Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Jonah Herzog-Arbeitman; Yuzhi Wang; Jiaxuan Liu; Pok Man Tam; Ziyue Qi; Yujin Jia; Dmitri K. Efetov; Oskar Vafek; Nicolas Regnault; Hongming Weng; Quansheng Wu; B. Andrei Bernevig; Jiabin Yu

doi:10.1103/PhysRevLett.106.236804

Paper details

Research paper

Computational DFTTheoreticalComputational MultiscaleBand Structure

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Jonah Herzog-Arbeitman, Yuzhi Wang, Jiaxuan Liu, Pok Man Tam et al.

arXiv preprint·2023·10.1103/PhysRevLett.106.236804·arXiv:2311.12920

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

1 characterization6 figures

Simulated Supercell DftCStudied MaterialBNStudied Material

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

1 characterization6 figures

Simulated Supercell DftCStudied MaterialBNStudied Material

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

1 characterization6 figures

Simulated Supercell DftCStudied MaterialBNStudied Material

Materials

rhombohedral graphene

Studied Material

Also known as

RnGrhombohedral n-layer graphenegraphene

Variables

layer_number= n=3-7

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices | Matter42 Literature

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Samples

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, modeled for the experimental twist angle near 0.76715°; representative of the RnG/hBN structures with stacking configuration ξ = 0.

Relaxed rhombohedral graphene on nearly aligned hBN moiré superlattice, stacking configuration ξ = 1.

Doubly aligned encapsulated device hBN/RnG/hBN with nearly aligned hBN layers and parallel moiré patterns.

Materials

Why these are connected

Characterization

Simulations

Characterization

Simulations

Characterization

Simulations

Characterization

Simulations