Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS2

Yichun Pan; Liqing Zhu; Zheng Wang; Weihang Zhou

doi:10.48550/arxiv.2506.15287

Paper details

Research paper

Experimental Characterization

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Yichun Pan, Liqing Zhu, Zheng Wang, Weihang Zhou

2025·10.48550/arxiv.2506.15287·arXiv:2506.15287

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

1 preparation2 characterizations6 properties2 figures

ExperimentalWS₂Studied MaterialSiO₂Substrate / Dielectric

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

1 preparation2 characterizations6 properties2 figures

ExperimentalhBNStudied MaterialWS₂Studied MaterialSiO₂Substrate / Dielectric

Materials

WS₂

Studied Material

Also known as

monolayer WS₂

Variables

dimensionality= monolayer

studied material

hexagonal boron nitride

hBN

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS2 | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X₀	618.96nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
PL Peak	X-	626.94nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	fast recovery	0.734s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	slow recovery	12.886s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	fast recovery	0.311s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	slow recovery	25.372s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	fast component	0.22s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	slow component	4.02s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X₀	618.96nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
PL Peak	X-	626.94nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	fast recovery	0.734s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	slow recovery	12.886s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	fast recovery	0.311s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	slow recovery	25.372s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	fast component	0.22s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	slow component	4.02s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X₀	618.96nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
PL Peak	X-	626.94nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	fast recovery	0.734s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	slow recovery	12.886s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	fast recovery	0.311s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	slow recovery	25.372s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	fast component	0.22s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	slow component	4.02s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X₀	618.96nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
PL Peak	X-	626.94nm	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	fast recovery	0.734s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	slow recovery	12.886s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s	—
Hole Recovery Time Constant	fast recovery	0.311s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Recovery Time Constant	slow recovery	25.372s	WS₂	Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	fast component	0.22s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—
Hole Fwhm Recovery Time Constant	slow component	4.02s	WS₂	Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ s Monolayer WS₂ flakes on clean SiO₂ substrate with a portion	—

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Optical Control of Fluorescence Spatial Hole Burning Effect in Monolayer WS₂

Samples

Bare monolayer WS₂ flakes mechanically exfoliated from WS₂ single crystals and transferred onto clean SiO₂ substrate.

Monolayer WS₂ flakes on clean SiO₂ substrate with a portion covered by thin hexagonal boron nitride for control experiments.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties