Charge detection using a WSe2 van der Waals heterostructure

Justin Boddison-Chouinard; Alex Bogan; Norman Fong; Pedro Barrios; Jean Lapointe; Kenji Watanabe; Takashi Taniguchi; Adina Luican-Mayer; Louis Gaudreau

doi:10.48550/arxiv.2203.11871

Paper details

Research paper

Experimental Characterization

Charge detection using a WSe₂ van der Waals heterostructure

Justin Boddison-Chouinard, Alex Bogan, Norman Fong, Pedro Barrios et al.

arXiv preprint·2022·10.48550/arxiv.2203.11871·arXiv:2203.11871

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

6 preparations5 characterizations5 properties3 figures

ExperimentalWSe₂Studied MaterialhBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricTiCapping Or ContactAuCapping Or ContactCrCapping Or ContactPtCapping Or ContactPdCapping Or Contact

Materials

WSe₂

Studied Material

Also known as

monolayer WSe₂

Variables

layer_count= 1

studied material

hexagonal boron nitride

hBN

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Charge detection using a WSe2 van der Waals heterostructure | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	source contact resistance	404ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Sheet Resistance	drain contact resistance	1240ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Threshold Voltage	activation threshold	-6V	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	first pinch-off slope	-1.7VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	charge transfer step slope	-0.34VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	source contact resistance	404ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Sheet Resistance	drain contact resistance	1240ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Threshold Voltage	activation threshold	-6V	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	first pinch-off slope	-1.7VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	charge transfer step slope	-0.34VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	source contact resistance	404ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Sheet Resistance	drain contact resistance	1240ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Threshold Voltage	activation threshold	-6V	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	first pinch-off slope	-1.7VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	charge transfer step slope	-0.34VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	source contact resistance	404ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Sheet Resistance	drain contact resistance	1240ohm/sq	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Fet Threshold Voltage	activation threshold	-6V	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	first pinch-off slope	-1.7VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—
Transport Slope	charge transfer step slope	-0.34VG₃U/VG₃L	WSe₂	Gated nano-constriction charge detector device based on a mo	—

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Charge detection using a WSe₂ van der Waals heterostructure

Samples

Gated nano-constriction charge detector device based on a monolayer WSe₂/hBN van der Waals heterostructure on p-Si/SiO2, with patterned local gates, contacts, and a top gate.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties