Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries | Matter42 Literature
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Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries
Dániel Datz, Gergely Németh, László Rátkai, Áron Pekker et al.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.
1 characterization2 properties2 figures
hBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricAuStudied MaterialPtStudied Material
Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.
1 characterization1 property1 figure
BNNTStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPtStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.
1 characterization2 properties2 figures
hBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricAuStudied MaterialPtStudied Material
Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.
1 characterization1 property1 figure
BNNTStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPtStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.
1 characterization2 properties2 figures
hBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricAuStudied MaterialPtStudied Material
Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.
1 characterization1 property1 figure
BNNTStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPtStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.
1 characterization2 properties2 figures
hBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricAuStudied MaterialPtStudied Material
Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.
1 characterization1 property1 figure
BNNTStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPtStudied Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.