wilken Seemann; Mahmoud Elhajhasan; Julian Themann; Katharina Dudde; Guillaume Würsch; Jana Lierath; Gordon Callsen; Joachim Ciers; Åsa Haglund; Nakib H. Protik; Giuseppe Romano; Raphaël Butté; Jean-François Carlin; Nicolas Grandjean

doi:10.1103/fh33-jjpq

Paper details

Research paper

Experimental CharacterizationComputational Phonon

Thermal analysis of GaN-based photonic membranes for optoelectronics

Wilken Seemann, Mahmoud Elhajhasan, Julian Themann, Katharina Dudde et al.

arXiv·2024·10.1103/fh33-jjpq·arXiv:2410.12515

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

3 preparations4 characterizations2 properties1 figure

ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

3 preparations2 characterizations1 property1 figure

ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

3 preparations2 characterizations1 property1 figure

ExperimentalGaNStudied MaterialIn0.15Ga0.85NStudied MaterialAl0.82In0.18NStudied MaterialGaNStudied Material

Materials

GaN

Studied Material

Also known as

wurtzite GaN

studied material

In0.15Ga0.85N

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Thermal analysis of GaN-based photonic membranes for optoelectronics | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Thermal Conductivity In Plane	κ_in-plane (best membrane)	165+16-14W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside;		—
Thermal Conductivity In Plane	κ_in-plane (ab initio BTE)	177W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside; Photonic GaN-based membrane sample 2 with a smooth backside Photonic GaN-based membrane sample 3 with altered layer sequ		—
Raman Peak	regex-detected Raman peak	567cm⁻¹	—	—	—	—
Raman Peak	regex-detected Raman peak	568cm⁻¹	—	—	—	—
PL Peak	regex-detected PL peak	532nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Thermal Conductivity In Plane	κ_in-plane (best membrane)	165+16-14W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside;		—
Thermal Conductivity In Plane	κ_in-plane (ab initio BTE)	177W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside; Photonic GaN-based membrane sample 2 with a smooth backside Photonic GaN-based membrane sample 3 with altered layer sequ		—
Raman Peak	regex-detected Raman peak	567cm⁻¹	—	—	—	—
Raman Peak	regex-detected Raman peak	568cm⁻¹	—	—	—	—
PL Peak	regex-detected PL peak	532nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Thermal Conductivity In Plane	κ_in-plane (best membrane)	165+16-14W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside;		—
Thermal Conductivity In Plane	κ_in-plane (ab initio BTE)	177W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside; Photonic GaN-based membrane sample 2 with a smooth backside Photonic GaN-based membrane sample 3 with altered layer sequ		—
Raman Peak	regex-detected Raman peak	567cm⁻¹	—	—	—	—
Raman Peak	regex-detected Raman peak	568cm⁻¹	—	—	—	—
PL Peak	regex-detected PL peak	532nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Thermal Conductivity In Plane	κ_in-plane (best membrane)	165+16-14W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside;		—
Thermal Conductivity In Plane	κ_in-plane (ab initio BTE)	177W m⁻¹ K⁻¹	GaN	Photonic GaN-based membrane sample 1 with a rough backside; Photonic GaN-based membrane sample 2 with a smooth backside Photonic GaN-based membrane sample 3 with altered layer sequ		—
Raman Peak	regex-detected Raman peak	567cm⁻¹	—	—	—	—
Raman Peak	regex-detected Raman peak	568cm⁻¹	—	—	—	—
PL Peak	regex-detected PL peak	532nm	—	—	—	—

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Thermal analysis of GaN-based photonic membranes for optoelectronics

Samples

Photonic GaN-based membrane sample 1 with a rough backside; main membrane consists largely of c-plane GaN and includes an In0.15Ga0.85N quantum-well stack as a built-in light source. The membrane is fabricated on sapphire after patterning and sacrificial-layer removal.

Photonic GaN-based membrane sample 2 with a smooth backside and the same membrane platform as sample 1, fabricated from a sapphire-supported heterostructure.

Photonic GaN-based membrane sample 3 with altered layer sequence/backside morphology relative to samples 1 and 2.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations