Research paper
Experimental CharacterizationEngineering superconducting contacts transparent to a bipolar graphene
Seong Jang, Geon-Hyoung Park, Sein Park, Hyeon-Woo Jeong et al.
2025
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations13 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ dielectric thickness | 300nm | — | |||
| Anneal Temperature | vacuum anneal temperature | 773K | — | |||
| Anneal Time | vacuum anneal duration | 120min | — | |||
| Etch Rate | hBN CF₄ plasma etch rate | —nm/s | — | |||
| Etch Rate | graphene O₂ plasma etch rate | 0.2layer/s | — | |||
| Dielectric Thickness | ALD Al₂O₃ thickness | 32nm | — | |||
| Contact Biased Temperature | normal-state conductance measurement temperature | 10.8K | — | |||
| Contact Biased Temperature | low-temperature differential-conductance measurement temperature | 0.02K | — | |||
| Carrier Concentration | channel charge concentration | -200000000000cm⁻² | — | |||
| Carrier Concentration | channel charge concentration | 200000000000cm⁻² | — | |||
| Backgate Voltage | optimal backgate voltage | 6.8V | — | |||
| Backgate Voltage | backgate voltage where p-doped contact becomes transparent | -25V | — | |||
| Normalized Conductance | G/G2.5mV | 1.6 | — | |||
| Conductance Enhancement | n-doped graphene conductance enhancement | 40% | — |
Related documents with shared materials, methods, properties, or citations.
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
High-harmonic generation enhancement with graphene heterostructures
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Toward single-photon detection with superconducting niobium diselenide nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations13 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ dielectric thickness | 300nm | — | |||
| Anneal Temperature | vacuum anneal temperature | 773K | — | |||
| Anneal Time | vacuum anneal duration | 120min | — | |||
| Etch Rate | hBN CF₄ plasma etch rate | —nm/s | — | |||
| Etch Rate | graphene O₂ plasma etch rate | 0.2layer/s | — | |||
| Dielectric Thickness | ALD Al₂O₃ thickness | 32nm | — | |||
| Contact Biased Temperature | normal-state conductance measurement temperature | 10.8K | — | |||
| Contact Biased Temperature | low-temperature differential-conductance measurement temperature | 0.02K | — | |||
| Carrier Concentration | channel charge concentration | -200000000000cm⁻² | — | |||
| Carrier Concentration | channel charge concentration | 200000000000cm⁻² | — | |||
| Backgate Voltage | optimal backgate voltage | 6.8V | — | |||
| Backgate Voltage | backgate voltage where p-doped contact becomes transparent | -25V | — | |||
| Normalized Conductance | G/G2.5mV | 1.6 | — | |||
| Conductance Enhancement | n-doped graphene conductance enhancement | 40% | — |
Related documents with shared materials, methods, properties, or citations.
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
High-harmonic generation enhancement with graphene heterostructures
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Toward single-photon detection with superconducting niobium diselenide nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations13 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ dielectric thickness | 300nm | — | |||
| Anneal Temperature | vacuum anneal temperature | 773K | — | |||
| Anneal Time | vacuum anneal duration | 120min | — | |||
| Etch Rate | hBN CF₄ plasma etch rate | —nm/s | — | |||
| Etch Rate | graphene O₂ plasma etch rate | 0.2layer/s | — | |||
| Dielectric Thickness | ALD Al₂O₃ thickness | 32nm | — | |||
| Contact Biased Temperature | normal-state conductance measurement temperature | 10.8K | — | |||
| Contact Biased Temperature | low-temperature differential-conductance measurement temperature | 0.02K | — | |||
| Carrier Concentration | channel charge concentration | -200000000000cm⁻² | — | |||
| Carrier Concentration | channel charge concentration | 200000000000cm⁻² | — | |||
| Backgate Voltage | optimal backgate voltage | 6.8V | — | |||
| Backgate Voltage | backgate voltage where p-doped contact becomes transparent | -25V | — | |||
| Normalized Conductance | G/G2.5mV | 1.6 | — | |||
| Conductance Enhancement | n-doped graphene conductance enhancement | 40% | — |
Related documents with shared materials, methods, properties, or citations.
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
High-harmonic generation enhancement with graphene heterostructures
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Toward single-photon detection with superconducting niobium diselenide nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations5 characterizations13 properties7 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ dielectric thickness | 300nm | — | |||
| Anneal Temperature | vacuum anneal temperature | 773K | — | |||
| Anneal Time | vacuum anneal duration | 120min | — | |||
| Etch Rate | hBN CF₄ plasma etch rate | —nm/s | — | |||
| Etch Rate | graphene O₂ plasma etch rate | 0.2layer/s | — | |||
| Dielectric Thickness | ALD Al₂O₃ thickness | 32nm | — | |||
| Contact Biased Temperature | normal-state conductance measurement temperature | 10.8K | — | |||
| Contact Biased Temperature | low-temperature differential-conductance measurement temperature | 0.02K | — | |||
| Carrier Concentration | channel charge concentration | -200000000000cm⁻² | — | |||
| Carrier Concentration | channel charge concentration | 200000000000cm⁻² | — | |||
| Backgate Voltage | optimal backgate voltage | 6.8V | — | |||
| Backgate Voltage | backgate voltage where p-doped contact becomes transparent | -25V | — | |||
| Normalized Conductance | G/G2.5mV | 1.6 | — | |||
| Conductance Enhancement | n-doped graphene conductance enhancement | 40% | — |
Related documents with shared materials, methods, properties, or citations.
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Edge dependence of the Josephson current in the quantum Hall regime
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tuning the pH Response of Monolayer Hexagonal Boron Nitride/Graphene Field-Effect Transistors
High-harmonic generation enhancement with graphene heterostructures
Extending Ambient Pressure X-ray Photoelectron Spectroscopy to Plasma Studies: A novel and flexible plasma gun approach
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Toward single-photon detection with superconducting niobium diselenide nanowires