Research paperExperimental CharacterizationMeasurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré SuperlatticeXiong Huang, Dongxue Chen, Zhen Lian, Qiran Wu et al.2025·10.1021/acs.nanolett.5c00795·arXiv:2308.08134AbstractWe report direct measurements of thermodynamic gaps of correlated insulating states in a dual-gate WS₂/WSe₂ moiré bilayer using microwave impedance microscopy. By probing both the graphene top gate and the moiré bilayer, we extract the doping dependence of the bilayer chemical potential and determine energy gaps for several correlated insulating states. The Mott insulating gap at one hole per moiré unit cell is 65 meV, while the gaps at fractional fillings -1/3 and -2/3 are about 10 meV. The gaps show little dependence on external electric field over the accessible range.Read more
Dual-gate WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN, with monolayer graphene as the top gate and few-layer graphite as the back gate.1 characterization6 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationMeasurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré SuperlatticeXiong Huang, Dongxue Chen, Zhen Lian, Qiran Wu et al.2025·10.1021/acs.nanolett.5c00795·arXiv:2308.08134AbstractWe report direct measurements of thermodynamic gaps of correlated insulating states in a dual-gate WS₂/WSe₂ moiré bilayer using microwave impedance microscopy. By probing both the graphene top gate and the moiré bilayer, we extract the doping dependence of the bilayer chemical potential and determine energy gaps for several correlated insulating states. The Mott insulating gap at one hole per moiré unit cell is 65 meV, while the gaps at fractional fillings -1/3 and -2/3 are about 10 meV. The gaps show little dependence on external electric field over the accessible range.Read more
Dual-gate WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN, with monolayer graphene as the top gate and few-layer graphite as the back gate.1 characterization6 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationMeasurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré SuperlatticeXiong Huang, Dongxue Chen, Zhen Lian, Qiran Wu et al.2025·10.1021/acs.nanolett.5c00795·arXiv:2308.08134AbstractWe report direct measurements of thermodynamic gaps of correlated insulating states in a dual-gate WS₂/WSe₂ moiré bilayer using microwave impedance microscopy. By probing both the graphene top gate and the moiré bilayer, we extract the doping dependence of the bilayer chemical potential and determine energy gaps for several correlated insulating states. The Mott insulating gap at one hole per moiré unit cell is 65 meV, while the gaps at fractional fillings -1/3 and -2/3 are about 10 meV. The gaps show little dependence on external electric field over the accessible range.Read more
Dual-gate WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN, with monolayer graphene as the top gate and few-layer graphite as the back gate.1 characterization6 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactExpand
Research paperExperimental CharacterizationMeasurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré SuperlatticeXiong Huang, Dongxue Chen, Zhen Lian, Qiran Wu et al.2025·10.1021/acs.nanolett.5c00795·arXiv:2308.08134AbstractWe report direct measurements of thermodynamic gaps of correlated insulating states in a dual-gate WS₂/WSe₂ moiré bilayer using microwave impedance microscopy. By probing both the graphene top gate and the moiré bilayer, we extract the doping dependence of the bilayer chemical potential and determine energy gaps for several correlated insulating states. The Mott insulating gap at one hole per moiré unit cell is 65 meV, while the gaps at fractional fillings -1/3 and -2/3 are about 10 meV. The gaps show little dependence on external electric field over the accessible range.Read more
Dual-gate WS₂/WSe₂ moiré heterobilayer device encapsulated by hBN, with monolayer graphene as the top gate and few-layer graphite as the back gate.1 characterization6 properties2 figuresExperimentalWS₂Studied MaterialWSe₂Studied MaterialCCapping Or ContactBNSubstrate / DielectricCCapping Or ContactExpand
