FIGS. 1 and 2 are simplified diagrams of conventional LED devices.

FIG. 2. A substrate 4, such as sapphire, has an n-type gallium 50 nitride (GaN) layer 6 formed on its surface, typically with intermediate functional layer 5 …

FIGS. 3 to 11 are simplified diagrams illustrating various stages of a method of fabricating a microLED array accord- ing to an example of the present invention.

FIG. 4, device 400 shows that the metal 410 required to form the P type ohmic contact and the etch mask 420 is deposited and patterned. This metal 410 is …

FIG. 5, device 500 shows that the etch mask 510 required for the etch of the N contact frame has been added. This allows the entire structure to be etched …

FIG. 6A, device 601 is shown after the device etch has been completed, and the required wet chemistry/plasma clean up procedures have been completed. As shown, …

FIG. 7, device 700 shows that the contact metal 710 into the N-type region has been deposited so that the top of the metals 710 aligns with the top of the …

FIG. 8, device 800 shows that a layer of dielectric 810, such as SiO₂ or SiNx or the like, has been deposited covering all of the structures and passivating …

FIG. 9, device 900 shows that a layer of planarizing 25 resist 910 has been applied covering all of the structures. In

FIG. 10, device 1000 shows that the planarized resist 910 is etched back using oxygen plasma, resulting in etched planarized resist 911, to expose the tops of …

FIG. 11, device 1100 shows that the passivation layer 810 is opened, resulting in opened passivation layer 811, on the top of the metal contacts 410 and 710 …

FIGS. 1 and 2 are simplified diagrams of conventional LED devices.

FIG. 2. A substrate 4, such as sapphire, has an n-type gallium 50 nitride (GaN) layer 6 formed on its surface, typically with intermediate functional layer 5 …

FIGS. 3 to 11 are simplified diagrams illustrating various stages of a method of fabricating a microLED array accord- ing to an example of the present invention.

FIG. 4, device 400 shows that the metal 410 required to form the P type ohmic contact and the etch mask 420 is deposited and patterned. This metal 410 is …

FIG. 5, device 500 shows that the etch mask 510 required for the etch of the N contact frame has been added. This allows the entire structure to be etched …

FIG. 6A, device 601 is shown after the device etch has been completed, and the required wet chemistry/plasma clean up procedures have been completed. As shown, …

FIG. 7, device 700 shows that the contact metal 710 into the N-type region has been deposited so that the top of the metals 710 aligns with the top of the …

FIG. 8, device 800 shows that a layer of dielectric 810, such as SiO₂ or SiNx or the like, has been deposited covering all of the structures and passivating …

FIG. 9, device 900 shows that a layer of planarizing 25 resist 910 has been applied covering all of the structures. In

FIG. 10, device 1000 shows that the planarized resist 910 is etched back using oxygen plasma, resulting in etched planarized resist 911, to expose the tops of …

FIG. 11, device 1100 shows that the passivation layer 810 is opened, resulting in opened passivation layer 811, on the top of the metal contacts 410 and 710 …

FIGS. 1 and 2 are simplified diagrams of conventional LED devices.

FIG. 2. A substrate 4, such as sapphire, has an n-type gallium 50 nitride (GaN) layer 6 formed on its surface, typically with intermediate functional layer 5 …

FIGS. 3 to 11 are simplified diagrams illustrating various stages of a method of fabricating a microLED array accord- ing to an example of the present invention.

FIG. 4, device 400 shows that the metal 410 required to form the P type ohmic contact and the etch mask 420 is deposited and patterned. This metal 410 is …

FIG. 5, device 500 shows that the etch mask 510 required for the etch of the N contact frame has been added. This allows the entire structure to be etched …

FIG. 6A, device 601 is shown after the device etch has been completed, and the required wet chemistry/plasma clean up procedures have been completed. As shown, …

FIG. 7, device 700 shows that the contact metal 710 into the N-type region has been deposited so that the top of the metals 710 aligns with the top of the …

FIG. 8, device 800 shows that a layer of dielectric 810, such as SiO₂ or SiNx or the like, has been deposited covering all of the structures and passivating …

FIG. 9, device 900 shows that a layer of planarizing 25 resist 910 has been applied covering all of the structures. In

FIG. 10, device 1000 shows that the planarized resist 910 is etched back using oxygen plasma, resulting in etched planarized resist 911, to expose the tops of …

FIG. 11, device 1100 shows that the passivation layer 810 is opened, resulting in opened passivation layer 811, on the top of the metal contacts 410 and 710 …

FIGS. 1 and 2 are simplified diagrams of conventional LED devices.

FIG. 2. A substrate 4, such as sapphire, has an n-type gallium 50 nitride (GaN) layer 6 formed on its surface, typically with intermediate functional layer 5 …

FIGS. 3 to 11 are simplified diagrams illustrating various stages of a method of fabricating a microLED array accord- ing to an example of the present invention.

FIG. 4, device 400 shows that the metal 410 required to form the P type ohmic contact and the etch mask 420 is deposited and patterned. This metal 410 is …

FIG. 5, device 500 shows that the etch mask 510 required for the etch of the N contact frame has been added. This allows the entire structure to be etched …

FIG. 6A, device 601 is shown after the device etch has been completed, and the required wet chemistry/plasma clean up procedures have been completed. As shown, …

FIG. 7, device 700 shows that the contact metal 710 into the N-type region has been deposited so that the top of the metals 710 aligns with the top of the …

FIG. 8, device 800 shows that a layer of dielectric 810, such as SiO₂ or SiNx or the like, has been deposited covering all of the structures and passivating …

FIG. 9, device 900 shows that a layer of planarizing 25 resist 910 has been applied covering all of the structures. In

FIG. 10, device 1000 shows that the planarized resist 910 is etched back using oxygen plasma, resulting in etched planarized resist 911, to expose the tops of …

FIG. 11, device 1100 shows that the passivation layer 810 is opened, resulting in opened passivation layer 811, on the top of the metal contacts 410 and 710 …