Patent
US 10,879,445OF THE INVENTION
Benjamín J. Alemán, Joshua E. Ziegler
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,879,445Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A quantum emitter device comprising: a substrate made of silicon dioxide; a layer of hexagonal boron nitride (hBN) on the substrate; and a hole milled in the layer of hBN.
The device of claim 1, wherein the hole milled in the layer of hBN has a side wall angle 1.1 0 ± 0.28 0 from the horizontal.
The device of claim 1, wherein the hole milled in the layer of hBN has an oval shape with minor axis 516 nm ± 20 nm, major axis 600 nm ± 20 nm.
The device of claim 1, wherein the hole milled in the layer of hBN has a depth 4 nm ± 1 nm.
The device of claim 1, wherein the hBN layer has a total thickness of 5- 10 nm.
The device of claim 1, comprising multiple holes milled in the layer of hBN.
The device of claim 1, comprising multiple holes milled in the layer of hBN with a density of 1 hole per 1 p m 2.
A method of fabricating solid-state quantum emitters in 2D hexagonal boron nitride comprising providing a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide, and fabricating holes in the layer of hBN.
The method of claim 8, wherein fabricating the holes uses a gallium focused ion beam with ion dose of 10 pC/p m 2, and beam energy of 20 keV.
The method of claim 8, wherein fabricating the holes uses a helium focused ion beam, preferably about 100 pC/p m 2 dose at an energy of 25 keV.
The method of claim 8, wherein fabricating the holes uses electron beam directed etching at 25 and 15 keV and at a dose of ~1 pC/p m 2, performed in H₂ 0 vapor.
The method of claim 8, wherein fabricating the holes uses photolithography and reactive ion etch (RIE) with sidewall tapering.
The method of claim 8, wherein fabricating the holes uses photolithography to define array of holes with ~ 500 nm diameter in photoresist, performing reactive ion etching with Ar or XeF 2 ions.
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials3 process steps
Few-layer CVD hBN (Graphene Supermarket) was transferred onto SiO₂ and FIB-milled to create holes forming edges at the hole perimeter. Two FIB conditions were studied: Region 1 (10 keV, 1 pC/μm²) and Region 2 (20 keV, 10 pC/μm²). Arrays of 500 nm diameter circular holes with 1 μm center-to-center separation were patterned. Hole depth was approximately 4 nm (~12 hBN atomic layers) for the 20 keV/10 pC/μm² condition. After milling, hBN flakes were annealed in oxygen at 850 °C to activate QEs and remove carbon contamination. Optical confocal microscopy and second-order photon correlation measurements confirmed arrays of bright, localized photoluminescence with single and multiple QEs. A 31% yield of single QEs was achieved.
Layer stacks claimed or described, ordered top of device to substrate.
quantum emitter device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole sidewall angle from horizontal | 1.1 degrees | hBN |
hole minor axis length |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,879,445Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A quantum emitter device comprising: a substrate made of silicon dioxide; a layer of hexagonal boron nitride (hBN) on the substrate; and a hole milled in the layer of hBN.
The device of claim 1, wherein the hole milled in the layer of hBN has a side wall angle 1.1 0 ± 0.28 0 from the horizontal.
The device of claim 1, wherein the hole milled in the layer of hBN has an oval shape with minor axis 516 nm ± 20 nm, major axis 600 nm ± 20 nm.
The device of claim 1, wherein the hole milled in the layer of hBN has a depth 4 nm ± 1 nm.
The device of claim 1, wherein the hBN layer has a total thickness of 5- 10 nm.
The device of claim 1, comprising multiple holes milled in the layer of hBN.
The device of claim 1, comprising multiple holes milled in the layer of hBN with a density of 1 hole per 1 p m 2.
A method of fabricating solid-state quantum emitters in 2D hexagonal boron nitride comprising providing a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide, and fabricating holes in the layer of hBN.
The method of claim 8, wherein fabricating the holes uses a gallium focused ion beam with ion dose of 10 pC/p m 2, and beam energy of 20 keV.
The method of claim 8, wherein fabricating the holes uses a helium focused ion beam, preferably about 100 pC/p m 2 dose at an energy of 25 keV.
