Abstract

Defect colour centres in hexagonal boron nitride (hBN) are promising for spin qubits, single-photon sources, quantum sensing, and ultraviolet LEDs, but deterministic localization is required for scalable devices. The paper demonstrates localization of hBN colour-centre emission by growing patterned Al₂O₃ dielectric layers directly on graphene via atomic layer deposition (ALD), then depositing hBN flakes on the patterned structures. Emission is quenched on graphene and maintained on Al₂O₃ pillars that act as charge-transfer barriers, enabling localized emitters suitable for electrically controlled device architectures.

Abstract

Defect colour centres in hexagonal boron nitride (hBN) are promising for spin qubits, single-photon sources, quantum sensing, and ultraviolet LEDs, but deterministic localization is required for scalable devices. The paper demonstrates localization of hBN colour-centre emission by growing patterned Al₂O₃ dielectric layers directly on graphene via atomic layer deposition (ALD), then depositing hBN flakes on the patterned structures. Emission is quenched on graphene and maintained on Al₂O₃ pillars that act as charge-transfer barriers, enabling localized emitters suitable for electrically controlled device architectures.

Abstract

Defect colour centres in hexagonal boron nitride (hBN) are promising for spin qubits, single-photon sources, quantum sensing, and ultraviolet LEDs, but deterministic localization is required for scalable devices. The paper demonstrates localization of hBN colour-centre emission by growing patterned Al₂O₃ dielectric layers directly on graphene via atomic layer deposition (ALD), then depositing hBN flakes on the patterned structures. Emission is quenched on graphene and maintained on Al₂O₃ pillars that act as charge-transfer barriers, enabling localized emitters suitable for electrically controlled device architectures.

Abstract

Defect colour centres in hexagonal boron nitride (hBN) are promising for spin qubits, single-photon sources, quantum sensing, and ultraviolet LEDs, but deterministic localization is required for scalable devices. The paper demonstrates localization of hBN colour-centre emission by growing patterned Al₂O₃ dielectric layers directly on graphene via atomic layer deposition (ALD), then depositing hBN flakes on the patterned structures. Emission is quenched on graphene and maintained on Al₂O₃ pillars that act as charge-transfer barriers, enabling localized emitters suitable for electrically controlled device architectures.