Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots

Paper details

Research paper

Experimental GrowthExperimental Characterization

R. A. Barcan, I. Samaras, K. Barr, G. Juska et al.

2025·10.1103/fps4-vb8c·arXiv:2503.05400

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization2 properties3 figures

ExperimentalIn0.25Ga0.75AsStudied MaterialGaAsSubstrate / Dielectric

In0.25Ga0.75As

Studied Material

Also known as

InGaAs quantum dotssite-controlled InGaAs pyramidal QDs

Variables

indium_fraction= 0.25

gallium_fraction= 0.75

studied material

Related documents with shared materials, methods, properties, or citations.

Optical pumping and initialization of a hole spin in site-controlled InGaAs pyramidal quantum dots | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Active Layer Thickness	nominal QD thickness	0.85nm	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—
Pl Peak Intensity	X+ saturation power	250pW	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—

Type	Label	Value	Material	Sample	Condition	Source
Active Layer Thickness	nominal QD thickness	0.85nm	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—
Pl Peak Intensity	X+ saturation power	250pW	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—

Type	Label	Value	Material	Sample	Condition	Source
Active Layer Thickness	nominal QD thickness	0.85nm	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—
Pl Peak Intensity	X+ saturation power	250pW	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—

Type	Label	Value	Material	Sample	Condition	Source
Active Layer Thickness	nominal QD thickness	0.85nm	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—
Pl Peak Intensity	X+ saturation power	250pW	In0.25Ga0.75As	Site-controlled In0.25Ga0.75As quantum dots grown in tetrahe		—