Research paper
TheoreticalComputational Kinetic ModelEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations10 properties5 figures
9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 0.714eV | — | |||
| Optical Band Gap | band gap | 0.722eV | — | |||
| Raman Peak | EC | 0.3668eV | — | |||
| Raman Peak | EV | -0.3668eV | — | |||
| Raman Peak | ΣC,L | 7.13meV | — | |||
| Raman Peak | ΣV,L | -7.13meV | — | |||
| Raman Peak | ΣC,L | 7µeV | — | |||
| Raman Peak | ΣV,L | -7µeV | — | |||
| Raman Peak | εC,B | 0.337eV | — | |||
| Raman Peak | εC,A | 0.393eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.253eV | — | |||
| Raman Peak | ΣV,L | -0.268eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.249eV | — | |||
| Raman Peak | ΣV,L | -0.263eV | — | |||
| Transport | peak-to-valley ratio | 8.7 | — |
Related documents with shared materials, methods, properties, or citations.
Thermoelectric Properties of Armchair Graphene Nanoribbons with Array Characteristics
Electronic structures and transport properties of cove-edged graphene nanoribbons
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices
Tuning the topological winding number by rolling up graphene
All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations10 properties5 figures
9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 0.714eV | — | |||
| Optical Band Gap | band gap | 0.722eV | — | |||
| Raman Peak | EC | 0.3668eV | — | |||
| Raman Peak | EV | -0.3668eV | — | |||
| Raman Peak | ΣC,L | 7.13meV | — | |||
| Raman Peak | ΣV,L | -7.13meV | — | |||
| Raman Peak | ΣC,L | 7µeV | — | |||
| Raman Peak | ΣV,L | -7µeV | — | |||
| Raman Peak | εC,B | 0.337eV | — | |||
| Raman Peak | εC,A | 0.393eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.253eV | — | |||
| Raman Peak | ΣV,L | -0.268eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.249eV | — | |||
| Raman Peak | ΣV,L | -0.263eV | — | |||
| Transport | peak-to-valley ratio | 8.7 | — |
Related documents with shared materials, methods, properties, or citations.
Thermoelectric Properties of Armchair Graphene Nanoribbons with Array Characteristics
Electronic structures and transport properties of cove-edged graphene nanoribbons
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices
Tuning the topological winding number by rolling up graphene
All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations10 properties5 figures
9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 0.714eV | — | |||
| Optical Band Gap | band gap | 0.722eV | — | |||
| Raman Peak | EC | 0.3668eV | — | |||
| Raman Peak | EV | -0.3668eV | — | |||
| Raman Peak | ΣC,L | 7.13meV | — | |||
| Raman Peak | ΣV,L | -7.13meV | — | |||
| Raman Peak | ΣC,L | 7µeV | — | |||
| Raman Peak | ΣV,L | -7µeV | — | |||
| Raman Peak | εC,B | 0.337eV | — | |||
| Raman Peak | εC,A | 0.393eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.253eV | — | |||
| Raman Peak | ΣV,L | -0.268eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.249eV | — | |||
| Raman Peak | ΣV,L | -0.263eV | — | |||
| Transport | peak-to-valley ratio | 8.7 | — |
Related documents with shared materials, methods, properties, or citations.
Thermoelectric Properties of Armchair Graphene Nanoribbons with Array Characteristics
Electronic structures and transport properties of cove-edged graphene nanoribbons
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices
Tuning the topological winding number by rolling up graphene
All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations10 properties5 figures
9 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | band gap | 0.714eV | — | |||
| Optical Band Gap | band gap | 0.722eV | — | |||
| Raman Peak | EC | 0.3668eV | — | |||
| Raman Peak | EV | -0.3668eV | — | |||
| Raman Peak | ΣC,L | 7.13meV | — | |||
| Raman Peak | ΣV,L | -7.13meV | — | |||
| Raman Peak | ΣC,L | 7µeV | — | |||
| Raman Peak | ΣV,L | -7µeV | — | |||
| Raman Peak | εC,B | 0.337eV | — | |||
| Raman Peak | εC,A | 0.393eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.253eV | — | |||
| Raman Peak | ΣV,L | -0.268eV | — | |||
| Raman Peak | ΣC,S | 76.4meV | — | |||
| Raman Peak | ΣV,S | -81.7meV | — | |||
| Raman Peak | ΣC,L | 0.249eV | — | |||
| Raman Peak | ΣV,L | -0.263eV | — | |||
| Transport | peak-to-valley ratio | 8.7 | — |
Related documents with shared materials, methods, properties, or citations.
Thermoelectric Properties of Armchair Graphene Nanoribbons with Array Characteristics
Electronic structures and transport properties of cove-edged graphene nanoribbons
Environmental Breakdown of Topological Interface States in Armchair Graphene Nanoribbon Heterostructures
Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices
Tuning the topological winding number by rolling up graphene
All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle