Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moire Period | moiré length | 13.44nm | — | |||
| Twist Angle | twist angle | 1.05deg | — | |||
| Pseudogap Size | flat-band spacing at empty state | 23meV | — | |||
| Pseudogap Size | flat-band spacing at charge neutral point | 49meV | — | |||
| Superconducting Gap | s-wave fit 2Δ' | 2.2meV | — | |||
| Superconducting Gap | nodal fit 2Δ' | 3.06meV | — | |||
| Pseudogap Feature Filling | filling with GSM-LDOS coincidence | -2.63 | — |
Related documents with shared materials, methods, properties, or citations.
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Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2
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Emergent intersubband-plasmon-polaritons of Dirac electrons under one-dimensional superlattices
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P-TYPE GRAPHENE BASE TRANSISTOR
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Photocurrent Nanoscopy of Quantum Hall Bulk
Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moire Period | moiré length | 13.44nm | — | |||
| Twist Angle | twist angle | 1.05deg | — | |||
| Pseudogap Size | flat-band spacing at empty state | 23meV | — | |||
| Pseudogap Size | flat-band spacing at charge neutral point | 49meV | — | |||
| Superconducting Gap | s-wave fit 2Δ' | 2.2meV | — | |||
| Superconducting Gap | nodal fit 2Δ' | 3.06meV | — | |||
| Pseudogap Feature Filling | filling with GSM-LDOS coincidence | -2.63 | — |
Related documents with shared materials, methods, properties, or citations.
Strong Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene
Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene
Residual quantum coherent electron transport in doped graphene leads
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2
Ferroelectricity in twisted double bilayer graphene
Emergent intersubband-plasmon-polaritons of Dirac electrons under one-dimensional superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
P-TYPE GRAPHENE BASE TRANSISTOR
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Photocurrent Nanoscopy of Quantum Hall Bulk
Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moire Period | moiré length | 13.44nm | — | |||
| Twist Angle | twist angle | 1.05deg | — | |||
| Pseudogap Size | flat-band spacing at empty state | 23meV | — | |||
| Pseudogap Size | flat-band spacing at charge neutral point | 49meV | — | |||
| Superconducting Gap | s-wave fit 2Δ' | 2.2meV | — | |||
| Superconducting Gap | nodal fit 2Δ' | 3.06meV | — | |||
| Pseudogap Feature Filling | filling with GSM-LDOS coincidence | -2.63 | — |
Related documents with shared materials, methods, properties, or citations.
Strong Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene
Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene
Residual quantum coherent electron transport in doped graphene leads
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2
Ferroelectricity in twisted double bilayer graphene
Emergent intersubband-plasmon-polaritons of Dirac electrons under one-dimensional superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
P-TYPE GRAPHENE BASE TRANSISTOR
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Photocurrent Nanoscopy of Quantum Hall Bulk
Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization7 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moire Period | moiré length | 13.44nm | — | |||
| Twist Angle | twist angle | 1.05deg | — | |||
| Pseudogap Size | flat-band spacing at empty state | 23meV | — | |||
| Pseudogap Size | flat-band spacing at charge neutral point | 49meV | — | |||
| Superconducting Gap | s-wave fit 2Δ' | 2.2meV | — | |||
| Superconducting Gap | nodal fit 2Δ' | 3.06meV | — | |||
| Pseudogap Feature Filling | filling with GSM-LDOS coincidence | -2.63 | — |
Related documents with shared materials, methods, properties, or citations.
Strong Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene
Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene
Residual quantum coherent electron transport in doped graphene leads
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2
Ferroelectricity in twisted double bilayer graphene
Emergent intersubband-plasmon-polaritons of Dirac electrons under one-dimensional superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
P-TYPE GRAPHENE BASE TRANSISTOR
Ferroelectric switching of interfacial dipoles in α-RuCl3/graphene heterostructure
Photocurrent Nanoscopy of Quantum Hall Bulk
Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride