Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | mobility | 140000cm²/Vs | — | |||
| Fet Carrier Concentration | impurity density | 22000000000cm⁻² | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Fet Carrier Concentration | carrier density at lowest resolved SdH oscillations | 39000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density corresponding to band-linear regime limit | 200000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point | 0V | — | |||
| Fet Mobility | Fermi velocity | 1290000cm²/Vs | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | mobility | 140000cm²/Vs | — | |||
| Fet Carrier Concentration | impurity density | 22000000000cm⁻² | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Fet Carrier Concentration | carrier density at lowest resolved SdH oscillations | 39000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density corresponding to band-linear regime limit | 200000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point | 0V | — | |||
| Fet Mobility | Fermi velocity | 1290000cm²/Vs | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | mobility | 140000cm²/Vs | — | |||
| Fet Carrier Concentration | impurity density | 22000000000cm⁻² | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Fet Carrier Concentration | carrier density at lowest resolved SdH oscillations | 39000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density corresponding to band-linear regime limit | 200000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point | 0V | — | |||
| Fet Mobility | Fermi velocity | 1290000cm²/Vs | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | mobility | 140000cm²/Vs | — | |||
| Fet Carrier Concentration | impurity density | 22000000000cm⁻² | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Raman Peak | spin splitting | 5meV | — | |||
| Fet Carrier Concentration | carrier density at lowest resolved SdH oscillations | 39000000000cm⁻² | — | |||
| Fet Carrier Concentration | carrier density corresponding to band-linear regime limit | 200000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point | 0V | — | |||
| Fet Mobility | Fermi velocity | 1290000cm²/Vs | — |
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