Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Dániel Datz; Gergely Németh; László Rátkai; Áron Pekker; Katalin Kamarás

doi:10.1002/pssr.202300370

Paper details

Research paper

TheoreticalComputed Phonon

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Dániel Datz, Gergely Németh, László Rátkai, Áron Pekker et al.

2023·10.1002/pssr.202300370·arXiv:2309.12228

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

1 characterization2 properties2 figures

hBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricAuStudied MaterialPtStudied Material

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

1 characterization1 property1 figure

BNNTStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricPtStudied Material

Materials

hexagonal boron nitride

hBN

Studied Material

Also known as

hBNboron nitride

studied material

silicon dioxide

SiO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Calc. Raman	excitation	1540cm⁻¹	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	ripple wavelength	120-130nm	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	TO phonon polariton peak	1370cm⁻¹	BNNT	Simulated boron nitride nanotube represented as a hollow sph		—
Ir Band Position	IR band	1540cm⁻¹	—	—	—	—
Ir Band Position	IR band	1370cm⁻¹	—	—	—	—
Ir Band Position	IR band	1500cm⁻¹	—	—	—	—
Ir Band Position	IR band	1428cm⁻¹	—	—	—	—
Ir Band Position	IR band	1380cm⁻¹	—	—	—	—
Ir Band Position	IR band	1358cm⁻¹	—	—	—	—
Ir Band Shift	band shift	1358cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Calc. Raman	excitation	1540cm⁻¹	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	ripple wavelength	120-130nm	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	TO phonon polariton peak	1370cm⁻¹	BNNT	Simulated boron nitride nanotube represented as a hollow sph		—
Ir Band Position	IR band	1540cm⁻¹	—	—	—	—
Ir Band Position	IR band	1370cm⁻¹	—	—	—	—
Ir Band Position	IR band	1500cm⁻¹	—	—	—	—
Ir Band Position	IR band	1428cm⁻¹	—	—	—	—
Ir Band Position	IR band	1380cm⁻¹	—	—	—	—
Ir Band Position	IR band	1358cm⁻¹	—	—	—	—
Ir Band Shift	band shift	1358cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Calc. Raman	excitation	1540cm⁻¹	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	ripple wavelength	120-130nm	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	TO phonon polariton peak	1370cm⁻¹	BNNT	Simulated boron nitride nanotube represented as a hollow sph		—
Ir Band Position	IR band	1540cm⁻¹	—	—	—	—
Ir Band Position	IR band	1370cm⁻¹	—	—	—	—
Ir Band Position	IR band	1500cm⁻¹	—	—	—	—
Ir Band Position	IR band	1428cm⁻¹	—	—	—	—
Ir Band Position	IR band	1380cm⁻¹	—	—	—	—
Ir Band Position	IR band	1358cm⁻¹	—	—	—	—
Ir Band Shift	band shift	1358cm⁻¹	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Calc. Raman	excitation	1540cm⁻¹	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	ripple wavelength	120-130nm	hBN	Simulated s-SNOM geometry consisting of a 40 nm hBN layer on		—
Peak Feature Position	TO phonon polariton peak	1370cm⁻¹	BNNT	Simulated boron nitride nanotube represented as a hollow sph		—
Ir Band Position	IR band	1540cm⁻¹	—	—	—	—
Ir Band Position	IR band	1370cm⁻¹	—	—	—	—
Ir Band Position	IR band	1500cm⁻¹	—	—	—	—
Ir Band Position	IR band	1428cm⁻¹	—	—	—	—
Ir Band Position	IR band	1380cm⁻¹	—	—	—	—
Ir Band Position	IR band	1358cm⁻¹	—	—	—	—
Ir Band Shift	band shift	1358cm⁻¹	—	—	—	—

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Generalized Mie theory for full-wave numerical calculations of scattering near-field optical microscopy with arbitrary geometries

Samples

Simulated s-SNOM geometry consisting of a 40 nm hBN layer on 4 nm SiO₂ on semi-infinite Si, with a 3 nm radius gold sphere and a platinum spheroidal tip above the multilayer surface.

Simulated boron nitride nanotube represented as a hollow sphere with 3 nm outer radius and 2 nm inner radius on 4 nm SiO₂/Si substrate, probed by a platinum tip.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations