Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Monolayer MoS₂ electronic system treated with a k·p Hamiltonian including SOC and strain terms; used as the basis for nonlinear anomalous Hall response calculations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Monolayer MoS₂ electronic system treated with a k·p Hamiltonian including SOC and strain terms; used as the basis for nonlinear anomalous Hall response calculations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Monolayer MoS₂ electronic system treated with a k·p Hamiltonian including SOC and strain terms; used as the basis for nonlinear anomalous Hall response calculations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Monolayer MoS₂ electronic system treated with a k·p Hamiltonian including SOC and strain terms; used as the basis for nonlinear anomalous Hall response calculations.
Analytical/k·p model with spin-orbit coupling and strain-induced Hamiltonian term; relaxation-time approximation used to derive nonlinear conductivities and Berry-curvature-dipole response.
Settings
modelk·p Hamiltonian
ac fieldapplied
symmetryC3v broken by uniaxial strain
includes soctrue
includes straintrue
relaxation time approximationtrue
Conditions
figure source:Figure 2
parameters from paper:{"hopping_eV":1.137,"band_gap_eV":1.766,"fermi_energy_eV":0.81,"relaxation_time_ps":1,"lattice_constant_angstrom":3.16,"valence_soc_splitting_meV":0.73}
Analytical/k·p model with spin-orbit coupling and strain-induced Hamiltonian term; relaxation-time approximation used to derive nonlinear conductivities and Berry-curvature-dipole response.
Settings
modelk·p Hamiltonian
ac fieldapplied
symmetryC3v broken by uniaxial strain
includes soctrue
includes straintrue
relaxation time approximationtrue
Conditions
figure source:Figure 2
parameters from paper:{"hopping_eV":1.137,"band_gap_eV":1.766,"fermi_energy_eV":0.81,"relaxation_time_ps":1,"lattice_constant_angstrom":3.16,"valence_soc_splitting_meV":0.73}
Analytical/k·p model with spin-orbit coupling and strain-induced Hamiltonian term; relaxation-time approximation used to derive nonlinear conductivities and Berry-curvature-dipole response.
Settings
modelk·p Hamiltonian
ac fieldapplied
symmetryC3v broken by uniaxial strain
includes soctrue
includes straintrue
relaxation time approximationtrue
Conditions
figure source:Figure 2
parameters from paper:{"hopping_eV":1.137,"band_gap_eV":1.766,"fermi_energy_eV":0.81,"relaxation_time_ps":1,"lattice_constant_angstrom":3.16,"valence_soc_splitting_meV":0.73}
Analytical/k·p model with spin-orbit coupling and strain-induced Hamiltonian term; relaxation-time approximation used to derive nonlinear conductivities and Berry-curvature-dipole response.
Settings
modelk·p Hamiltonian
ac fieldapplied
symmetryC3v broken by uniaxial strain
includes soctrue
includes straintrue
relaxation time approximationtrue
Conditions
figure source:Figure 2
parameters from paper:{"hopping_eV":1.137,"band_gap_eV":1.766,"fermi_energy_eV":0.81,"relaxation_time_ps":1,"lattice_constant_angstrom":3.16,"valence_soc_splitting_meV":0.73}