The method of claim 8, wherein fabricating the holes uses electron beam directed etching at 25 and 15 keV and at a dose of ~1 pC/p m 2, performed in H₂ 0 vapor.
The method of claim 8, wherein fabricating the holes uses photolithography and reactive ion etch (RIE) with sidewall tapering.
The method of claim 8, wherein fabricating the holes uses photolithography to define array of holes with ~ 500 nm diameter in photoresist, performing reactive ion etching with Ar or XeF 2 ions.
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials3 process steps
Few-layer CVD hBN (Graphene Supermarket) was transferred onto SiO₂ and FIB-milled to create holes forming edges at the hole perimeter. Two FIB conditions were studied: Region 1 (10 keV, 1 pC/μm²) and Region 2 (20 keV, 10 pC/μm²). Arrays of 500 nm diameter circular holes with 1 μm center-to-center separation were patterned. Hole depth was approximately 4 nm (~12 hBN atomic layers) for the 20 keV/10 pC/μm² condition. After milling, hBN flakes were annealed in oxygen at 850 °C to activate QEs and remove carbon contamination. Optical confocal microscopy and second-order photon correlation measurements confirmed arrays of bright, localized photoluminescence with single and multiple QEs. A 31% yield of single QEs was achieved.
Layer stacks claimed or described, ordered top of device to substrate.
quantum emitter device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole sidewall angle from horizontal | 1.1 degrees | hBN |
hole minor axis length |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,879,445Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A quantum emitter device comprising: a substrate made of silicon dioxide; a layer of hexagonal boron nitride (hBN) on the substrate; and a hole milled in the layer of hBN.
The device of claim 1, wherein the hole milled in the layer of hBN has a side wall angle 1.1 0 ± 0.28 0 from the horizontal.
The device of claim 1, wherein the hole milled in the layer of hBN has an oval shape with minor axis 516 nm ± 20 nm, major axis 600 nm ± 20 nm.
The device of claim 1, wherein the hole milled in the layer of hBN has a depth 4 nm ± 1 nm.
The device of claim 1, wherein the hBN layer has a total thickness of 5- 10 nm.
The device of claim 1, comprising multiple holes milled in the layer of hBN.
The device of claim 1, comprising multiple holes milled in the layer of hBN with a density of 1 hole per 1 p m 2.
A method of fabricating solid-state quantum emitters in 2D hexagonal boron nitride comprising providing a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide, and fabricating holes in the layer of hBN.
The method of claim 8, wherein fabricating the holes uses a gallium focused ion beam with ion dose of 10 pC/p m 2, and beam energy of 20 keV.
The method of claim 8, wherein fabricating the holes uses a helium focused ion beam, preferably about 100 pC/p m 2 dose at an energy of 25 keV.
The method of claim 8, wherein fabricating the holes uses electron beam directed etching at 25 and 15 keV and at a dose of ~1 pC/p m 2, performed in H₂ 0 vapor.
The method of claim 8, wherein fabricating the holes uses photolithography and reactive ion etch (RIE) with sidewall tapering.
The method of claim 8, wherein fabricating the holes uses photolithography to define array of holes with ~ 500 nm diameter in photoresist, performing reactive ion etching with Ar or XeF 2 ions.
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials3 process steps
Few-layer CVD hBN (Graphene Supermarket) was transferred onto SiO₂ and FIB-milled to create holes forming edges at the hole perimeter. Two FIB conditions were studied: Region 1 (10 keV, 1 pC/μm²) and Region 2 (20 keV, 10 pC/μm²). Arrays of 500 nm diameter circular holes with 1 μm center-to-center separation were patterned. Hole depth was approximately 4 nm (~12 hBN atomic layers) for the 20 keV/10 pC/μm² condition. After milling, hBN flakes were annealed in oxygen at 850 °C to activate QEs and remove carbon contamination. Optical confocal microscopy and second-order photon correlation measurements confirmed arrays of bright, localized photoluminescence with single and multiple QEs. A 31% yield of single QEs was achieved.
Layer stacks claimed or described, ordered top of device to substrate.
quantum emitter device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole sidewall angle from horizontal | 1.1 degrees | hBN |
hole minor axis length |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,879,445Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A quantum emitter device comprising: a substrate made of silicon dioxide; a layer of hexagonal boron nitride (hBN) on the substrate; and a hole milled in the layer of hBN.
