| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.5 | — | |||
| Raman Intensity Ratio | I(D)/I(G) | 0.3333333333333333 | — | |||
| Raman Mode Correlation Slope | 2D vs G peak position slope | 2.46 | — | |||
| Substrate Thickness | hBN layer thickness | 62nm | — | |||
| Substrate Thickness | SiO₂ back-gate dielectric thickness | 500nm | — | |||
| Strain Barrier Length | strained region length | 150nm | — | |||
| Cavity Length | effective cavity length from Fabry-Perot oscillations | 360nm | — | |||
| Resistance Peak Gate Voltage | ancillary peak gate voltage | 62V | — | |||
| Chemical Potential | ancillary peak chemical potential | 163meV | — | |||
| Resistance Peak Gate Voltage | Dirac point gate voltage | 2V | — | |||
| Energy Separation | Fabry-Perot oscillation spacing | 10meV | — | |||
| Temperature | thermal broadening scale for 95% interference visibility drop | 35K | — | |||
| Strain | best-fit strain | 0.065 | — | |||
| Strained Barrier Length | best-fit barrier length | 62nm | — | |||
| Orientation Angle | angle between transport direction and zigzag direction | 9.4deg | — | |||
| Strain | strain range | 0.06 | — | |||
| Strain | strain range | 0.08 | — |
Charge transport through the multiple end zigzag edge states of armchair graphene nanoribbons and heterojunctions
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.5 | — | |||
| Raman Intensity Ratio | I(D)/I(G) | 0.3333333333333333 | — | |||
| Raman Mode Correlation Slope | 2D vs G peak position slope | 2.46 | — | |||
| Substrate Thickness | hBN layer thickness | 62nm | — | |||
| Substrate Thickness | SiO₂ back-gate dielectric thickness | 500nm | — | |||
| Strain Barrier Length | strained region length | 150nm | — | |||
| Cavity Length | effective cavity length from Fabry-Perot oscillations | 360nm | — | |||
| Resistance Peak Gate Voltage | ancillary peak gate voltage | 62V | — | |||
| Chemical Potential | ancillary peak chemical potential | 163meV | — | |||
| Resistance Peak Gate Voltage | Dirac point gate voltage | 2V | — | |||
| Energy Separation | Fabry-Perot oscillation spacing | 10meV | — | |||
| Temperature | thermal broadening scale for 95% interference visibility drop | 35K | — | |||
| Strain | best-fit strain | 0.065 | — | |||
| Strained Barrier Length | best-fit barrier length | 62nm | — | |||
| Orientation Angle | angle between transport direction and zigzag direction | 9.4deg | — | |||
| Strain | strain range | 0.06 | — | |||
| Strain | strain range | 0.08 | — |
Charge transport through the multiple end zigzag edge states of armchair graphene nanoribbons and heterojunctions
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.5 | — | |||
| Raman Intensity Ratio | I(D)/I(G) | 0.3333333333333333 | — | |||
| Raman Mode Correlation Slope | 2D vs G peak position slope | 2.46 | — | |||
| Substrate Thickness | hBN layer thickness | 62nm | — | |||
| Substrate Thickness | SiO₂ back-gate dielectric thickness | 500nm | — | |||
| Strain Barrier Length | strained region length | 150nm | — | |||
| Cavity Length | effective cavity length from Fabry-Perot oscillations | 360nm | — | |||
| Resistance Peak Gate Voltage | ancillary peak gate voltage | 62V | — | |||
| Chemical Potential | ancillary peak chemical potential | 163meV | — | |||
| Resistance Peak Gate Voltage | Dirac point gate voltage | 2V | — | |||
| Energy Separation | Fabry-Perot oscillation spacing | 10meV | — | |||
| Temperature | thermal broadening scale for 95% interference visibility drop | 35K | — | |||
| Strain | best-fit strain | 0.065 | — | |||
| Strained Barrier Length | best-fit barrier length | 62nm | — | |||
| Orientation Angle | angle between transport direction and zigzag direction | 9.4deg | — | |||
| Strain | strain range | 0.06 | — | |||
| Strain | strain range | 0.08 | — |
Charge transport through the multiple end zigzag edge states of armchair graphene nanoribbons and heterojunctions
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Intensity Ratio | I(2D)/I(G) | 2.5 | — | |||
| Raman Intensity Ratio | I(D)/I(G) | 0.3333333333333333 | — | |||
| Raman Mode Correlation Slope | 2D vs G peak position slope | 2.46 | — | |||
| Substrate Thickness | hBN layer thickness | 62nm | — | |||
| Substrate Thickness | SiO₂ back-gate dielectric thickness | 500nm | — | |||
| Strain Barrier Length | strained region length | 150nm | — | |||
| Cavity Length | effective cavity length from Fabry-Perot oscillations | 360nm | — | |||
| Resistance Peak Gate Voltage | ancillary peak gate voltage | 62V | — | |||
| Chemical Potential | ancillary peak chemical potential | 163meV | — | |||
| Resistance Peak Gate Voltage | Dirac point gate voltage | 2V | — | |||
| Energy Separation | Fabry-Perot oscillation spacing | 10meV | — | |||
| Temperature | thermal broadening scale for 95% interference visibility drop | 35K | — | |||
| Strain | best-fit strain | 0.065 | — | |||
| Strained Barrier Length | best-fit barrier length | 62nm | — | |||
| Orientation Angle | angle between transport direction and zigzag direction | 9.4deg | — | |||
| Strain | strain range | 0.06 | — | |||
| Strain | strain range | 0.08 | — |
Charge transport through the multiple end zigzag edge states of armchair graphene nanoribbons and heterojunctions
