Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Bejoys Jacob; Filipe Camarneiro; Jérôme Borme; Oleksandr Bondarchuk; Jana B. Nieder; Bruno Romeira

doi:10.1021/acsaelm.2c00195

Paper

Atlas literature

Research paper

Experimental Characterization

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Bejoys Jacob, Filipe Camarneiro, Jérôme Borme, Oleksandr Bondarchuk et al.

2025·10.1021/acsaelm.2c00195·arXiv:2206.15358

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Dry-etched GaAs/AlGaAs nanopillars without post-etch passivation treatment.

2 characterizations2 properties4 figures

ExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied Material

GaAs/AlGaAs nanopillars sulfurized and encapsulated with silicon nitride deposited by low-frequency PECVD.

2 preparations4 characterizations5 properties6 figures

ExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialSi₃N₄Capping Or Contact

GaAs/AlGaAs nanopillars sulfurized and encapsulated with silicon nitride deposited by high-frequency PECVD.

2 preparations3 characterizations1 property5 figures

ExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialSi₃N₄Capping Or Contact

GaAs/AlGaAs nanopillars passivated with low-frequency PECVD silicon nitride without sulfurization pre-treatment.

2 preparations3 characterizations1 property5 figures

ExperimentalGaAs/AlGaAsStudied MaterialGaAsStudied MaterialAlGaAsStudied MaterialSi₃N₄Capping Or Contact

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