Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy

Paper details

Research paper

Experimental Characterization

Niclas S. Mueller, Alexander P. Fellows, Ben John, Andrew E. Naclerio et al.

2025·10.1002/adma.202510124·arXiv:2504.15939

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

3 characterizations7 properties2 figures

ExperimentalhBNStudied MaterialSiO₂Substrate / Dielectric

1 characterization2 properties1 figure

ReferenceSiO₂Reference Material

hexagonal boron nitride

hBN

Studied Material

Also known as

hBN

studied material

fused silica

SiO₂

Substrate / Dielectric

Also known as

Related documents with shared materials, methods, properties, or citations.

Full Crystallographic Imaging of Hexagonal Boron Nitride Monolayers with Phonon-Enhanced Sum-Frequency Microscopy | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Substrate Thickness	monolayer thickness	3.3angstrom	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Ir Band Position	E' transverse optical phonon	1368cm⁻¹	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Enhancement Factor	SFG intensity enhancement	800	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Ratio	integrated SFG response ratio	10	hBN SiO₂	CVD-grown hBN monolayer flakes transferred to a fused silica z-cut alpha quartz reference substrate used for phase and am	—
Coherence Length	effective SFG probing depth	36nm	SiO₂	z-cut alpha quartz reference substrate used for phase and am	—
Sample Area	imaged area	100x100um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Sample Area	field of view	200x150um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Edge Termination	domain edge termination	nitrogen-terminated zigzag	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	monolayer thickness	3.3angstrom	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Ir Band Position	E' transverse optical phonon	1368cm⁻¹	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Enhancement Factor	SFG intensity enhancement	800	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Ratio	integrated SFG response ratio	10	hBN SiO₂	CVD-grown hBN monolayer flakes transferred to a fused silica z-cut alpha quartz reference substrate used for phase and am	—
Coherence Length	effective SFG probing depth	36nm	SiO₂	z-cut alpha quartz reference substrate used for phase and am	—
Sample Area	imaged area	100x100um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Sample Area	field of view	200x150um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Edge Termination	domain edge termination	nitrogen-terminated zigzag	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	monolayer thickness	3.3angstrom	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Ir Band Position	E' transverse optical phonon	1368cm⁻¹	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Enhancement Factor	SFG intensity enhancement	800	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Ratio	integrated SFG response ratio	10	hBN SiO₂	CVD-grown hBN monolayer flakes transferred to a fused silica z-cut alpha quartz reference substrate used for phase and am	—
Coherence Length	effective SFG probing depth	36nm	SiO₂	z-cut alpha quartz reference substrate used for phase and am	—
Sample Area	imaged area	100x100um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Sample Area	field of view	200x150um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Edge Termination	domain edge termination	nitrogen-terminated zigzag	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	monolayer thickness	3.3angstrom	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Ir Band Position	E' transverse optical phonon	1368cm⁻¹	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Enhancement Factor	SFG intensity enhancement	800	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Signal Ratio	integrated SFG response ratio	10	hBN SiO₂	CVD-grown hBN monolayer flakes transferred to a fused silica z-cut alpha quartz reference substrate used for phase and am	—
Coherence Length	effective SFG probing depth	36nm	SiO₂	z-cut alpha quartz reference substrate used for phase and am	—
Sample Area	imaged area	100x100um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Sample Area	field of view	200x150um²	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—
Edge Termination	domain edge termination	nitrogen-terminated zigzag	hBN	CVD-grown hBN monolayer flakes transferred to a fused silica	—