Research paper
TheoreticalComputed PLComputed Phonon| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | bright exciton | bright excitonic peak | — | |||
| Absorption Peak | main excitonic absorption peak | redshifted main absorption peak | — | |||
| Binding Energy | exciton binding energy | -1.9eV | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — |
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | bright exciton | bright excitonic peak | — | |||
| Absorption Peak | main excitonic absorption peak | redshifted main absorption peak | — | |||
| Binding Energy | exciton binding energy | -1.9eV | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — |
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | bright exciton | bright excitonic peak | — | |||
| Absorption Peak | main excitonic absorption peak | redshifted main absorption peak | — | |||
| Binding Energy | exciton binding energy | -1.9eV | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — |
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | bright exciton | bright excitonic peak | — | |||
| Absorption Peak | main excitonic absorption peak | redshifted main absorption peak | — | |||
| Binding Energy | exciton binding energy | -1.9eV | — | |||
| Pl Peak Fwhm | PL peak | 25meV | — | — | — |
Enhanced Emission from Boron-Vacancy Center in Rhombohedral Boron Nitride