Research paperExperimental CharacterizationEdge dependence of the Josephson current in the quantum Hall regimeSeong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi et al.2025·10.1103/m3lt-6cnc·arXiv:2503.12817AbstractThe observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed h/2e magnetic interference period and the lack of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.Read more
Graphene Josephson junction with native edge (NE GJJ), encapsulated in hBN and contacted by MoRe superconducting electrodes.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Graphene Josephson junction with etched edge (EE GJJ), obtained by plasma etching of a previously fabricated device.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Edge-free graphene Josephson junction (EF GJJ), encapsulated hBN/graphene/hBN heterostructure with superconducting contacts.4 preparations1 characterization1 figureExperimentalCStudied MaterialExpand
Graphite gate-defined edge graphene Josephson junction (GGDE GJJ), with electrostatically defined boundaries using a graphite gate.4 preparationsExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationEdge dependence of the Josephson current in the quantum Hall regimeSeong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi et al.2025·10.1103/m3lt-6cnc·arXiv:2503.12817AbstractThe observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed h/2e magnetic interference period and the lack of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.Read more
Graphene Josephson junction with native edge (NE GJJ), encapsulated in hBN and contacted by MoRe superconducting electrodes.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Graphene Josephson junction with etched edge (EE GJJ), obtained by plasma etching of a previously fabricated device.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Edge-free graphene Josephson junction (EF GJJ), encapsulated hBN/graphene/hBN heterostructure with superconducting contacts.4 preparations1 characterization1 figureExperimentalCStudied MaterialExpand
Graphite gate-defined edge graphene Josephson junction (GGDE GJJ), with electrostatically defined boundaries using a graphite gate.4 preparationsExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationEdge dependence of the Josephson current in the quantum Hall regimeSeong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi et al.2025·10.1103/m3lt-6cnc·arXiv:2503.12817AbstractThe observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed h/2e magnetic interference period and the lack of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.Read more
Graphene Josephson junction with native edge (NE GJJ), encapsulated in hBN and contacted by MoRe superconducting electrodes.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Graphene Josephson junction with etched edge (EE GJJ), obtained by plasma etching of a previously fabricated device.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Edge-free graphene Josephson junction (EF GJJ), encapsulated hBN/graphene/hBN heterostructure with superconducting contacts.4 preparations1 characterization1 figureExperimentalCStudied MaterialExpand
Graphite gate-defined edge graphene Josephson junction (GGDE GJJ), with electrostatically defined boundaries using a graphite gate.4 preparationsExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationEdge dependence of the Josephson current in the quantum Hall regimeSeong Jang, Geon-Hyoung Park, Kenji Watanabe, Takashi Taniguchi et al.2025·10.1103/m3lt-6cnc·arXiv:2503.12817AbstractThe observation of Josephson current in the quantum Hall regime has attracted considerable attention, revealing the coexistence of two seemingly incompatible phases: the quantum Hall and superconducting states. However, the mechanism underlying the Josephson current remains unclear because of the observed h/2e magnetic interference period and the lack of precisely quantized Hall plateaus. To address this issue, we investigate the edge dependence of the Josephson current in graphene Josephson junctions operating in the quantum Hall regime. By systematically comparing devices with native, etched, edge-free, and gate-defined edges, we demonstrate that the Josephson current is confined to the physical edges and is highly sensitive to specific edge configurations. Our findings provide direct evidence that counter-propagating quantum Hall edge states mediate Andreev bound states, enabling Josephson coupling. These results clarify the underlying mechanism of Josephson current in the quantum Hall regime and offer new strategies for engineering superconducting hybrid devices.Read more
Graphene Josephson junction with native edge (NE GJJ), encapsulated in hBN and contacted by MoRe superconducting electrodes.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Graphene Josephson junction with etched edge (EE GJJ), obtained by plasma etching of a previously fabricated device.4 preparations2 characterizations2 figuresExperimentalCStudied MaterialExpand
Edge-free graphene Josephson junction (EF GJJ), encapsulated hBN/graphene/hBN heterostructure with superconducting contacts.4 preparations1 characterization1 figureExperimentalCStudied MaterialExpand
Graphite gate-defined edge graphene Josephson junction (GGDE GJJ), with electrostatically defined boundaries using a graphite gate.4 preparationsExperimentalCStudied MaterialExpand