Research paperExperimental CharacterizationUniversality in quantum critical flow of charge and heat in ultra-clean grapheneAniket Majumdar, Nisarg Chadha, Pritam Pal, Akash Gugnani et al.arXiv·2025·10.1038/s41567-025-02972-z·arXiv:2501.03193AbstractClose to the Dirac point, graphene is expected to exist in a quantum critical Dirac fluid state, where the flow of both charge and heat can be described with a dc electrical conductivity σQ, and thermodynamic variables such as entropy and enthalpy densities. The paper reports combined electrical and thermal transport in ultra-clean hBN-encapsulated graphene devices, finding inverse relations between σ and κe, a quantum critical conductivity σQ of about (4 ± 1) × e2/h, a giant violation of the Wiedemann-Franz law near charge neutrality, and thermal-regime viscosity approaching the holographic limit within a factor of four in the cleanest devices.Read more
Ultra-clean hBN-encapsulated monolayer graphene device D₂S₁ used for electrical and thermal transport measurements.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₄S₄ used for conductance scaling and hydrodynamic transport analysis.1 characterization3 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₁ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₄ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₅S₅ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationUniversality in quantum critical flow of charge and heat in ultra-clean grapheneAniket Majumdar, Nisarg Chadha, Pritam Pal, Akash Gugnani et al.arXiv·2025·10.1038/s41567-025-02972-z·arXiv:2501.03193AbstractClose to the Dirac point, graphene is expected to exist in a quantum critical Dirac fluid state, where the flow of both charge and heat can be described with a dc electrical conductivity σQ, and thermodynamic variables such as entropy and enthalpy densities. The paper reports combined electrical and thermal transport in ultra-clean hBN-encapsulated graphene devices, finding inverse relations between σ and κe, a quantum critical conductivity σQ of about (4 ± 1) × e2/h, a giant violation of the Wiedemann-Franz law near charge neutrality, and thermal-regime viscosity approaching the holographic limit within a factor of four in the cleanest devices.Read more
Ultra-clean hBN-encapsulated monolayer graphene device D₂S₁ used for electrical and thermal transport measurements.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₄S₄ used for conductance scaling and hydrodynamic transport analysis.1 characterization3 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₁ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₄ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₅S₅ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationUniversality in quantum critical flow of charge and heat in ultra-clean grapheneAniket Majumdar, Nisarg Chadha, Pritam Pal, Akash Gugnani et al.arXiv·2025·10.1038/s41567-025-02972-z·arXiv:2501.03193AbstractClose to the Dirac point, graphene is expected to exist in a quantum critical Dirac fluid state, where the flow of both charge and heat can be described with a dc electrical conductivity σQ, and thermodynamic variables such as entropy and enthalpy densities. The paper reports combined electrical and thermal transport in ultra-clean hBN-encapsulated graphene devices, finding inverse relations between σ and κe, a quantum critical conductivity σQ of about (4 ± 1) × e2/h, a giant violation of the Wiedemann-Franz law near charge neutrality, and thermal-regime viscosity approaching the holographic limit within a factor of four in the cleanest devices.Read more
Ultra-clean hBN-encapsulated monolayer graphene device D₂S₁ used for electrical and thermal transport measurements.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₄S₄ used for conductance scaling and hydrodynamic transport analysis.1 characterization3 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₁ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₄ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₅S₅ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationUniversality in quantum critical flow of charge and heat in ultra-clean grapheneAniket Majumdar, Nisarg Chadha, Pritam Pal, Akash Gugnani et al.arXiv·2025·10.1038/s41567-025-02972-z·arXiv:2501.03193AbstractClose to the Dirac point, graphene is expected to exist in a quantum critical Dirac fluid state, where the flow of both charge and heat can be described with a dc electrical conductivity σQ, and thermodynamic variables such as entropy and enthalpy densities. The paper reports combined electrical and thermal transport in ultra-clean hBN-encapsulated graphene devices, finding inverse relations between σ and κe, a quantum critical conductivity σQ of about (4 ± 1) × e2/h, a giant violation of the Wiedemann-Franz law near charge neutrality, and thermal-regime viscosity approaching the holographic limit within a factor of four in the cleanest devices.Read more
Ultra-clean hBN-encapsulated monolayer graphene device D₂S₁ used for electrical and thermal transport measurements.1 characterization6 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₄S₄ used for conductance scaling and hydrodynamic transport analysis.1 characterization3 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₁ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₁S₄ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Ultra-clean hBN-encapsulated monolayer graphene device D₅S₅ used in comparative transport measurements.1 characterization2 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