The device of claim 1, wherein the hole milled in the layer of hBN has a side wall angle 1.1 0 ± 0.28 0 from the horizontal.
The device of claim 1, wherein the hole milled in the layer of hBN has an oval shape with minor axis 516 nm ± 20 nm, major axis 600 nm ± 20 nm.
The device of claim 1, wherein the hole milled in the layer of hBN has a depth 4 nm ± 1 nm.
The device of claim 1, wherein the hBN layer has a total thickness of 5- 10 nm.
The device of claim 1, comprising multiple holes milled in the layer of hBN.
The device of claim 1, comprising multiple holes milled in the layer of hBN with a density of 1 hole per 1 p m 2.
A method of fabricating solid-state quantum emitters in 2D hexagonal boron nitride comprising providing a layer of hexagonal boron nitride (hBN) on a substrate made of silicon dioxide, and fabricating holes in the layer of hBN.
The method of claim 8, wherein fabricating the holes uses a gallium focused ion beam with ion dose of 10 pC/p m 2, and beam energy of 20 keV.
The method of claim 8, wherein fabricating the holes uses a helium focused ion beam, preferably about 100 pC/p m 2 dose at an energy of 25 keV.
The method of claim 8, wherein fabricating the holes uses electron beam directed etching at 25 and 15 keV and at a dose of ~1 pC/p m 2, performed in H₂ 0 vapor.
The method of claim 8, wherein fabricating the holes uses photolithography and reactive ion etch (RIE) with sidewall tapering.
The method of claim 8, wherein fabricating the holes uses photolithography to define array of holes with ~ 500 nm diameter in photoresist, performing reactive ion etching with Ar or XeF 2 ions.
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials3 process steps
Few-layer CVD hBN (Graphene Supermarket) was transferred onto SiO₂ and FIB-milled to create holes forming edges at the hole perimeter. Two FIB conditions were studied: Region 1 (10 keV, 1 pC/μm²) and Region 2 (20 keV, 10 pC/μm²). Arrays of 500 nm diameter circular holes with 1 μm center-to-center separation were patterned. Hole depth was approximately 4 nm (~12 hBN atomic layers) for the 20 keV/10 pC/μm² condition. After milling, hBN flakes were annealed in oxygen at 850 °C to activate QEs and remove carbon contamination. Optical confocal microscopy and second-order photon correlation measurements confirmed arrays of bright, localized photoluminescence with single and multiple QEs. A 31% yield of single QEs was achieved.
Layer stacks claimed or described, ordered top of device to substrate.
quantum emitter device
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole sidewall angle from horizontal | 1.1 degrees | hBN |
hole minor axis length |
Related documents with shared materials, methods, properties, or citations.
| 516 nm |
hBN |
hole major axis length | 600 nm | hBN |
hole depth | 4 nm | hBN |
hBN layer total thickness | 5–10 nm | hBN |
single QE yield from FIB-milled holes | 31 % | hBN |
hole depth measured by AFM for 20 keV/10 pC/μm² FIB condition | 4 nm | hBN |
Thickness | 532–750 nm | — |
| 516 nm |
hBN |
hole major axis length | 600 nm | hBN |
hole depth | 4 nm | hBN |
hBN layer total thickness | 5–10 nm | hBN |
single QE yield from FIB-milled holes | 31 % | hBN |
hole depth measured by AFM for 20 keV/10 pC/μm² FIB condition | 4 nm | hBN |
Thickness | 532–750 nm | — |
| 516 nm |
hBN |
hole major axis length | 600 nm | hBN |
hole depth | 4 nm | hBN |
hBN layer total thickness | 5–10 nm | hBN |
single QE yield from FIB-milled holes | 31 % | hBN |
hole depth measured by AFM for 20 keV/10 pC/μm² FIB condition | 4 nm | hBN |
Thickness | 532–750 nm | — |
| 516 nm |
hBN |
hole major axis length | 600 nm | hBN |
hole depth | 4 nm | hBN |
hBN layer total thickness | 5–10 nm | hBN |
single QE yield from FIB-milled holes | 31 % | hBN |
hole depth measured by AFM for 20 keV/10 pC/μm² FIB condition | 4 nm | hBN |
Thickness | 532–750 nm | — |