Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Polarization Switching Threshold Field | no noticeable switching observed up to | 0.23V/nm | — | |||
| Ir Band Position | IR band | 861cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 890cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 899cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 920cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Ferroelectricity in twisted double bilayer graphene
Electroluminescence and energy transfer mediated by hyperbolic polaritons
Design and fabrication of guiding patterns for topography-based searching of 2D devices for scanning tunneling microscopy measurements
Mechanically-reconfigurable van der Waals devices via low-friction gold sliding
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Single-photon detection enabled by negative differential conductivity in moiré superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics
Arbitrarily structured quantum emission with a multifunctional metalens
Chiral-helical junctions in screened graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Polarization Switching Threshold Field | no noticeable switching observed up to | 0.23V/nm | — | |||
| Ir Band Position | IR band | 861cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 890cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 899cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 920cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Ferroelectricity in twisted double bilayer graphene
Electroluminescence and energy transfer mediated by hyperbolic polaritons
Design and fabrication of guiding patterns for topography-based searching of 2D devices for scanning tunneling microscopy measurements
Mechanically-reconfigurable van der Waals devices via low-friction gold sliding
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Single-photon detection enabled by negative differential conductivity in moiré superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics
Arbitrarily structured quantum emission with a multifunctional metalens
Chiral-helical junctions in screened graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Polarization Switching Threshold Field | no noticeable switching observed up to | 0.23V/nm | — | |||
| Ir Band Position | IR band | 861cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 890cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 899cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 920cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Ferroelectricity in twisted double bilayer graphene
Electroluminescence and energy transfer mediated by hyperbolic polaritons
Design and fabrication of guiding patterns for topography-based searching of 2D devices for scanning tunneling microscopy measurements
Mechanically-reconfigurable van der Waals devices via low-friction gold sliding
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Single-photon detection enabled by negative differential conductivity in moiré superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics
Arbitrarily structured quantum emission with a multifunctional metalens
Chiral-helical junctions in screened graphene
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations1 property1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Polarization Switching Threshold Field | no noticeable switching observed up to | 0.23V/nm | — | |||
| Ir Band Position | IR band | 861cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 890cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 899cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 920cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors
Ferroelectricity in twisted double bilayer graphene
Electroluminescence and energy transfer mediated by hyperbolic polaritons
Design and fabrication of guiding patterns for topography-based searching of 2D devices for scanning tunneling microscopy measurements
Mechanically-reconfigurable van der Waals devices via low-friction gold sliding
Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
Tunneling photo-thermoelectric effect in monolayer graphene/bilayer hexagonal boron nitride/bilayer graphene asymmetric van der Waals tunnel junctions
Single-photon detection enabled by negative differential conductivity in moiré superlattices
Ultra-sharp lateral p-n junctions in modulation-doped graphene
Single Crystalline 2D Material Nanoribbon Networks for Nanoelectronics
Arbitrarily structured quantum emission with a multifunctional metalens
Chiral-helical junctions in screened graphene